Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
119 words
A semiconductor photoelectric conversion device employing a semiconductor layer having at least one inter-semiconductor heterojunction, which comprises at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap, and a third non-single-crystal semiconductor region defined between the first and second semiconductor regions to serve as a heterojunction, and wherein the third semiconductor region has an energy gap which successively changes from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and wherein the semiconductor layer has doped therein a recombination center neutralizer and a conductive material.
Claim 2
Dependent Claim
119 words
A semiconductor photoelectric conversion device employing a semiconductor layer having at least one inter-semiconductor heterojunction, which comprises at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap, and a third non-single-crystal semiconductor region defined between the first and second semiconductor regions to serve as a heterojunction, and wherein the third semiconductor region has an energy gap which successively changes from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and wherein the semiconductor layer has doped therein a recombination center neutralizer and a conductive material.
Claim 3
Dependent Claim
23 words
A semiconductor photoelectric conversion device according to claim 1, wherein the recombination center neutralizer is hydrogen or halogen or a combination of them.
Claim 4
Dependent Claim
26 words
A semiconductor photoelectric conversion device according to claim 1, wherein the conductive material is one or more of antimony, tellurium, tin, lead, indium, aluminum and gallium.
Claim 5
Dependent Claim
45 words
A semiconductor photoelectric conversion device according to claim 1, wherein each of the first, second and third semiconductor regions is formed of a material selected from a group consisting of silicon, germanium, silicon carbides, germanium carbides, silicon nitrides, germanium nitrides, silicon oxides and germanium oxides.
Claim 6
Dependent Claim
82 words
A semiconductor photoelectric conversion device according to claim 1, wherein the first semiconductor region is formed of Si x C 1-x where 0.5<x<1, wherein the second semiconductor region is formed of Si, and wherein the third semiconductor region is formed of Si y C 1-y where the value of y is larger than the value of x and changes from the value of x on the side of the first semiconductor region to 1 on the side of the second semiconductor region.
Claim 7
Dependent Claim
82 words
A semiconductor photoelectric conversion device according to claim 1, wherein the first semiconductor region is formed of Si 3 N 4-x where 0<x<4, wherein the second semiconductor region is formed of Si, and wherein the third semiconductor region is formed of Si 3 N 4-y where the value of y is larger than the value of x and changes from the value of x on the side of the first semiconductor region to 1 on the side of the second semiconductor region.
Claim 8
Dependent Claim
78 words
A semiconductor photoelectric conversion device according to claim 1, wherein the first semiconductor region is formed of SiO 2-x where 0<x<2, wherein the second semiconductor region is formed of Si, and wherein the third semiconductor region is formed of SiO 2-y where the value of y is larger than the value of x and changes from the value of x on the side of the first semiconductor region to 1 on the side of the second semiconductor region.