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Patent US4241314A successfully refreshed from Google Patents.
US4241314A
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Transistor amplifier circuits
Assignee: Nippon Gakki Co Ltd
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Filing: 1978-11-15
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Granted: 1980-12-23
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Expires: 1998-11-15
Abstract
Abstract In a transistor amplifier circuit of the type wherein two pairs of circuits are used each including a source follower type field effect transistor in the input stage and a bipolar type transistor in the succeeding stage and wherein the paired bipolar transistors constitute a differential amplifier, a plurality of constant current sources are connected such that the sum of the currents flowing through respective transistors will be constant for the purpose of driving the field effect transistors with small voltage in an active region.
Inventors
- 👤 Masayuki Iwamatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:37
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/45; H03F3/45071; H03F3/45076; H03F3/4508; H03F3/45085; H03F2203/00; H03F2203/45; H03F2203/45498; H03F2203/45612; H03F2203/45702
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
210 words
In a transistor amplifier circuit comprising a pair of field effect transistors in an input stage having gate electrodes respectively connected to input terminals, and a differential amplifier in a succeeding stage including a pair of bipolar transistors each having a base electrode respectively connected to a first current electrode of an associated one of the field effect transistors and a collector electrode respectively connected to an associated output terminal, the improvement which comprises a first constant current source having one terminal connected to second current electrodes of said field effect transistors, and the other terminal connected to a first power source; second and third constant current sources each having a first terminal connected to said first current electrode of an associated one of said field effect transistors, and a second terminal connected to a second power source; first and second resistors each having a first terminal connected to the collector electrode of an associated one of said bipolar transistors and a second terminal connected to said second source; a third resistor having a first terminal commonly connected to the emitter electrodes of said bipolar transistors and a second terminal connected to the junction between the second current electrodes of said field effect transistors and said first constant current source.
Claim 2
Dependent Claim
210 words
In a transistor amplifier circuit comprising a pair of field effect transistors in an input stage having gate electrodes respectively connected to input terminals, and a differential amplifier in a succeeding stage including a pair of bipolar transistors each having a base electrode respectively connected to a first current electrode of an associated one of the field effect transistors and a collector electrode respectively connected to an associated output terminal, the improvement which comprises a first constant current source having one terminal connected to second current electrodes of said field effect transistors, and the other terminal connected to a first power source; second and third constant current sources each having a first terminal connected to said first current electrode of an associated one of said field effect transistors, and a second terminal connected to a second power source; first and second resistors each having a first terminal connected to the collector electrode of an associated one of said bipolar transistors and a second terminal connected to said second source; a third resistor having a first terminal commonly connected to the emitter electrodes of said bipolar transistors and a second terminal connected to the junction between the second current electrodes of said field effect transistors and said first constant current source.
Claim 3
Dependent Claim
27 words
A transistor amplifier circuit according to claim 1 in which the field effect transistors are of N channel type and the bipolar transistors are of PNP type.
References Cited (Backward Citations)
US3959733A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-23 | 1984-06-23 | 1984-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-23 | 1988-06-23 | 1988-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-23 | 1992-06-23 | 1992-12-23 | $7700.00 | Window Closed / Lapsed |