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US4241135A Expired / Lapsed US ⏱️ 0.0 years remaining

Polycrystalline diamond body/silicon carbide substrate composite

Assignee: General Electric Co
•
Filing: 1979-02-09
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Granted: 1980-12-23
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Expires: 1999-02-09
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Abstract

Abstract A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.

Inventors

  • 👤 Minyoung Lee
  • 👤 Lawrence E. Szala
  • 👤 Robert C. DeVries

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 21:35
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/622; C04B35/64; C04B35/645; B; B01; B01J; B01J3/00; B01J3/06; B01J3/062; B22; B22F; B22F7/00; B22F7/06; B24; B24D; B24D18/00; B24D18/0009; B32; B32B; B32B18/00; C04B35/515; C04B35/52; C04B35/56; C04B35/565; C04B35/575; C04B35/626; C04B35/63; C04B35/6303; C04B35/6316; C04B35/6455; C04B37/00; C04B37/001; B01J2203/00; B01J2203/06; B01J2203/0605; B01J2203/062; B01J2203/063; B01J2203/0635; B01J2203/065; B01J2203/0655; B01J2203/0675; B01J2203/0685; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/38; C04B2235/3817; C04B2235/3821; C04B2235/3826; C04B2235/383; C04B2235/3834; C04B2235/3839; C04B2235/3843; C04B2235/3847; C04B2235/3891; C04B2235/40; C04B2235/404; C04B2235/405; C04B2235/408; C04B2235/42; C04B2235/421; C04B2235/422; C04B2235/428; C04B2235/50; C04B2235/54; C04B2235/5418; C04B2235/5436; C04B2235/5463; C04B2235/5472; C04B2235/60; C04B2235/616; C04B2235/65; C04B2235/658; C04B2235/6581; C04B2235/6582; C04B2235/6587; C04B2235/70; C04B2235/72; C04B2235/721; C04B2235/728; C04B2235/74; C04B2235/77; C04B2235/80; C04B2235/96; C04B2235/9607; C04B2237/00; C04B2237/30; C04B2237/32; C04B2237/36; C04B2237/361; C04B2237/363; C04B2237/365; C04B2237/50; C04B2237/52; C04B2237/525; C04B2237/61; C04B2237/70; C04B2237/704; Y; Y10; Y10S; Y10S428/00; Y10S428/911; Y10T; Y10T428/00; Y10T428/24; Y10T428/24942; Y10T428/24992; Y10T428/26; Y10T428/29; Y10T428/2982; Y10T428/2991; Y10T428/2993; Y10T428/2995; Y10T428/30

