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US4220488A
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Gas-phase process for the production of an epitaxial layer of indum phosphide
Assignee: Thales SA
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Filing: 1979-03-06
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Granted: 1980-09-02
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Expires: 1999-03-06
Abstract
Abstract A process and an apparatus for epitaxy in a gaseous phase, producing thin and homogeneous layers of monocrystalline indium phosphide. The process comprises two steps. In the first step, the phosphine is decomposed in a pyrolysis chamber which extends through a kiln in accordance with the reaction: ##EQU1## Thereafter, in a second step, the phosphorus is reacted with triethylindium in an atmosphere of hydrogen and nitrogen: ##EQU2## The residual gases are drawn off by a vacuum pump.
Inventors
- 👤 Jean-Pascal Duchemin
- 👤 Daniel Leguen
- 👤 Michel Bonnet
- 👤 Francois Koelsch
- 👤 Gerard Beuchet
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:10
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/40; Y; Y10; Y10S; Y10S148/00; Y10S148/059; Y10S148/065
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
110 words
A process for the gas-phase production of an epitaxial layer of indium phosphide which comprises: preforming a gas containing phosphorous vapor by pyrolyzing phosphine in the gas phase at 700° C.-1000° C. according to equation (1): 4 PH.sub.3 →P.sub.4 +6 H.sub.2 ( 1) introducing said preformed gas stream containing phosphorous vapor into a mixing chamber; separately introducing into said chamber a mixture comprising nitrogen, hydrogen, and triethyl indium; thereby reacting said phosphorous in said gas stream with said triethyl indium in said chamber in the presence of a substrate of monocrystalline InP at 350°-700° C., according to equation (2): 3/2 H.sub.2 +1/4 P.sub.4 +In(C.sub.2 H.sub.5).sub.3 →InP+3 C.sub.2 H.sub.6 ( 2).
Claim 2
Dependent Claim
110 words
A process for the gas-phase production of an epitaxial layer of indium phosphide which comprises: preforming a gas containing phosphorous vapor by pyrolyzing phosphine in the gas phase at 700° C.-1000° C. according to equation (1): 4 PH.sub.3 →P.sub.4 +6 H.sub.2 ( 1) introducing said preformed gas stream containing phosphorous vapor into a mixing chamber; separately introducing into said chamber a mixture comprising nitrogen, hydrogen, and triethyl indium; thereby reacting said phosphorous in said gas stream with said triethyl indium in said chamber in the presence of a substrate of monocrystalline InP at 350°-700° C., according to equation (2): 3/2 H.sub.2 +1/4 P.sub.4 +In(C.sub.2 H.sub.5).sub.3 →InP+3 C.sub.2 H.sub.6 ( 2).
Claim 3
Dependent Claim
128 words
A process for the gas phase production of an epitaxial layer of indium phosphide which comprises: preforming a gas stream containing phosphorous vapor by pyrolyzing phosphine in the gas phase at 700° C-1000° C. according to equation (1): 4 PH.sub.3 →P.sub.4 +6 H.sub.2 (1) introducing said preformed gas stream containing phosphorous vapor into a mixing chamber; separately introducing into said chamber a mixture comprising nitrogen, hydrogen, and triethyl indium; thereby reacting said phosphorous in said gas stream with said triethyl indium in said chamber in the presence of a substrate of monocrystalline InP at 350°-700° C., according to equation (2): 3/2 H.sub.2 +1/4 P.sub.4 +In(C.sub.2 H.sub.5).sub.3 →InP+3 C.sub.2 H.sub.6 ( 2) wherein the partial pressure of nitrogen gas is 30-70% of the total pressure of nitrogen and hydrogen.
Claim 4
Dependent Claim
128 words
A process for the gas phase production of an epitaxial layer of indium phosphide which comprises: preforming a gas stream containing phosphorous vapor by pyrolyzing phosphine in the gas phase at 700° C-1000° C. according to equation (1): 4 PH.sub.3 →P.sub.4 +6 H.sub.2 (1) introducing said preformed gas stream containing phosphorous vapor into a mixing chamber; separately introducing into said chamber a mixture comprising nitrogen, hydrogen, and triethyl indium; thereby reacting said phosphorous in said gas stream with said triethyl indium in said chamber in the presence of a substrate of monocrystalline InP at 350°-700° C., according to equation (2): 3/2 H.sub.2 +1/4 P.sub.4 +In(C.sub.2 H.sub.5).sub.3 →InP+3 C.sub.2 H.sub.6 ( 2) wherein the partial pressure of nitrogen gas is 30-70% of the total pressure of nitrogen and hydrogen.
Claim 5
Dependent Claim
28 words
A process as claimed in any of claims 1 or 2 wherein the total mean pressure of the gases and vapors is between 10 Torrs and atmospheric pressure.
Claim 6
Dependent Claim
22 words
A process as claimed in claim 3, wherein the total pressure of the gases and vapour is between 70 and 80 Torrs.
Claim 7
Dependent Claim
19 words
A process as claimed in claim 4, wherein the total mean pressure in the reaction zone is 76 Torrs.
Claim 8
Dependent Claim
77 words
A process as claimed in any of claims 1 or 2, wherein the steps occur in succession in a pyrolysis chamber and an epitaxy chamber of the same reactor, the flow of PH 3 being 1/10 of the flow of principal hydrogen, the flow of triethyl indium being regulated by saturation of an auxiliary current of hydrogen which is 1/5 of the principal hydrogen flow, and the flow of nitrogen being 3/5 of the principal hydrogen flow.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-09-02 | 1984-03-03 | 1984-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-09-02 | 1988-03-03 | 1988-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-09-02 | 1992-03-03 | 1992-09-02 | $7700.00 | Window Closed / Lapsed |