US4238686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of analyzing localized nonuniformities in luminescing materials
Assignee: AT&T Inc
•
Filing: 1979-09-05
•
Granted: 1980-12-09
•
Expires: 1999-09-05
Abstract
Abstract Localized nonuniformities in semiconductor crystals are analyzed by scanning the semiconductor surface with an electron beam and detecting and analyzing the radiation that is generated at the semiconductor surface by the electron beam and which passes through the semiconductor crystal.
Inventors
- 👤 Aland K. Chin
- 👤 Gilbert Y. Chin
- 👤 Henryk Temkin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:06
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2653
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
45 words
A method of analyzing localized nonuniformities in luminescing materials comprising the steps of: scanning a surface of the luminescing material with an electron beam; detecting the radiation produced by said electron beam which passes through said semiconductor; and analyzing the intensity of said transmitted radiation.
Claim 2
Independent Claim
45 words
A method of analyzing localized nonuniformities in luminescing materials comprising the steps of: scanning a surface of the luminescing material with an electron beam; detecting the radiation produced by said electron beam which passes through said semiconductor; and analyzing the intensity of said transmitted radiation.
Claim 3
Dependent Claim
15 words
A method as recited in claim 1 in which said luminescing material is a semiconductor.
Claim 4
Dependent Claim
16 words
A method as recited in claim 2 in which said semiconductor is a Group III-V compound.
Claim 5
Dependent Claim
22 words
A method as recited in claim 1 or 3 in which said electron beam has an energy between 10 and 30 kev.
Claim 6
Dependent Claim
20 words
A method as recited in claim 4 in which said electron beam has a width between 100 and 200 Angstroms.
Claim 7
Dependent Claim
23 words
A method as recited in claim 5 in which said semiconductor is selected from the group consisting of GaAs, GaAlAs, InGaAsP and InP.
Claim 8
Dependent Claim
41 words
A method as recited in claim 1 comprising the further step of scanning said semiconductor surface with a second electron beam, said second electron beam striking said semiconductor surface at a direction differing from said direction of said first electron beam.
References Cited (Backward Citations)
US3767304A
Cited
US4008402A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-09 | 1984-06-09 | 1984-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-09 | 1988-06-09 | 1988-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-09 | 1992-06-09 | 1992-12-09 | $7700.00 | Window Closed / Lapsed |