Arc control in plasma arc reactors

Claim 2

A process for controlling the electrical arc in a plasma arc reactor having a first and a second electrode in which a reaction layer covers the first electrode and is a point of arc attachment, which reaction layer is characterized as non-conductive in that the reaction layer at some point during the reaction causes an electrical arc struck between the reaction layer-covered first electrode and the uncovered second electrode to short circuit, which process comprises adding to the reaction layer a material that is more electrically conductive than the reaction layer whereby the arc is stabilized between the uncovered second electrode and the reaction layer-covered first electrode.

Claim 3

A process of claim 1 in which the more electrically conductive material is added to the reaction layer as part of a charge of reactant material.

Claim 4

The process of claim 1 in which the plasma arc reactor is a falling film plasma arc reactor.

Claim 5

A process for decomposing a metallic compound to recover the metal using a plasma arc reactor having two electrodes in which a feed of the metallic compound forms a falling-film on a wall of an electrode which falling film is characterized as non-conductive in that at some point during its descent the falling film causes an electrical arc struck between one electrode and the falling-film on the other electrode to short-circuit, which process comprises adding to the falling film a material that is more electrically conductive than the falling film whereby the falling film is rendered conductive and the arc is stabilized.

Claim 6

A process for decomposing a metallic compound to recover the metal using a plasma arc reactor having two electrodes in which a feed of the metallic compound forms a falling-film on a wall of an electrode which falling film is characterized as non-conductive in that at some point during its descent the falling film causes an electrical arc struck between one electrode and the falling-film on the other electrode to short-circuit, which process comprises adding to the falling film a material that is more electrically conductive than the falling film whereby the falling film is rendered conductive and the arc is stabilized.

Claim 7

The process of claim 4 in which the metallic compound is characterized as non-conductive.

Claim 8

The process of claim 4 or 5 in which the more electrically conductive material is added to the falling film as part of the feed of metallic compound.

Claim 9

The process of claim 5 in which the metallic compound is molybdenum disulfide and the metal recovered is molybdenum.

Claim 10

The process of claim 7 in which the more electrically conductive material is fine carbon.

Claim 11

A process for decomposing a metallic compound to produce the metal in a falling film plasma arc reactor, while metallic compound is characterized as non-conductive in that a falling film comprising the metallic compound causes an electrical arc struck between an uncovered electrode and a falling film-covered electrode to short circuit, comprising (a) supplying a swirling vortical stabilizing gas stream adjacent the cathode of a plasma arc reactor comprising a cathode and an anode, (b) introducing solid particles of the non-conductive metallic compound into the plasma arc reactor between the ends of an electrical arc, (c) establishing the arc between the cathode and anode to melt the solid particles of the non-conductive metallic compound into a film of material on the wall of the anode, (d) decomposing the non-conductive metallic compound and stabilizing the electrical arc by adding a material that is more electrically conductive than the falling film to the film on the wall of the anode; and, (e) collecting the metal exiting the plasma reactor.

Claim 12

A process for decomposing a metallic compound to produce the metal in a falling film plasma arc reactor, while metallic compound is characterized as non-conductive in that a falling film comprising the metallic compound causes an electrical arc struck between an uncovered electrode and a falling film-covered electrode to short circuit, comprising (a) supplying a swirling vortical stabilizing gas stream adjacent the cathode of a plasma arc reactor comprising a cathode and an anode, (b) introducing solid particles of the non-conductive metallic compound into the plasma arc reactor between the ends of an electrical arc, (c) establishing the arc between the cathode and anode to melt the solid particles of the non-conductive metallic compound into a film of material on the wall of the anode, (d) decomposing the non-conductive metallic compound and stabilizing the electrical arc by adding a material that is more electrically conductive than the falling film to the film on the wall of the anode; and, (e) collecting the metal exiting the plasma reactor.

Claim 13

A process for controlling an electrical arc in a plasma arc reactor comprising (a) supplying a swirling vortical stabilizing gas stream adjacent the cathode of the plasma arc reactor comprising a cathode and an anode, (b) introducing solid particles of reactant material into the plasma arc reactor between the ends of an electrical arc, (c) establishing the arc between the cathode and anode to melt the reactant material forming a film on the wall of the anode, the film being characterized as non-conductive at some point during its descent in that the film causes an electrical arc struck between the cathode and film-covered anode to short circuit; and (d) adding a material that is more electrically conductive than the film comprising melted reactant material to the film on the wall of the anode whereby the electrical arc is stabilized.

Claim 14

A process for controlling an electrical arc in a plasma arc reactor comprising (a) supplying a swirling vortical stabilizing gas stream adjacent the cathode of the plasma arc reactor comprising a cathode and an anode, (b) introducing solid particles of reactant material into the plasma arc reactor between the ends of an electrical arc, (c) establishing the arc between the cathode and anode to melt the reactant material forming a film on the wall of the anode, the film being characterized as non-conductive at some point during its descent in that the film causes an electrical arc struck between the cathode and film-covered anode to short circuit; and (d) adding a material that is more electrically conductive than the film comprising melted reactant material to the film on the wall of the anode whereby the electrical arc is stabilized.

Claim 15

The process of claim 9 or 10 in which the more electrically conductive material is added with the solid particles in step (b).

Claim 16

A process for reacting molybdenum disulfide to produce substantially pure molybdenum comprising (a) supplying a swirling vortical stabilizing gas stream adjacent the cathode of a plasma arc reactor comprising a cathode and an anode, (b) introducing solid particles of molybdenum disulfide into the plasma reactor between the ends of an electrical arc, (c) establishing the arc between the cathode and anode to melt the solid particles of molybdenum disulfide into a film of material on the wall of the anode, (d) reacting the molybdenum disulfide by adding a material that is more electrically conductive than the film comprising molybdenum disulfide to the film on the wall of the anode and producing substantially pure molybdenum; and, (e) collecting the substantially pure molybdenum exiting the plasma reactor.

Claim 17

A process for reacting molybdenum disulfide to produce substantially pure molybdenum comprising (a) supplying a swirling vortical stabilizing gas stream adjacent the cathode of a plasma arc reactor comprising a cathode and an anode, (b) introducing solid particles of molybdenum disulfide into the plasma reactor between the ends of an electrical arc, (c) establishing the arc between the cathode and anode to melt the solid particles of molybdenum disulfide into a film of material on the wall of the anode, (d) reacting the molybdenum disulfide by adding a material that is more electrically conductive than the film comprising molybdenum disulfide to the film on the wall of the anode and producing substantially pure molybdenum; and, (e) collecting the substantially pure molybdenum exiting the plasma reactor.

Claim 18

The process of claim 12 in which the more electrically conductive material is added to the falling film by introducing the more electrically conductive material into the plasma reactor with the solid particles of molybdenum disulfide.

Claim 19

The process of claim 13 in which the more electrically conductive material is fine carbon.