Surface passivated semiconductor device and method for producing the same

Claim 2

Surface passivated semiconductor device comprising a semiconductor wafer having a semiconductor surface portion which intersects a pn-junction and an organic passivation layer consisting of a partially fluorinated hydrocarbon polymer which is in contact with and covers said semiconductor surface portion including the intersection of the pn-junction with the semiconductor surface portion, said passivation layer being formed as a continuous coating which is produced by applying directly to the semiconductor surface portion a powder of said polymer which contains predominantly particles of grain size less than 30μ, said powder being melted and then solidified to form the continuous coating.

Claim 3

Semiconductor device as defined in claim 1 wherein the powder coating is composed of a copolymerizate of tetrafluoroethylene and ethylene.

Claim 4

Semiconductor device as defined in claim 1 wherein the passivation layer has a thickness of at least 30μ.

Claim 5

Semiconductor device as defined in claim 1, which includes at least two pn-junctions which intersect semiconductor surface portions, and the passivation layer covers these semiconductor surface portions.

Claim 6

Method for producing a surface passivated semiconductor from a silicon semiconductor device which has been provided with a semiconductor surface portion which intersects a pn-junction and with electrodes and which has been prepared by grinding and etching its semiconductor surface comprising: covering the electrodes with a mask and leaving the semiconductor surface portion unmasked, heating the semiconductor device to slightly more than the melt range of a partially fluorinated hydrocarbon polymer, directly contacting and covering the unmasked semiconductor surface portion of the heated device with a powder of the partially fluorinated hydrocarbon polymer, the powder predominantly containing particles of a grain size less than 30μ, thereafter removing the mask, heating the coating for final cure until a smooth coating is obtained after removing the mask, and then cooling the resulting coating to room temperature.

Claim 7

Method for producing a surface passivated semiconductor from a silicon semiconductor device which has been provided with a semiconductor surface portion which intersects a pn-junction and with electrodes and which has been prepared by grinding and etching its semiconductor surface comprising: covering the electrodes with a mask and leaving the semiconductor surface portion unmasked, heating the semiconductor device to slightly more than the melt range of a partially fluorinated hydrocarbon polymer, directly contacting and covering the unmasked semiconductor surface portion of the heated device with a powder of the partially fluorinated hydrocarbon polymer, the powder predominantly containing particles of a grain size less than 30μ, thereafter removing the mask, heating the coating for final cure until a smooth coating is obtained after removing the mask, and then cooling the resulting coating to room temperature.

Claim 8

Method as defined in claim 5, wherein the semiconductor device includes at least two pn-junctions which intersect semiconductor surface portions, and the passivation layer covers these semiconductor surface portions.

Claim 9

Method as defined in claim 5 wherein the mask is a polytetrafluoroethylene mask.

Claim 10

Method as defined in claim 4, wherein the spraying occurs on a grounded semiconductor device.

Claim 11

Method for producing a surface passivated semiconductor device from an unheated silicon semiconductor device which has been provided with a semiconductor surface portion which intersects a pn-junction and with electrodes and which has been prepared by grinding and etching its semiconductor surface, comprising: covering the electrodes with a mask and leaving the semiconductor surface portion unmasked, elastrostatically spraying a coating of a powder of a partially fluorinated hydrocarbon polymer, the powder predominantly containing particles of a grain size less than 30μ, onto the unmasked semiconductor surface portion of the etched and unheated device to directly contact the semiconductor surface portion with the powder, then removing the mask, heating the coating for final cure until a smooth coating is obtained after the mask is removed, and then cooling the resulting coating to room temperature.

Claim 12

Method for producing a surface passivated semiconductor device from an unheated silicon semiconductor device which has been provided with a semiconductor surface portion which intersects a pn-junction and with electrodes and which has been prepared by grinding and etching its semiconductor surface, comprising: covering the electrodes with a mask and leaving the semiconductor surface portion unmasked, elastrostatically spraying a coating of a powder of a partially fluorinated hydrocarbon polymer, the powder predominantly containing particles of a grain size less than 30μ, onto the unmasked semiconductor surface portion of the etched and unheated device to directly contact the semiconductor surface portion with the powder, then removing the mask, heating the coating for final cure until a smooth coating is obtained after the mask is removed, and then cooling the resulting coating to room temperature.

Claim 13

Method as defined in claim 9, wherein the semiconductor device includes at least two pn-junctions which intersect semiconductor surface portions, and the passivation layer cover these semiconductor surface portions.

Claim 14

Method as defined in claim 9, wherein the mask is a polytetrafluoroethylene mask.