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US4228142A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for producing diamond-like carbon

Assignee: Individual
•
Filing: 1979-08-31
•
Granted: 1980-10-14
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Expires: 1999-08-31
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Abstract

Abstract A process is described for the production of dense metastable phases of carbon which have characteristics similar to diamond. Particulates of the metastable carbon are produced by reacting silicon carbide or a silicon carbide precursor, such as a silane or silicon metal, with a fluorocarbon, such as carbon tetrafluoride at a temperature greater than about 800° C. A preferred range is from about 900° C. to 1200° C. The reaction may be carried out in a high voltage electrical diacharge, or other plasma, or in a furnace. The presence of a "promoter" metal, such as nickel and iron, increases the reaction rate and the quantity of the metastable carbon phases. Relatively large quantities of these diamond-like particulates are produced, and their properties are such as to make them useful for many of the same applications for which commercial diamonds are utilized. They are also useful in numerous high temperature applications. Layers of the metastable carbon phases may be applied to substrates to produce hard and impermeable surfaces thereby producing cutting elements, styli, etc.

Inventors

  • 👤 Cressie E. Holcombe, Jr.
  • 👤 James B. Condon
  • 👤 D. H. Johnson

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 19:44
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C01; C01B; C01B32/00; C01B32/05; C09; C09K; C09K3/00; C09K3/14; C09K3/1409; C09K3/1454

Claims Analysis

Total Claims: 28
Claim 1
Independent Claim 29 words
A process for producing metastable carbon phases which comprises reacting a fluorocarbon with silicon carbide or a precursor of silicon carbide at a temperature of above about 800° C.
Claim 2
Dependent Claim 29 words
A process for producing metastable carbon phases which comprises reacting a fluorocarbon with silicon carbide or a precursor of silicon carbide at a temperature of above about 800° C.
Claim 3
Dependent Claim 13 words
The process of claim 1 wherein the precursor of silicon carbide is silicon.
Claim 4
Dependent Claim 16 words
The process of claim 1 wherein the precursor of silicon carbide is a halogenated alkyl silane.
Claim 5
Dependent Claim 16 words
The process of claim 3 wherein the halogenated alkyl silane has a silicon-to-carbon ratio of 1.
Claim 6
Dependent Claim 22 words
The process of claim 4 wherein the halogenated alkyl silane is selected from the group consisting of methyltrichlorosilane, methyltribromosilane, methyltriiodosilane and dimethyltetrachlorodisilane.
Claim 7
Dependent Claim 24 words
The process of claim 1, 2 or 3 where the fluorocarbon is selected from the group consisting of carbon tetrafluoride, perfluoroethane, perfluorocyclohexane and difluoromethane.
Claim 8
Dependent Claim 24 words
A process for producing metastable carbon phases which comprises reacting silicon carbide and carbon tetrafluoride at a temperature between about 800° and 1200° C.
Claim 9
Dependent Claim 24 words
A process for producing metastable carbon phases which comprises reacting silicon carbide and carbon tetrafluoride at a temperature between about 800° and 1200° C.
Claim 10
Dependent Claim 12 words
The process of claim 7 wherein the temperature is about 1000° C.
Claim 11
Dependent Claim 11 words
The process of claim 7 wherein the silicon carbide is β-SiC.
Claim 12
Dependent Claim 32 words
The process of claim 7 wherein the reacting step is carried out in the presence of a promoter metal selected from a group consisting of iron, nickel, chromium, aluminum and alloys thereof.
Claim 13
Dependent Claim 22 words
The process of claim 10 wherein the carbon tetrafluoride is contacted with the promoter metal prior to reacting with the silicon carbide.
Claim 14
Dependent Claim 26 words
The process of claim 10 wherein about 5 wt % iron is mixed with the silicon carbide prior to the reacting step with the carbon tetrafluoride.
Claim 15
Dependent Claim 26 words
The process of claim 10 wherein about 5 wt % nickel is mixed with the silicon carbide prior to the reacting step with the carbon tetrafluoride.
Claim 16
Dependent Claim 29 words
The process of claim 12 wherein the silicon carbide is β-SiC having a particle range of about 0.002 to 60 μm, and the reacting temperature is about 1000° C.
Claim 17
Dependent Claim 64 words
The process of claim 14 wherein the reacting step is carried out by placing the β-SiC and 5 wt % Fe in a graphite boat in a graphite tube furnace heated at about 1000° C. and flowing the CF 4 through the furnace for a time sufficient to effect the reaction between the β-SiC and the CF 4 to produce the metastable carbon phases.
Claim 18
Dependent Claim 25 words
A process for producing metastable carbon phases which comprises heating a mixture of methyltrichlorosilane and carbon tetrafluoride at a temperature greater than about 800° C.
Claim 19
Dependent Claim 25 words
A process for producing metastable carbon phases which comprises heating a mixture of methyltrichlorosilane and carbon tetrafluoride at a temperature greater than about 800° C.
Claim 20
Dependent Claim 24 words
The process of claim 16 wherein the mole ratio of CF 4 to CH 3 SiCl 3 is from about 1:1 to about 1:2.
Claim 21
Dependent Claim 15 words
The process of claim 16 wherein the reacting step is carried out in a plasma.
Claim 22
Dependent Claim 20 words
The process of claim 16 wherein the reacting step is carried out upon a substrate heated to above 800° C.
Claim 23
Dependent Claim 62 words
A process for producing a film of metastable carbon phases on a substrate which comprises heating the substrate to above about 800° C., flowing methyltrichlorosilane past the heated substrate forming a film of SiC upon the substrate, and then flowing carbon tetrafluoride past the heated film of SiC to react with the SiC and produce the film of the metastable carbon phases.
Claim 24
Dependent Claim 62 words
A process for producing a film of metastable carbon phases on a substrate which comprises heating the substrate to above about 800° C., flowing methyltrichlorosilane past the heated substrate forming a film of SiC upon the substrate, and then flowing carbon tetrafluoride past the heated film of SiC to react with the SiC and produce the film of the metastable carbon phases.
Claim 25
Dependent Claim 26 words
The process of claim 20 further comprising applying a film of iron to the substrate prior to the reacting of the SiC with the carbon tetrafluoride.
Claim 26
Dependent Claim 38 words
The process of claim 20 further comprising contacting the carbon tetrafluoride with a promoter metal selected from a group consisting of iron, nickel, chromium, aluminum, and alloys thereof, prior to flowing past the heated film of the SiC.
Claim 27
Dependent Claim 17 words
The process of claim 7 wherein the reacting step is carried out in a fluidized bed reactor.
Claim 28
Dependent Claim 22 words
The process of claim 1 further comprising separating said metastable carbon phases from said reactants and from other products of the reaction.

References Cited (Backward Citations)

US3733394A Cited
US3961103A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-10-14 1984-04-14 1984-10-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-10-14 1988-04-14 1988-10-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-10-14 1992-04-14 1992-10-14 $7700.00 Window Closed / Lapsed

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