US4236832A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Strain insensitive integrated circuit resistor pair
Assignee: Toshiba Corp
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Filing: 1978-06-29
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Granted: 1980-12-02
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Expires: 1998-06-29
Abstract
Abstract A semiconductor device includes first and second resistor regions having the same resistance and formed in a main surface of a silicon substrate to extend in a perpendicular direction. When the resistor regions have a p-conductivity type, said main surface is a {100} face, {511} face, {811} face or {911} face. When the resistor regions are of an n-conductivity type, said main surface is a {111} face.
Inventors
- 👤 Shigeru Komatsu
- 👤 Satoshi Takahashi
- 👤 Kouji Suzuki
- 👤 Masao Wakatsuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:30
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10D; H10D1/00; H10D1/40; H10D1/43; H10D62/00; H10D62/40; H10D62/405; H10W90/00; H10W90/701; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
146 words
A semiconductor integrated circuit device comprising: a silicon semiconductor substrate of N-conductivity type having a least one main surface of a substantial (100), (511), (811), or (911) crystal face; a P-conductivity type resistor unit formed in said main surface, said resistor unit including (1) a first P-conductivity type resistor extending in a first direction in said main surface and having a first end and a second end, and (2) a second P-conductivity type resistor extending in a second direction in said main surface perpendicular to said first direction and having a first end solely connected to said second end of said first P-conductivity type resistor and a second end, said first and second P-conductivity type resistors having the same resistance; and a functional element formed in said main surface apart from said resistor unit and connected to said second end of said second P-conductivity type resistor.
Claim 2
Dependent Claim
146 words
A semiconductor integrated circuit device comprising: a silicon semiconductor substrate of N-conductivity type having a least one main surface of a substantial (100), (511), (811), or (911) crystal face; a P-conductivity type resistor unit formed in said main surface, said resistor unit including (1) a first P-conductivity type resistor extending in a first direction in said main surface and having a first end and a second end, and (2) a second P-conductivity type resistor extending in a second direction in said main surface perpendicular to said first direction and having a first end solely connected to said second end of said first P-conductivity type resistor and a second end, said first and second P-conductivity type resistors having the same resistance; and a functional element formed in said main surface apart from said resistor unit and connected to said second end of said second P-conductivity type resistor.
Claim 3
Dependent Claim
25 words
The semiconductor device according to claim 1, wherein said first P-conductivity type resistor and said second P-conductivity type resistor are in contact for electrical connection.
Claim 4
Dependent Claim
32 words
The semiconductor device according to claim 1, wherein said first P-conductivity type resistor and said second P-conductivity type resistor are separately formed in said main surface of said N-conductivity type silicon substrate.
Claim 5
Dependent Claim
41 words
The semiconductor device according to claim 1, 2, or 3, further comprising a supporting plate on which said N-conductivity type silicon substrate is mounted, and a plastic resin molding in which said silicon substrate and said supporting plate are hermetically sealed.
Claim 6
Dependent Claim
64 words
The semiconductor device according to claim 4, wherein said first P-conductivity type resistor comprises a first plurality of separate resistor regions arranged in parallel, and said second P-conductivity type resistor comprises a second plurality of separate resistor regions arranged in parallel, said first plurality of separate resistor regions extending in a direction perpendicular to the direction of said second plurality of separate resistor regions.
Claim 7
Dependent Claim
142 words
A semiconductor integrated circuit device comprising: a silicon semiconductor substrate of P-conductivity type having at least one main surface of a substantial (111) crystal face; a N-conductivity type resistor unit formed in said main surface, said resistor unit including (1) a first N-conductivity type resistor extending in a first direction in said main surface and having a first end and a second end, and (2) a second N-conductivity type resistor extending in a second direction in said main surface perpendicular to said first direction and having a first end solely connected to said second end of said first N-conductivity type resistor and a second end, said first and second N-conductivity type resistors having the same resistance; and a functional element formed in said main surface apart from said resistor unit and connected to said second end of said second N-conductivity type resistor.
Claim 8
Dependent Claim
142 words
A semiconductor integrated circuit device comprising: a silicon semiconductor substrate of P-conductivity type having at least one main surface of a substantial (111) crystal face; a N-conductivity type resistor unit formed in said main surface, said resistor unit including (1) a first N-conductivity type resistor extending in a first direction in said main surface and having a first end and a second end, and (2) a second N-conductivity type resistor extending in a second direction in said main surface perpendicular to said first direction and having a first end solely connected to said second end of said first N-conductivity type resistor and a second end, said first and second N-conductivity type resistors having the same resistance; and a functional element formed in said main surface apart from said resistor unit and connected to said second end of said second N-conductivity type resistor.
Claim 9
Dependent Claim
25 words
The semiconductor device according to claim 6, wherein said first N-conductivity type resistor and said second N-conductivity type resistor are in contact for electrical connection.
Claim 10
Dependent Claim
30 words
The semiconductor device according to claim 6, wherein said first N-conductivity type resistor and said second N-conductivity type resistor are separately formed in said main surface of said silicon substrate.
Claim 11
Dependent Claim
43 words
The semiconductor device according to claim 6, 7, or 8, further comprising a supporting plate on which said P-conductivity type silicon substrate is mounted, and a plastic resin molding in which said P-conductivity type silicon substrate and said supporting plate are hermetically sealed.
Claim 12
Dependent Claim
64 words
The semiconductor device according to claim 9, wherein said first N-conductivity type resistor comprises a first plurality of separate resistor regions arranged in parallel, and said second N-conductivity type resistor comprises a second plurality of separate resistor regions arranged in parallel, said first plurality of separate resistor regions extending in a direction perpendicular to the direction of said second plurality of separate resistor regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-12-02 | 1984-06-02 | 1984-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-12-02 | 1988-06-02 | 1988-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-12-02 | 1992-06-02 | 1992-12-02 | $7700.00 | Window Closed / Lapsed |