Multidrain metal-oxide-semiconductor field-effect

Claim 2

A multidrain MOS field-effect device comprising: a semiconductor substrate of a determined conductivity type having a major face defining a first implantation plane; a source region included in said first implantation plane and being of the opposite conductivity type to said semiconductor substrate; a plurality of separated drain regions included in said first implantation plane and being of said opposite conductivity type; a single channel region included in said semiconductor substrate of said determined conductivity type, entirely surrounding each of said drain regions and being surrounded by said source region; a thin insulating layer above at least of said channel region; and a second implantation layer composed of polycristalline silicon and defining a single gate region which is above said thin insulating layer and said single channel region; said source region, said plurality of drain regions and said gate region forming a multidrain transistor which has its gate region entirely surrounding over said drain regions and being surrounded over said source region and which comprises a pluraltiy of separated drain electrodes in ohmic contact with said drain regions respectively.

Claim 3

A device according to claim 1 in which said drain regions are identical and are aligned on said first implantation plane, each intermediate drain region and said source region of said inverter multidrain transistor consituting an intermediate metal-oxide-semiconductor type transistor having a width of channel region substantially equal to two thirds of the channel region width of an extremity metal-oxide-semiconductor type transistor comprising an extremity drain region and said source region of said source region of said inverter multidrain transistor, each pair of adjacent drain regions of said inverter multidrain transistor constituting an interconnecting metal-oxide-semiconductor type transistor having a channel region width substantially equal to one third of said channel region width of each said extremity transistor.

Claim 4

A device according to claim 1 in which the integration degree of said inverter multidrain transistor is substantially equal to the maximum integration degree of a given implantation technique whatever the propagation time of said device, and in which the channel region width between said drain region and said source region of said load transistor is determined as a function of the propagation time of said device which is independent of the number of said drain regions of said inverter transistor.

Claim 5

A multidrain MOS field-effect device including an inverter multidrain transistor and a load transistor, at least the drain of said load transistor being connected to the gate of said inverter multidrain transistor, said inverter multidrain transistor comprising: a source region and a plurality of separated drain regions included in a first implanation plane defined by a major face of a semiconductor substrate of a determined conductivity type, said source region and said drain regions being of the opposite conductivity type of said semiconductor substrate; a single channel region included in said semiconductor substrate of said determined conductivity type, entirely surrounding each of said drain regions and being surrounded by said source region; a thin insulating layer above at least of said channel region; and a single gate region composed of polycristalline silicon and forming a second implantation layer which entirely surrounds over said drain region and is surrounded over said source region; said load transistor comprising; a source region included in said first implantation plane and being of said opposite semiconductor type; a drain region included in said first implantation plane, being of said opposite semiconductor type and being in ohmic contact with an extreme portion of said single gate region of said inverter multidrain transistor; and a gate region composed of polycristalline silicon and included in said second implantation layer.

Claim 6

A multidrain MOS field-effect device including an inverter multidrain transistor and a load transistor, at least the drain of said load transistor being connected to the gate of said inverter multidrain transistor, said inverter multidrain transistor comprising: a source region and a plurality of separated drain regions included in a first implanation plane defined by a major face of a semiconductor substrate of a determined conductivity type, said source region and said drain regions being of the opposite conductivity type of said semiconductor substrate; a single channel region included in said semiconductor substrate of said determined conductivity type, entirely surrounding each of said drain regions and being surrounded by said source region; a thin insulating layer above at least of said channel region; and a single gate region composed of polycristalline silicon and forming a second implantation layer which entirely surrounds over said drain region and is surrounded over said source region; said load transistor comprising; a source region included in said first implantation plane and being of said opposite semiconductor type; a drain region included in said first implantation plane, being of said opposite semiconductor type and being in ohmic contact with an extreme portion of said single gate region of said inverter multidrain transistor; and a gate region composed of polycristalline silicon and included in said second implantation layer.

Claim 7

A device according to claim 4 in which said extremity portion of said single gate region of said inverter multidrain transistor is the gate region of said load transistor.

Claim 8

A device according to claim 4 in which the integration degree of said inverter multidrain transistor is substantially equal to the maximum integration degree of a given implantation technique whatever the propagation time of said device, and in which the channel region width between said drain region and said source region of said load transistor is determined as a function of the propagation time of said device which is independent of the number of said drain regions of said inverter transistor.