Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
250 words
In a transversal filter of the type in which an analog charge transfer device shift register is integrated on a doped semiconductor substrate and includes a plurality of stages which have parallel inputs for receiving an input signal and a plurality of evaulation circuits connected thereto, each evaluation circuit including an area doped opposite to the substrate, first and second input gates and a transfer gate immediately adjacent the transfer channel of the charge transfer device shift register, one of the input gates connected to an input signal, the other input gate connected to a constant voltage and the oppositely doped area and the transfer gate respectively connected to receive first and second clock pulses from a clock, and in which the charge transfer device shift register includes an output, in combination therewith, the improvement comprising: a counter connected to receive and operated by clock pulses from the clock, and including a plurality of outputs; a plurality of comparators each including first and second inputs and an output, the first inputs connected to said counter; a plurality of gate circuits connected to the evaluation circuits; and a plurality of memories operable to provide a plurality of output signals at a plurality of outputs connected to respective inputs of said comparators, said outputs of said comparators connected to said gate circuits for causing blocking the evaluation circuits to one of the clock pulses as a function of the respective comparison results between said counter output signals and said memory output signals.
Claim 2
Dependent Claim
250 words
In a transversal filter of the type in which an analog charge transfer device shift register is integrated on a doped semiconductor substrate and includes a plurality of stages which have parallel inputs for receiving an input signal and a plurality of evaulation circuits connected thereto, each evaluation circuit including an area doped opposite to the substrate, first and second input gates and a transfer gate immediately adjacent the transfer channel of the charge transfer device shift register, one of the input gates connected to an input signal, the other input gate connected to a constant voltage and the oppositely doped area and the transfer gate respectively connected to receive first and second clock pulses from a clock, and in which the charge transfer device shift register includes an output, in combination therewith, the improvement comprising: a counter connected to receive and operated by clock pulses from the clock, and including a plurality of outputs; a plurality of comparators each including first and second inputs and an output, the first inputs connected to said counter; a plurality of gate circuits connected to the evaluation circuits; and a plurality of memories operable to provide a plurality of output signals at a plurality of outputs connected to respective inputs of said comparators, said outputs of said comparators connected to said gate circuits for causing blocking the evaluation circuits to one of the clock pulses as a function of the respective comparison results between said counter output signals and said memory output signals.
Claim 3
Dependent Claim
65 words
The improved transversal filter set forth in claim 1, wherein: a first evaluation circuit is constructed for a positive evaluation coefficient and includes a first gate electrode adjacent the oppositely doped area connected to a direct voltage which is at most as large as the input signal to be evaluated, and a second gate electrode adjacent the transfer gate connected to receive the input signal.
Claim 4
Dependent Claim
67 words
The improved transversal filter set forth in claim 1, wherein: an evaluation circuit is constructed for a positive evaluation coefficient and includes a first input gate electrode adjacent the oppositely doped area connected to receive the input signal, and a second input gate electrode adjacent the transfer channel and connected to a direct voltage which is at least as large as the input signal to be evaluated.
Claim 5
Dependent Claim
82 words
The improved transversal filter set forth in claim 1, comprising: an inverter connected to receive and invert the input signal; and wherein an evaluation circuit is constructed for a negative evaluation coefficient and includes a first gate electrode adjacent the oppositely doped area and connected to a direct voltage which is at most as large as the input signal to be evaluated, and a second gate electrode adjacent the transfer channel and connected to said inverter to receive the inverted input signal.
Claim 6
Dependent Claim
63 words
The improved transversal filter set forth in claim 1, wherein: at least one of the stages of the charge transfer device shift register includes a second input connected to the respective mentioned input of that stage; and comprising an additional evaluation circuit connected to said second input and constructed for the same operational sign of the respective mentioned evaluation circuit of that stage.
Claim 7
Dependent Claim
85 words
The improved transversal filter set forth in claim 1, wherein: at least one stage of said charge transfer device shift register has at least two of the evaluation circuits connected thereto, each of these evaluation circuits connected to receive the input signal; one of these evaluation circuits constructed for a positive evaluation coefficient and the other constructed for a negative evaluation coefficient; and wherein one of said memories feeds a "0" to a selected evaluation circuit of these two evaluation circuits via the respective comparator.
Claim 8
Dependent Claim
34 words
The improved transversal filter set forth in claim 1, wherein a stage of the charge transfer device shift register includes two inputs which are positioned opposite one another with respect to the transfer channel.
Claim 9
Dependent Claim
62 words
The improved transversal filter set forth in claim 1, wherein: at least one of the stages of the charge transfer device shift register has a pair of the evaluation circuits disposed on opposite sides of the transfer channel; and each of these evaluation circuits include a gate electrode which is of a different size than the corresponding gate electrode of the other.
Claim 10
Dependent Claim
140 words
The improved transversal filter set forth in claim 1, wherein: at least one of the stages of the charge transfer device shift register as a pair of the evaluation circuits on opposite sides thereof; each of the pair of evaluation circuits includes first and second input gate electrodes; and further comprising: a first common connection for said first input gate electrodes; a second common connection for said second input gate electrodes; a pair of additional memories; and transistor means connected to said first and second common connections, on the one hand, and to the input signal, to a first constant voltage which is at most as large as the smallest input signal and to a second constant voltage which is at least as large as the largest input signal, said transistor means connected to and selectively operated by said memories.
Claim 11
Dependent Claim
31 words
The improved transversal filter set forth in claim 9, comprising: an inverter for receiving the input signal, said inverter connected to said transistor means for providing the inverted input signal thereto.
Claim 12
Dependent Claim
21 words
The improved transversal filter set forth in claim 10, wherein said memories are constructed as stages as a static shift register.
Claim 13
Dependent Claim
25 words
The improved transversal filter set forth in claim 11, wherein said transversal filter is constructed as a semiconductor circuit monolithically integrated on a semiconductor substrate.