Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
75 words
An article of manufacture having a configuration for use in a gaseous discharge device and comprising a dielectric material body having surfaces facing in opposite directions, a plurality of spaced electrically conductive elements on one of said surfaces, and on the other of said surfaces a surface deposit containing, as a source of bismuth, an inorganic non-oxide compound of said bismuth, in an amount sufficient to provide uniform operating voltages and minimize aging cycle time.
Claim 2
Dependent Claim
75 words
An article of manufacture having a configuration for use in a gaseous discharge device and comprising a dielectric material body having surfaces facing in opposite directions, a plurality of spaced electrically conductive elements on one of said surfaces, and on the other of said surfaces a surface deposit containing, as a source of bismuth, an inorganic non-oxide compound of said bismuth, in an amount sufficient to provide uniform operating voltages and minimize aging cycle time.
Claim 3
Dependent Claim
18 words
The invention of claim 1 wherein the thickness of said deposit is at least about 100 angstrom units.
Claim 4
Dependent Claim
77 words
The invention of claim 1 wherein said inorganic non-oxide compound of bismuth is selected from the group consisting of bismuth orthoarsenate, bismuth tribromide, bismuth basic carbonate, bismuth tetrachloride, bismuth trichloride, bismuth basic dichromate, bismuth trifluoride, bismuth hydroxide, bismuth iodate, bismuth diiodide, bismuth triiodide, bismuth molybdate, bismuth nitrate, bismuth basic nitrate, bismuth oxybromide, bismuth oxychloride, bismuth oxyfluoride, bismuth oxyiodide, bismuth orthosphosphate, bismuth triselenide, bismuth silicate, bismuth sulfate, bismuth mono-sulfide, bismuth trisulfide, bismuth tellurate, bismuth tritelluride and bismuth vanadate.
Claim 5
Independent Claim
55 words
A method of using a dielectric body in a gaseous discharge device to provide uniform operating voltages and minimize aging cycle time, said body comprising a surface deposit containing, as a source of bismuth, an inorganic non-oxide compound of said bismuth, in an amount sufficient to provide uniform operating voltages and minimize aging cycle time.
Claim 6
Independent Claim
55 words
A method of using a dielectric body in a gaseous discharge device to provide uniform operating voltages and minimize aging cycle time, said body comprising a surface deposit containing, as a source of bismuth, an inorganic non-oxide compound of said bismuth, in an amount sufficient to provide uniform operating voltages and minimize aging cycle time.
Claim 7
Dependent Claim
18 words
The invention of claim 4 wherein the thickness of said deposit is at least about 100 angstrom units.
Claim 8
Dependent Claim
77 words
The invention of claim 4 wherein said inorganic non-oxide compound of bismuth is selected from the group consisting of bismuth orthoarsenate, bismuth tribromide, bismuth basic carbonate, bismuth tetrachloride, bismuth trichloride, bismuth basic dichromate, bismuth trifluoride, bismuth hydroxide, bismuth iodate, bismuth diiodide, bismuth triiodide, bismuth molybdate, bismuth nitrate, bismuth basic nitrate, bismuth oxybromide, bismuth oxychloride, bismuth oxyfluoride, bismuth oxyiodide, bismuth orthosphosphate, bismuth triselenide, bismuth silicate, bismuth sulfate, bismuth mono-sulfide, bismuth trisulfide, bismuth tellurate, bismuth tritelluride and bismuth vanadate.