GaAs Dual-gate FET frequency discriminator

Claim 2

A microwave frequency discriminator for input RF microwave frequency signals of substantially constant power level comprising: a transistor amplifier including a dual-gate field effect transistor having first and second control gate electrodes and input and output electrodes; means coupled to said first control gate electrode and said input and output electrodes for separately biasing said electrodes at predetermined bias voltages that produce in response to said input RF signal at said first control gate electrode an output RF signal at said output electrode having a predetermined frequency versus gain roll-off characteristic over a predetermined frequency band; means coupled to said second control gate electrode for biasing said second control gate electrode at a predetermined bias voltage in relation to the biasing of said first control gate electrode and said input and output electrodes that produces said output RF signal with a more linear frequency versus gain roll-off characteristic over said predetermined frequency band; said first-mentioned biasing means including means coupled to said first control gate electrode for controlling the input impedance of said transistor and means coupled to said output electrode for controlling the output impedance of said transistor, said second-mentioned biasing means including means coupled to said second control gate electrode for further controlling the output impedance of said transistor; detector means responsive to said output RF signal for producing a dc signal proportional to the amplitude of said output RF signal; and detector biasing means coupled to said detector means responsive to a predetermined bias voltage for controlling the input impedance of said detector means so as to provide matching with the output impedance of said transistor; whereby at said conditions of matched impedances said dc signal varies substantially linearly as a function of the frequency of said input RF signal.

Claim 3

A microwave frequency discriminator according to claim 1, wherein said detector means comprises a square law detector.

Claim 4

A microwave frequency discriminator according to claim 1, wherein said predetermined bias voltages for said first and second control gate electrodes are variable, the slope of said substantially linear dc signal versus frequency response being adjustable with changes in said variable bias voltages.

Claim 5

A microwave frequency discriminator according to claim 1, wherein said detector biasing means comprises means for providing forward biasing current through said detector means to provide said impedance matching conditions.

Claim 6

A microwave frequency discriminator according to claim 1, including means for blocking the bias voltage at said output electrode from the bias voltage at said detector means.

Claim 7

A microwave frequency discriminator comprising: signal limiting means responsive to an input RF signal of varying power level for generating an RF signal of substantially constant power level; a transistor amplifier including a dual-gate field effect transistor having first and second control gate electrodes and input and output electrodes; means coupled to said limiting means for applying said RF signal of substantially constant power level to said first control gate electrode, means coupled to said first control gate electrode and said input and output electrodes for separately biasing these electrodes at predetermined bias voltages that produce in response to said RF signal of substantially constant power level at said first control gate electrode an output RF signal at said output electrode having a predetermined frequency versus gain roll-off characteristic over a predetermined frequency band; means coupled to said second control gate electrode for biasing said second control gate electrode at a predetermined bias voltage in relation to the biasing of said first control gate electrode and said output electrode that produces said output RF signal with a more linear frequency versus gain roll-off characteristic over said predetermined frequency band; said first-mentioned biasing means including means coupled to said first control gate electrode for controlling the input impedance of said transistor and means coupled to said output electrode for controlling the output impedance of said transistor, said second-mentioned biasing means including means coupled to said second control gate electrode for further controlling the ouput impedance of said transistor; detector means responsive to said output RF signal for producing a dc signal proportional to the amplitude of said output RF signal; and detector biasing means coupled to said detector means responsive to a predetermined bias voltage for controlling the input impedance of said detector means so as to provide matching with the output impedance of said transistor, whereby at said conditions of matched impedances said dc signal varies substantially linearly as a function of the frequency of said input RF signal.

Claim 8

A microwave frequency discriminator comprising: signal limiting means responsive to an input RF signal of varying power level for generating an RF signal of substantially constant power level; a transistor amplifier including a dual-gate field effect transistor having first and second control gate electrodes and input and output electrodes; means coupled to said limiting means for applying said RF signal of substantially constant power level to said first control gate electrode, means coupled to said first control gate electrode and said input and output electrodes for separately biasing these electrodes at predetermined bias voltages that produce in response to said RF signal of substantially constant power level at said first control gate electrode an output RF signal at said output electrode having a predetermined frequency versus gain roll-off characteristic over a predetermined frequency band; means coupled to said second control gate electrode for biasing said second control gate electrode at a predetermined bias voltage in relation to the biasing of said first control gate electrode and said output electrode that produces said output RF signal with a more linear frequency versus gain roll-off characteristic over said predetermined frequency band; said first-mentioned biasing means including means coupled to said first control gate electrode for controlling the input impedance of said transistor and means coupled to said output electrode for controlling the output impedance of said transistor, said second-mentioned biasing means including means coupled to said second control gate electrode for further controlling the ouput impedance of said transistor; detector means responsive to said output RF signal for producing a dc signal proportional to the amplitude of said output RF signal; and detector biasing means coupled to said detector means responsive to a predetermined bias voltage for controlling the input impedance of said detector means so as to provide matching with the output impedance of said transistor, whereby at said conditions of matched impedances said dc signal varies substantially linearly as a function of the frequency of said input RF signal.

Claim 9

A microwave frequency discriminator according to claim 6, wherein said detector means comprises a square law detector.

Claim 10

A microwave frequency discriminator according to claim 6, wherein said predetermined bias voltages for said first and second control gate electrodes are variable, the slope of said substantially linear dc signal versus frequency response being adjustable with changes in said variable bias voltages.

Claim 11

A microwave frequency discriminator according to claim 6, wherein said detector biasing means includes means for biasing the forward current through said detector means to provide said impedance matching conditions.

Claim 12

A microwave frequency discriminator according to claim 6, including means for blocking the bias voltage at said output electrode from the bias voltage at said detector means.