Lateral semiconductor diac

Claim 1

A semiconductor diac comprising: a semiconductor body including layers of five alternating opposite semiconductor conductivity types, said central interior layer having a first conductivity type and having two adjacent layers of said second conductivity type on opposite sides thereof, an appreciable integral single region of said second conductivity type extending through one edge of said central interior layer and integrally connecting said two adjacent layers of said second conductivity type to form a structure including said appreciable integral single region and said two adjacent layers of said second conductivity type having a substantially U-shaped cross-sectional shape to define a gate drive region interior of said semiconductor body adjacent said edge of said central interior layer and within said appreciable integral single region, a first electrode contacting an exterior surface of a first exterior layer of said semiconductor body having said first conducting type, and a second electrode contacting an exterior surface of a second exterior of said semiconductor body layer having said first conductivity type, said first and second electrodes providing a two electrode diac, wherein said two electrode diac is responsive to a predetermined breakover voltage means supplied from a voltage supply source and applied across said electrodes to allow appreciable current flow through said gate drive region to appear as date drive current to cause said two electrode diac to become conductive and to break back to a negative resistance characteristic.