US4241167A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrolytic blocking contact to InP
Assignee: United States Department of the Navy
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Filing: 1979-05-25
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Granted: 1980-12-23
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Expires: 1999-05-25
Abstract
Abstract A liquid barrier contact to InP made of 40% tartatic acid and 30% hydrogen peroxide in a 3:1 ratio by volume is used for capacitance-voltage carrier profiling to large voltages (>10 V) on relatively heavily doped material (>10 17 CM -3 ) and at room temperature.
Inventors
- 👤 David A. Collins
- 👤 Derek L. Lile
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:13
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2632; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/64; Y; Y10; Y10S; Y10S204/00; Y10S204/06
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
35 words
A liquid barrier contact on InP comprising: approximately 40% aqueous solution of tartaric acid; approximately 30% aqueous peroxide; said tartaric acid and said hydrogen peroxide being combined in an approximate 3:1 ratio, respectively, by volume.
Claim 2
Dependent Claim
35 words
A liquid barrier contact on InP comprising: approximately 40% aqueous solution of tartaric acid; approximately 30% aqueous peroxide; said tartaric acid and said hydrogen peroxide being combined in an approximate 3:1 ratio, respectively, by volume.
Claim 3
Dependent Claim
25 words
A liquid barrier contact on InP comprising: 40% aqueous solution of tartaric acid and 30% aqueous hydrogen peroxide mixed in a 3:1, respectively, by volume.
Claim 4
Dependent Claim
25 words
A liquid barrier contact on InP comprising: 40% aqueous solution of tartaric acid and 30% aqueous hydrogen peroxide mixed in a 3:1, respectively, by volume.
Claim 5
Dependent Claim
106 words
In a method of measuring the carrier concentration profile of a semiconducting InP speciman wherein the profile is obtained from measurements of electronic parameters of capacitance and voltage taken across a Schottky diode formed by depositing a rectifying contact upon the semiconducting InP specimen, the improvement comprising the steps of: coating the InP specimen with photoresist; forming an aperture in the photoresist to expose an area of InP; slightly etching said exposed area; depositing a liquid on said exposed area comprising approximately 40% aqueous solution of tartaric acid mixed with an approximately 30% aqueous solution of hydrogen peroxide in an approximate 3:1 ratio, respectively, by volume.
Claim 6
Dependent Claim
106 words
In a method of measuring the carrier concentration profile of a semiconducting InP speciman wherein the profile is obtained from measurements of electronic parameters of capacitance and voltage taken across a Schottky diode formed by depositing a rectifying contact upon the semiconducting InP specimen, the improvement comprising the steps of: coating the InP specimen with photoresist; forming an aperture in the photoresist to expose an area of InP; slightly etching said exposed area; depositing a liquid on said exposed area comprising approximately 40% aqueous solution of tartaric acid mixed with an approximately 30% aqueous solution of hydrogen peroxide in an approximate 3:1 ratio, respectively, by volume.
Claim 7
Dependent Claim
102 words
In a method of measuring the carrier concentration profile of a semiconducting InP specimen wherein the profile is obtained from measurements of electronic parameters of capacitance and voltage taken across a Schottky diode formed by depositing a rectifying contact upon the semiconducting InP specimen, the improvement comprising the steps of: coating the InP specimen with photoresist; forming an aperture in the photoresist to expose an area of InP; slightly etching said exposed area; depositing a liquid on said exposed area comprising 40% aqueous solution of tartaric acid mixed with 30% aqueous solution of hydrogen peroxide in a 3:1 ratio, respectively, by volume.
Claim 8
Dependent Claim
102 words
In a method of measuring the carrier concentration profile of a semiconducting InP specimen wherein the profile is obtained from measurements of electronic parameters of capacitance and voltage taken across a Schottky diode formed by depositing a rectifying contact upon the semiconducting InP specimen, the improvement comprising the steps of: coating the InP specimen with photoresist; forming an aperture in the photoresist to expose an area of InP; slightly etching said exposed area; depositing a liquid on said exposed area comprising 40% aqueous solution of tartaric acid mixed with 30% aqueous solution of hydrogen peroxide in a 3:1 ratio, respectively, by volume.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-23 | 1984-06-23 | 1984-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-23 | 1988-06-23 | 1988-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-23 | 1992-06-23 | 1992-12-23 | $7700.00 | Window Closed / Lapsed |