Patent US4218291A successfully refreshed from Google Patents.
US4218291A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming metal and metal silicide films
Assignee: Fujitsu Ltd
•
Filing: 1979-02-28
•
Granted: 1980-08-19
•
Expires: 1999-02-28
Abstract
Abstract In the past a film of a transition metal silicide or an aluminum silicon alloy has been deposited on a semiconductor substrate by vacuum evaporation and used as an electrode or wiring of a semiconductor device. According to the present invention, the film is produced by a sputtering method wherein the silicon component of the film is not supplied from the target but from a gaseous silicon compound contained in the sputtering atmosphere.
Inventors
- 👤 Toshihiko Fukuyama
- 👤 Shintaro Yanagisawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 03:09
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0057; H10D64/011; H10D64/0111; H10D64/0112
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
47 words
In a process for forming on a substrate a metal film comprising a transition metal silicide or silicides by sputtering a target, the improvement which comprises constituting said target from said transition metal and performing said sputtering in an inert gas atmosphere which contains a silicon hydride.
Claim 2
Dependent Claim
47 words
In a process for forming on a substrate a metal film comprising a transition metal silicide or silicides by sputtering a target, the improvement which comprises constituting said target from said transition metal and performing said sputtering in an inert gas atmosphere which contains a silicon hydride.
Claim 3
Dependent Claim
26 words
A process according to claim 1, wherein said silicon hydride is at least one member selected from the group consisting of monosilane, disilane, dichlorosilane and trichlorosilane.
Claim 4
Dependent Claim
12 words
A process according to claim 2, wherein said silicon hydride is monosilane.
Claim 5
Dependent Claim
33 words
A process according to claim 3, wherein said silicon hydride is contained in said inert gas atmosphere in a proportion of from 10 to 80 volume % based on the total gaseous mixture.
Claim 6
Dependent Claim
27 words
A process according to claim 4, wherein the atomic ratio of silicon relative to the transition metal of said transition metal silicide is from 0.01 to 3.
Claim 7
Dependent Claim
95 words
A process for forming on a substrate a double layer structure by sputtering, said double layer structure comprising a transition metal layer and a transition metal silicide layer, said process comprising the steps of: placing in a sputtering apparatus a target which comprises said transition metal; introducing into said sputtering apparatus an inert gas and a silicon hydride gas; sputtering said target, thereby forming said transition metal silicide layer; terminating the introduction of said silicon hydride gas; introducing an inert gas into said sputtering apparatus; and sputtering said target, thereby forming said transition metal layer.
Claim 8
Dependent Claim
95 words
A process for forming on a substrate a double layer structure by sputtering, said double layer structure comprising a transition metal layer and a transition metal silicide layer, said process comprising the steps of: placing in a sputtering apparatus a target which comprises said transition metal; introducing into said sputtering apparatus an inert gas and a silicon hydride gas; sputtering said target, thereby forming said transition metal silicide layer; terminating the introduction of said silicon hydride gas; introducing an inert gas into said sputtering apparatus; and sputtering said target, thereby forming said transition metal layer.
Claim 9
Dependent Claim
27 words
A process according to claim 6 wherein said silicon hydride gas is at least one member selected from the group consisting of monosilane, disilane, dichlorosilane and trichlorosilane.
Claim 10
Dependent Claim
13 words
A process according to claim 7, wherein said silicon hydride gas is monosilane.
Claim 11
Dependent Claim
34 words
A process according to claim 8, wherein said silicon hydride gas is contained in said inert gas atmosphere in a proportion of from 10 to 80 vol. % based on the total gaseous mixture.
Claim 12
Dependent Claim
27 words
A process according to claim 9, wherein the atomic ratio of silicon relative to the transition metal of said transition metal silicide is from 0.01 to 3.
Claim 13
Dependent Claim
56 words
In a process for forming on a substrate an alloy film composed of mainly aluminum and additionally silicon by sputtering of a target, the improvement which comprises constituting said target from aluminum and performing said sputtering in an inert gas atmosphere which contains a silicon hydride as the source of silicon contained in said alloy film.
Claim 14
Dependent Claim
56 words
In a process for forming on a substrate an alloy film composed of mainly aluminum and additionally silicon by sputtering of a target, the improvement which comprises constituting said target from aluminum and performing said sputtering in an inert gas atmosphere which contains a silicon hydride as the source of silicon contained in said alloy film.
Claim 15
Dependent Claim
27 words
A process according to claim 11, wherein the content of said silicon is in the range of from 0.2 to 20% by weight, based on said alloy.
Claim 16
Dependent Claim
26 words
A process according to claim 12 wherein said silicon hydride is at least one member selected from the group consisting of monosilane, disilane, dichlorosilane and trichlorosilane.
Claim 17
Dependent Claim
12 words
A process according to claim 13, wherein siad silicon hydride is monosilane.
Claim 18
Dependent Claim
35 words
A process according to claim 13 or 14, wherein said silicon hydride is contained in said inert gas atmosphere in a proportion of from 1 to 40 volume % based on the total gaseous mixture.
Claim 19
Dependent Claim
90 words
A process for forming on a substrate a double layer structure by sputtering, said double layer structure comprising an upper aluminum layer and a lower aluminum silicon alloy layer, said process comprising the steps of: placing in a sputtering apparatus a target which comprises said aluminum; introducing into said sputtering apparatus an inert gas and a silicon hydride gas; sputtering said target, thereby forming said aluminum silicon alloy layer; terminating the introduction of said silicon hydride gas into said sputtering apparatus, and; sputtering said target, thereby forming said aluminum layer.
Claim 20
Dependent Claim
90 words
A process for forming on a substrate a double layer structure by sputtering, said double layer structure comprising an upper aluminum layer and a lower aluminum silicon alloy layer, said process comprising the steps of: placing in a sputtering apparatus a target which comprises said aluminum; introducing into said sputtering apparatus an inert gas and a silicon hydride gas; sputtering said target, thereby forming said aluminum silicon alloy layer; terminating the introduction of said silicon hydride gas into said sputtering apparatus, and; sputtering said target, thereby forming said aluminum layer.
Claim 21
Dependent Claim
27 words
A process according to claim 16, wherein said silicon hydride gas is at least one member selected from the group consisting of monosilane, disilane, dichlorosilane and trichlorosilane.
Claim 22
Dependent Claim
13 words
A process according to claim 17, wherein said silicon hydride gas is monosilane.
Claim 23
Dependent Claim
83 words
A process for forming a double layer structure on a substrate by sputtering, said double layer structure comprising a transition metal layer and a transition metal silicide layer, said process comprising the steps of: placing in a sputtering apparatus a target which comprises said transition metal; introducing into said sputtering apparatus an inert gas; sputtering said target, thereby forming said transition metal layer; introducing into said sputtering apparatus a silicon hydride gas; and sputtering said target, thereby forming said transition metal silicide layer.
Claim 24
Dependent Claim
83 words
A process for forming a double layer structure on a substrate by sputtering, said double layer structure comprising a transition metal layer and a transition metal silicide layer, said process comprising the steps of: placing in a sputtering apparatus a target which comprises said transition metal; introducing into said sputtering apparatus an inert gas; sputtering said target, thereby forming said transition metal layer; introducing into said sputtering apparatus a silicon hydride gas; and sputtering said target, thereby forming said transition metal silicide layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-08-19 | 1984-02-18 | 1984-08-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-08-19 | 1988-02-18 | 1988-08-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-08-19 | 1992-02-18 | 1992-08-19 | $7700.00 | Window Closed / Lapsed |