Method of growing quartz

Claim 2

Method of growing quartz from a quartz seed, said method including the steps of (a) heating the quartz seed to between about 350 degrees C. and about 570 degrees C. while applying an electric field whose component, along the Z axis of the quartz seed has a strength of about 0.5 kV/cm to about 6 kV/cm, and maintaining the quartz under those conditions at least until the current passing through the quartz has decreased to a substantially constant value as a function of time; (b) removing the impurities which had diffused to the cathode surface of the seed; and (c) placing the quartz seed in an autoclave and hydrothermally growing the quartz.

Claim 3

Method according to claim 1 wherein the electric field is maintained while the seed is cooled to room temperature.

Claim 4

Method according to claim 1 wherein the electric field is applied via electrodes which are comprised of a material that does not diffuse substantially into quartz.

Claim 5

Method according to claim 3 wherein the material is selected from the group consisting of the platinum series and gold.

Claim 6

Method according to claim 4 wherein the material is platinum.

Claim 7

Method according to claim 4 wherein the material is gold.

Claim 8

Method according to claim 1 where in step b, a minimum of 0.2 millimeter is removed from the cathode surface of the seed.

Claim 9

Method according to claim 1 wherein between steps b and c, the seed is etched in a fluoride type etchant until all evidence of surface damage is removed.

Claim 10

Method according to claim 8 wherein the fluoride type etchant is an aqueous solution of ammonium bifluoride.

Claim 11

Method according to claim 8 wherein the fluoride type etchant is an aqueous solution of hydrogen fluoride.

Claim 12

Method according to claim 8 wherein the fluoride type etchant is an aqueous solution of ammonium fluoride and hydrogen fluoride.

Claim 13

Method according to claim 8 wherein the fluoride type etchant is a chemical polish for the major faces of the seed.

Claim 14

Method according to claim 1 where the hydrothermal growth is conducted using quartz nutrient which is swept and then deep etched in a fluoride type etchant prior to being placed in the autoclave.

Claim 15

Method according to claim 1 where the hydrothermal growth is conducted using quartz nutrient which is deep etched in a fluoride type etchant prior to being placed in the autoclave.

Claim 16

Method according to claim 1 wherein step a is conducted in an atmosphere which is substantially free of hydrogen.

Claim 17

Method according to claim 1 wherein step a is conducted in a vacuum.

Claim 18

Method according to claim 1 wherein step a is conducted in an inert gas atmosphere.

Claim 19

Method according to claim 1 wherein steps a and b are repeated prior to step c.

Claim 20

Method of growing quartz from a quartz seed and quartz nutrient consisting of (a) placing platinum electrodes in contact with the quartz seed, (b) heating the quartz seed to about 500 degrees C. while applying an electric field along the Z axis of the quartz seed of a strength of about 2 kV/cm for about 72 hours, (c) maintaining the electric field while the seed is cooled to room temperature, (d) removing the electrodes from the quartz seed by lapping with an aluminum oxide abrasive until a minimum of 0.2 millimeter is removed from the cathode surface of the seed, (e) etching the seed in an aqueous solution of ammonium fluoride and hydrogen fluoride until all evidence of damage produced by the lapping is removed, (f) deep etching the quartz nutrient in an aqueous solution of ammonium fluoride and hydrogen fluoride; and (g) placing the swept quartz seed and deeply etched quartz nutrient into an autoclave and hydrothermally growing the quartz.

Claim 21

Method of growing quartz from a quartz seed and quartz nutrient consisting of (a) placing platinum electrodes in contact with the quartz seed, (b) heating the quartz seed to about 500 degrees C. while applying an electric field along the Z axis of the quartz seed of a strength of about 2 kV/cm for about 72 hours, (c) maintaining the electric field while the seed is cooled to room temperature, (d) removing the electrodes from the quartz seed by lapping with an aluminum oxide abrasive until a minimum of 0.2 millimeter is removed from the cathode surface of the seed, (e) etching the seed in an aqueous solution of ammonium fluoride and hydrogen fluoride until all evidence of damage produced by the lapping is removed, (f) deep etching the quartz nutrient in an aqueous solution of ammonium fluoride and hydrogen fluoride; and (g) placing the swept quartz seed and deeply etched quartz nutrient into an autoclave and hydrothermally growing the quartz.

Claim 22

Method of growing quartz from a quartz seed consisting of (a) placing gold electrodes in contact with the quartz seed, (b) heating the quartz seed to about 500 degrees C. while applying an electric field along the Z axis of the quartz seed of a strength of about 2 kV/cm for about 72 hours, (c) maintaining the electric field while the seed is cooled to room temperature, (d) removing the electrodes from the quartz seed by lapping with an aluminum oxide abrasive until a minimum of 0.2 millimeter is removed from the cathode surface of the seed, (e) etching the seed in an aqueous solution of ammonium bifluoride until all evidence of damage produced by lapping is removed, and (f) placing the quartz seed in a noble metal lined autoclave and hydrothermally growing the quartz.

Claim 23

Method of growing quartz from a quartz seed consisting of (a) placing gold electrodes in contact with the quartz seed, (b) heating the quartz seed to about 500 degrees C. while applying an electric field along the Z axis of the quartz seed of a strength of about 2 kV/cm for about 72 hours, (c) maintaining the electric field while the seed is cooled to room temperature, (d) removing the electrodes from the quartz seed by lapping with an aluminum oxide abrasive until a minimum of 0.2 millimeter is removed from the cathode surface of the seed, (e) etching the seed in an aqueous solution of ammonium bifluoride until all evidence of damage produced by lapping is removed, and (f) placing the quartz seed in a noble metal lined autoclave and hydrothermally growing the quartz.