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US4236165A
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Planar semiconductor device
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1978-12-05
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Granted: 1980-11-25
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Expires: 1998-12-05
Abstract
Abstract Planar semiconductor device including a crystalline layer of Ga x Al 1-x Sb compound semiconductor (0.1<x<0.3) grown on a GaSB substrate and a narrow energy band gap semiconductor grown as an active layer on the crystalline layer and having electrodes formed on the active layer in the planar form.
Inventors
- 👤 Mitsuo Kawashima
- 👤 Kimihiro Ohta
- 👤 Shoei Kataoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:54
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10F30/00; H10F30/10; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/193; H10N; H10N80/00; H10N80/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
118 words
Planar semiconductor device comprising: a GaSb substrate, a crystalline growth layer of a Ga x Al 1-x Sb compound semiconductor formed on said GaSb substrate where x ranges between 0.1 and 0.3, an active layer of a narrow energy band gap semiconductor formed on said crystalline growth layer, said narrow energy band gap semi-conductor being a III-V compound semiconductor having a lattice constant of between about 6.04 A and about 6.2 A, and consisting of one member selected from the group consisting of Ga y In 1-y Sb (0.7<y<0.8), In As y Sb 1-y (0.7<y<1) and Ga y In 1-y Sb y As 1-y (0< y <1), and electrodes formed on said active layer in the planar form.
Claim 2
Dependent Claim
118 words
Planar semiconductor device comprising: a GaSb substrate, a crystalline growth layer of a Ga x Al 1-x Sb compound semiconductor formed on said GaSb substrate where x ranges between 0.1 and 0.3, an active layer of a narrow energy band gap semiconductor formed on said crystalline growth layer, said narrow energy band gap semi-conductor being a III-V compound semiconductor having a lattice constant of between about 6.04 A and about 6.2 A, and consisting of one member selected from the group consisting of Ga y In 1-y Sb (0.7<y<0.8), In As y Sb 1-y (0.7<y<1) and Ga y In 1-y Sb y As 1-y (0< y <1), and electrodes formed on said active layer in the planar form.
Claim 3
Dependent Claim
14 words
Planar semiconductor device as set forth in claim 1 wherein said electrodes are metal.
Claim 4
Dependent Claim
35 words
Planar semiconductor device as set forth in claim 2 wherein said electrodes are formed on said narrow energy band gap semiconductor through n-type Ga x Al 1-x Sb where x ranges between 0.1 and 0.3.
Claim 5
Dependent Claim
35 words
Planar semiconductor device as set forth in claim 2 wherein said electrodes are formed on said narrow energy band gap semiconductor through p-type Ga x Al 1-x Sb where x ranges between 0.1 and 0.3.
Claim 6
Dependent Claim
21 words
Planar semiconductor device as set forth in claim 1 wherein said electrodes are formed on opposite ends of said active layer.
Claim 7
Dependent Claim
65 words
Planar semiconductor device as set forth in claim 5 further comprising: a crystalline growth layer of a Ga x Al 1-x Sb compound semiconductor provided on said active layer where x ranges between 0.1 and 0.3, an active layer of a narrow energy band gap semiconductor formed on said crystalline growth layer, and a pair of electrodes provided on opposite ends of said active layer.
References Cited (Backward Citations)
US4015284A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-11-25 | 1984-05-26 | 1984-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-11-25 | 1988-05-26 | 1988-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-11-25 | 1992-05-26 | 1992-11-25 | $7700.00 | Window Closed / Lapsed |