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 349 words
A composite consisting essentially of a polycrystalline diamond body integrally bonded to a substrate of polycrystalline silicon carbide, said polycrystalline diamond body consisting essentially of a mass of diamond crystals adherently bonded together by a bonding medium consisting essentially of silicon carbide and a carbide and/or silicide of a metal component which forms a silicide with silicon and which forms a eutectiferous alloy with silicon, said metal component of said metal silicide being selected from the group consisting of cobalt, chromium, iron, hafnium, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, ruthenium, tantalum, thorium, titanium, uranium, vanadium, tungsten, yttrium, zirconium, and alloys thereof, said metal component of said metal carbide being selected from the group consisting of chromium, hafnium, titanium, zirconium, tantalum, vanadium, tungsten, molybdenum, and alloys thereof, said diamond crystals ranging in size from about 1 micron to about 1000 microns, the volume of said diamond crystals ranging from at least about 70% by volume up to about but less than 90% by volume of said body, said bonding medium being present in an amount ranging up to about 30% by volume of said body, said bonding medium being distributed at least substantially uniformly throughout said body, the portion of said bonding medium in contact with the surfaces of said diamond crystals being at least in a major amount silicon carbide, said diamond body being at least substantially porefree, said substrate consisting essentially of a hot-pressed or sintered polycrystalline silicon carbide body wherein the silicon carbide grains are bonded directly to each other ranging in density from about 85% to about 100% of the theoretical density of silicon carbide and containing silicon carbide in an amount of at least 90% by weight of said substrate and being free of constituents which have a significant deleteriouseffect on the mechanical properties of said composite, said polycrystalline diamond body forming an interface with said silicon carbide substrate wherein said bonding medium extends from said polycrystalline diamond body into contact with said silicon carbide substrate at least substantially filling any pores throughout said interface so that said interface is at least substantially pore-free.
Claim 2
Dependent Claim 349 words
A composite consisting essentially of a polycrystalline diamond body integrally bonded to a substrate of polycrystalline silicon carbide, said polycrystalline diamond body consisting essentially of a mass of diamond crystals adherently bonded together by a bonding medium consisting essentially of silicon carbide and a carbide and/or silicide of a metal component which forms a silicide with silicon and which forms a eutectiferous alloy with silicon, said metal component of said metal silicide being selected from the group consisting of cobalt, chromium, iron, hafnium, manganese, molybdenum, nickel, palladium, platinum, rhenium, rhodium, ruthenium, tantalum, thorium, titanium, uranium, vanadium, tungsten, yttrium, zirconium, and alloys thereof, said metal component of said metal carbide being selected from the group consisting of chromium, hafnium, titanium, zirconium, tantalum, vanadium, tungsten, molybdenum, and alloys thereof, said diamond crystals ranging in size from about 1 micron to about 1000 microns, the volume of said diamond crystals ranging from at least about 70% by volume up to about but less than 90% by volume of said body, said bonding medium being present in an amount ranging up to about 30% by volume of said body, said bonding medium being distributed at least substantially uniformly throughout said body, the portion of said bonding medium in contact with the surfaces of said diamond crystals being at least in a major amount silicon carbide, said diamond body being at least substantially porefree, said substrate consisting essentially of a hot-pressed or sintered polycrystalline silicon carbide body wherein the silicon carbide grains are bonded directly to each other ranging in density from about 85% to about 100% of the theoretical density of silicon carbide and containing silicon carbide in an amount of at least 90% by weight of said substrate and being free of constituents which have a significant deleteriouseffect on the mechanical properties of said composite, said polycrystalline diamond body forming an interface with said silicon carbide substrate wherein said bonding medium extends from said polycrystalline diamond body into contact with said silicon carbide substrate at least substantially filling any pores throughout said interface so that said interface is at least substantially pore-free.
Claim 3
Dependent Claim 14 words
The composite according to claim 1 wherein said bonding medium also contains elemental silicon.
Claim 4
Dependent Claim 27 words
The composite according to calim 1 wherein the volume of said diamond crystals ranges from about 70% by volume to about 89% by volume of said body.
Claim 5
Dependent Claim 27 words
The composite according to calim 1 wherein the volume of said diamond crystals ranges from about 70% by volume to about 89% by volume of said body.
Claim 6
Dependent Claim 21 words
The composite according to claim 1 wherein said diamond crystals are size-graded ranging from about 1 micron to about 60 microns.
Claim 7
Dependent Claim 19 words
The composite according to claim 1 wherein said bonding medium is comprised of silicon carbide and said metal silicide.
Claim 8
Dependent Claim 13 words
The composite according to claim 5 wherein said bonding medium contains elemental silicon.
Claim 9
Dependent Claim 19 words
The composite according to claim 1 wherein said bonding medium is comprised of silicon carbide and said metal carbide.
Claim 10
Dependent Claim 13 words
The composite according to claim 7 wherein said bonding medium contains elemental silicon.
Claim 11
Dependent Claim 22 words
The composite according to claim 1 wherein said bonding medium is comprised of silicon carbide, said metal silicide and said metal carbide.
Claim 12
Dependent Claim 13 words
The composite according to claim 9 wherein said bonding medium contains elemental silicon.

References Cited (Backward Citations)

US3239321A Cited
US3852078A Cited
US3913280A Cited
US3982911A Cited
US3912500A Cited
US3968194A Cited
US4024675A Cited
US4031178A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-12-23 1984-06-23 1984-12-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-12-23 1988-06-23 1988-12-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-12-23 1992-06-23 1992-12-23 $7700.00 Window Closed / Lapsed

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