US4231058A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Tungsten-titanium-chromium/gold semiconductor metallization
Assignee: United States Department of the Navy
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Filing: 1978-11-22
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Granted: 1980-10-28
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Expires: 1998-11-22
Abstract
Abstract Improved TRAPATT diodes in which the improvement comprises a high-temperae metallization on silicon from which the diodes are formed. Metallization is applied to a silicon wafer by sputtering a layer of titanium, chromium, tungsten alloy followed by a gold layer. The desired diode shape and size is defined in the gold layer by use of a pattern of the proper shape and size in combination with a photolithographic process. The metallization layers and the silicon are then etched so as to form a plurality of individual shaped (mesa or ring structure) TRAPATT diodes. Such diodes can withstand 610° C. for one hour without degradation.
Inventors
- 👤 K. Reed Gleason
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:07
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/40; H10P; H10P54/00; H10W; H10W20/00; H10W20/40; H10W40/00; H10W40/20; H10W40/25; H10W40/254
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
27 words
An improved diode in which the improvement comprises: a metallization layer of an alloy of chromium, titanium and tungsten on silicon followed by a layer of gold.
Claim 2
Dependent Claim
27 words
An improved diode in which the improvement comprises: a metallization layer of an alloy of chromium, titanium and tungsten on silicon followed by a layer of gold.
Claim 3
Dependent Claim
21 words
An improved diode as claimed in claim 1 wherein: the composition of said alloy is 56% W, 24% Ti, 20% Cr.
Claim 4
Dependent Claim
23 words
An improved diode as claimed in claim 1 wherein: said alloy has a thickness of from about 500 A to about 2000 A.
Claim 5
Dependent Claim
25 words
An improved diode as claimed in claim 1 wherein: said layer of gold has a thickness of from about 500 A to about 250,000 A.
Claim 6
Dependent Claim
26 words
An improved diode as claimed in claim 3, in which: said layer of gold has a thickness of from about 500 A to about 250,000 A.
Claim 7
Dependent Claim
22 words
An improved diode as claimed in claim 4 in which: the composition of said alloy is 56% W, 24% Ti, 20% Cr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-10-28 | 1984-04-28 | 1984-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-10-28 | 1988-04-28 | 1988-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-10-28 | 1992-04-28 | 1992-10-28 | $7700.00 | Window Closed / Lapsed |