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US4231838A
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US
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Method for flux growth of KTiOPO4 and its analogues
Assignee: EIDP Inc
•
Filing: 1978-04-20
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Granted: 1980-11-04
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Expires: 1998-04-20
Abstract
Abstract A process for the manufacture of single crystals of MTiOXO 4 , wherein M is K, Rb or Tl and X is P or As, of optical quality and of sufficient size for use in nonlinear optical devices. In the process, starting ingredients chosen to be within the region of the ternary phase diagram in which the desired crystal MTiOXO 4 product is the only stable solid phase, are heated to produce MTiOXO 4 and then controllably cooled to crystallize the desired product. In a preferred method the ingredients are placed in a temperature gradient in which the hot zone ranges from about 800°-1000° C. and the cold zone about 10°-135° C. cooler, maintaining the temperature gradient for about 3 days to about 3 weeks, cooling, and recovering MTiOXO 4 crystals.
Inventors
- 👤 Thurman E. Gier
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:54
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C01; C01B; C01B25/00; C01B25/16; C01B25/26; C01B25/37; C01B25/45; C30B11/00; C30B15/00; C30B9/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
286 words
In an improved process for producing a single crystal of MTiOXO 4 by combining and heating starting materials comprising MTiOXO 4 and a nonaqueous flux M/X/O, or their precursors, where M is selected from the group consisting of K, Rb and Tl and X is selected from the group consisting of P and As, said process being carried out either by (a) heating the combined starting materials, in such amounts that the ratio of MTiOXO 4 to flux at the highest heating temperature is greater than the saturation value, in a temperature gradient wherein the hot zone is within the range about 800° C. to about 1000° C. and the cold zone is within the range about 10° C. to about 135° C. cooler than the hot zone so as to produce a nonaqueous melt; maintaining the temperature gradient for about 3 days to about 3 weeks to allow crystal growth; and cooling and recovering crystalline MTiOXO 4 , or (b) uniformly heating the combined starting materials, in such amounts that the ratio of MTiOXO 4 to flux at the highest heating temperature is less than the saturation value, to a temperature within the range about 700° C. to about 1100° C. until a clear nonaqueous solution is produced; slowly cooling the solution at a rate no greater than 5° C. per hour to effect crystallization of MTiOXO 4 ; and recovering crystalline MTiOXO 4 , the improvement characterized in that the composition of the combined starting materials is within the trigonal regions ABC, DEF, GHI, JKL, MNO, PQR or STU of FIGS. 1 to 7, respectively, wherein the Pna2 1 -type MTiOXO 4 is the only stable solid phase in equilibrium with the molten flux.
Claim 2
Dependent Claim
286 words
In an improved process for producing a single crystal of MTiOXO 4 by combining and heating starting materials comprising MTiOXO 4 and a nonaqueous flux M/X/O, or their precursors, where M is selected from the group consisting of K, Rb and Tl and X is selected from the group consisting of P and As, said process being carried out either by (a) heating the combined starting materials, in such amounts that the ratio of MTiOXO 4 to flux at the highest heating temperature is greater than the saturation value, in a temperature gradient wherein the hot zone is within the range about 800° C. to about 1000° C. and the cold zone is within the range about 10° C. to about 135° C. cooler than the hot zone so as to produce a nonaqueous melt; maintaining the temperature gradient for about 3 days to about 3 weeks to allow crystal growth; and cooling and recovering crystalline MTiOXO 4 , or (b) uniformly heating the combined starting materials, in such amounts that the ratio of MTiOXO 4 to flux at the highest heating temperature is less than the saturation value, to a temperature within the range about 700° C. to about 1100° C. until a clear nonaqueous solution is produced; slowly cooling the solution at a rate no greater than 5° C. per hour to effect crystallization of MTiOXO 4 ; and recovering crystalline MTiOXO 4 , the improvement characterized in that the composition of the combined starting materials is within the trigonal regions ABC, DEF, GHI, JKL, MNO, PQR or STU of FIGS. 1 to 7, respectively, wherein the Pna2 1 -type MTiOXO 4 is the only stable solid phase in equilibrium with the molten flux.
Claim 3
Dependent Claim
32 words
The process of claim 1 wherein a seed crystal of MTiOXO 4 is at least partially immersed in the melt in the cold zone of the temperature gradient to control crystal growth.
Claim 4
Dependent Claim
73 words
The process of claim 1 for producing KTiOPO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 1 ternary phase diagram K 2 O/P 2 O 5 /(TiO 2 ) 2 bounded by the three points A, B and C defined by the mol fractions: ______________________________________
K.sub.2 O
P.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
A .333 .333 .333
B .50 .43 .07
C .585 .32 .095
______________________________________
Claim 5
Dependent Claim
73 words
The process of claim 1 for producing RbTiOPO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 2 ternary phase diagram Rb 2 O/P 2 O 5 /(TiO 2 ) 2 bounded by the three points D, E and F defined by the mol fractions: ______________________________________
Rb.sub.2 O
P.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
D .333 .333 .333
E .490 .430 .080
F .595 .320 .085
______________________________________
Claim 6
Dependent Claim
73 words
The process of claim 1 for producing TlTiOPO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 3 ternary phase diagram Tl 2 O/P 2 O 5 /(TiO 2 ) 2 bounded by the three points G, H and I defined by the mol fractions: ______________________________________
Tl.sub.2 O
P.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
G .333 .333 .333
H .540 .390 .070
I .650 .300 .050
______________________________________
Claim 7
Dependent Claim
73 words
The process of claim 1 for producing KTiOAsO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 4 ternary phase diagram K 2 O/As 2 O 5 /(TiO 2 ) 2 bounded by the three points J, K and L defined by the mol fractions: ______________________________________
K.sub.2 O
As.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
J .333 .333 .333
K .390 .600 .01
L .635 .320 .045
______________________________________
Claim 8
Dependent Claim
73 words
The process of claim 1 for producing RbTiOAsO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 5 ternary phase diagram Rb 2 O/As 2 O 5 /(TiO 2 ) 2 bounded by the three points M, N and O defined by the mol fractions ______________________________________
Rb.sub.2 O
As.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
M .333 .333 .333
N .44 .50 .06
O .64 .30 .06
______________________________________
Claim 9
Dependent Claim
73 words
The process of claim 1 for producing TlTiOAsO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 6 ternary phase diagram Tl 2 O/As 2 O 5 /(TiO 2 ) 2 bounded by the three points P, Q and R defined by the mol fractions ______________________________________
Tl.sub.2 O
As.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
P .333 .333 .333
Q .330 .640 .030
R .600 .375 .025
______________________________________
Claim 10
Dependent Claim
71 words
The process of claim 1 for producing (K, Rb)TiOPO 4 wherein said starting ingredients are selected so as to fall within the area of the FIG. 7 ternary phase diagram RbKO/P 2 O 5 /(TiO 2 ) 2 bounded by the three points S, T and U defined by the mol fractions ______________________________________
RbKO P.sub.2 O.sub.5
(TiO.sub.2).sub.2
______________________________________
S .333 .333 .333
T .445 .460 .095
U .625 .315 .060
______________________________________
References Cited (Backward Citations)
US3949323A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-11-04 | 1984-05-05 | 1984-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-11-04 | 1988-05-05 | 1988-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-11-04 | 1992-05-05 | 1992-11-04 | $7700.00 | Window Closed / Lapsed |