Electronically tunable microwave frequency FET discriminator

Claim 2

A microwave frequency discriminator comprising: a transistor amplifier including a field effect transistor having first, second and third electrodes, said transistor amplifier having an output port, and an input port for receiving an input RF signal of substantially constant power level, said transistor being biased an amount for generating in response to said input RF signal an output RF signal having a predetermined frequency vs. gain roll-off characteristic within a predetermined frequency bandwidth; electronically variable capacitive means connected to said input port for providing a predetermined impedance condition at said transistor input port to augment said transistor frequency vs. gain roll-off characteristic; detector means responsive to said output RF signal for generating a dc signal; and biasing means responsive to a predetermined bias voltage for matching the output impedance of said transistor with the input impedance of said detector means, whereby at said conditions of matched impedances the voltage of said dc signal varies substantially linearly as a function of the frequency of said input RF signal.

Claim 3

A microwave frequency discriminator according to claim 1, wherein said detector means comprises a square law detector.

Claim 4

A microwave frequency discriminator according to claim 1, wherein said predetermined bias voltage is variable, the slope of said substantially linear dc voltage-frequency response being adjustable with changes in said variable voltage.

Claim 5

A microwave frequency discriminator according to claim 1, wherein said biasing means comprises a detector biasing circuit electrically connected to said detector means for biasing the forward current through said detector means to provide said impedance matching conditions.

Claim 6

A microwave frequency discriminator according to claim 1, wherein said first, second and third transistor electrodes are arranged as gate, source and drain electrodes respectively, and wherein said biasing means comprises a drain biasing circuit electrically connected to said drain electrode for biasing the drain voltage of said field effect transistor to provide said impedance matching conditions.

Claim 7

A microwave frequency discriminator according to claim 5, wherein said biasing means further comprises a detector biasing circuit electrically connected to said detector means and means for blocking the bias voltage of said drain biasing circuit from the bias voltage of said detector biasing circuit, said detector biasing circuit combining with said drain biasing circuit to provide said impedance matching conditions.

Claim 8

A microwave frequency discriminator according to claim 1, wherein said electronically variable capacitive means comprises a varactor diode responsive to a predetermined bias signal.

Claim 9

A microwave frequency discriminator comprising: signal limiting means responsive to an input RF signal of varying power level for generating an RF signal of substantially constant power level; a transistor amplifier including a field effect transistor having first, second and third electrodes, said transistor amplifier having an output port, and an input port for receiving said RF signal of substantially constant power level, said transistor being biased an amount for generating in response to said RF signal of substantially constant power level an output RF signal having a predetermined frequency vs. gain roll-off characteristic within a predetermined frequency bandwidth; electronically variable capacitive means connected to said limiting means and to said input port for providing a predetermined impedance condition at said transistor input port to augment said transistor frequency vs. gain roll-off characteristic; detector means responsive to said output RF signal for generating a dc signal; and biasing means responsive to a predetermined bias voltage for matching the output impedance of said transistor with the input impedance of said detector means, whereby at said conditions of matched impedances the voltage of said dc signal varies substantially linearly as a function of the frequency of said input RF signal.

Claim 10

A microwave frequency discriminator comprising: signal limiting means responsive to an input RF signal of varying power level for generating an RF signal of substantially constant power level; a transistor amplifier including a field effect transistor having first, second and third electrodes, said transistor amplifier having an output port, and an input port for receiving said RF signal of substantially constant power level, said transistor being biased an amount for generating in response to said RF signal of substantially constant power level an output RF signal having a predetermined frequency vs. gain roll-off characteristic within a predetermined frequency bandwidth; electronically variable capacitive means connected to said limiting means and to said input port for providing a predetermined impedance condition at said transistor input port to augment said transistor frequency vs. gain roll-off characteristic; detector means responsive to said output RF signal for generating a dc signal; and biasing means responsive to a predetermined bias voltage for matching the output impedance of said transistor with the input impedance of said detector means, whereby at said conditions of matched impedances the voltage of said dc signal varies substantially linearly as a function of the frequency of said input RF signal.

Claim 11

A microwave frequency discriminator according to claim 8, wherein said detector means comprises a square law detector.

Claim 12

A microwave frequency discriminator according to claim 8, wherein said predetermined bias voltage is variable, the slope of said substantially linear dc voltage-frequency response being adjustable with changes in said variable voltage.

Claim 13

A microwave frequency discriminator according to claim 8, wherein said biasing means comprises a detector biasing circuit electrically connected to said detector means for biasing the forward current through said detector means to provide said impedance matching conditions.

Claim 14

A microwave frequency discriminator according to claim 8, wherein said first, second and third transistor electrodes are arranged as gate, source and drain electrodes, respectively, and wherein said biasing means comprises a drain biasing circuit electrically connected to said drain electrode for biasing the drain voltage of said field effect transistor to provide said impedance matching conditions.

Claim 15

A microwave frequency discriminator according to claim 12, wherein said biasing means further comprises a detector biasing circuit electrically connected to said detector means for biasing the forward current through said detector means and means for blocking the bias voltage of said drain biasing circuit from the bias voltage of said detector biasing circuit, said detector biasing circuit combining with said drain biasing circuit to provide said impedance matching conditions.

Claim 16

A microwave frequency discriminator according to claim 8, wherein said electronically variable capacitive means comprises a varactor diode responsive to a predetermined bias signal.