US4206471A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor storage element and a process for the production thereof
Assignee: Siemens AG
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Filing: 1978-09-18
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Granted: 1980-06-03
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Expires: 1998-09-18
Abstract
Abstract A semiconductor storage element is disclosed having a storage capacitor whose storage electrode is arranged above a doped semiconductor layer. The storage electrode is formed of a portion of a strip-like reference potential line which is separated from the semiconductor layer by a thin insulating layer. A transfer gate is also provided adjacent to the storage electrode which is formed from a portion of a strip-like word line likewise separated from the semiconductor layer by a thinner insulating layer. An oppositely doped zone is arranged at a surface of the semiconductor layer and serves as a bit line. The word line and the reference potential line run parallel to one another and are arranged directly adjacent to one another. When a potential is connected to the transfer gate, the bit line doped zone may be selectively conductively connected to the storage zone. The reference potential line for one group of the storage elements can be also used as a word line for another group of the storage elements.
Inventors
- 👤 Kurt Hoffmann
- 👤 Reiner Sigusch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:34
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/35; G11C11/40; G11C11/401; G11C11/403; Y; Y10; Y10S; Y10S257/00; Y10S257/92
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
227 words
A semiconductor storage element system, comprising: (a) a plurality of storage elements, each storage element having a storage capacitor, a transfer gate, a word line, a bit line, and a reference potential line; (b) a doped semiconductor layer of first conductivity type having a storage zone for the storage capacitor in the semiconductor layer and at a surface thereof, a bit line zone of second conductivity type also being provided in the semiconductor layer at the surface thereof; (c) an insulating layer on the surface of the semiconductor layer with the word line and reference potential line arranged in strip-like fashion thereon; (d) a storage electrode of the storage capacitor arranged above the storage zone and being formed of a portion of the reference potential line which is separated by a thinner insulating layer from the semiconductor layer; (e) the transfer gate being positioned adjacent the storage electrode and being formed of a portion of the word line which is separated from the semiconductor layer by a thinner insulating layer; (f) said transfer gate comprising means for selectively conductively coupling the bit line zone to the storage capacitor storage zone when a given potential is applied to the transfer gate; and (g) the word line and reference potential line running parallel and being arranged directly adjacent to one another and at right angles to the bit line.
Claim 2
Dependent Claim
227 words
A semiconductor storage element system, comprising: (a) a plurality of storage elements, each storage element having a storage capacitor, a transfer gate, a word line, a bit line, and a reference potential line; (b) a doped semiconductor layer of first conductivity type having a storage zone for the storage capacitor in the semiconductor layer and at a surface thereof, a bit line zone of second conductivity type also being provided in the semiconductor layer at the surface thereof; (c) an insulating layer on the surface of the semiconductor layer with the word line and reference potential line arranged in strip-like fashion thereon; (d) a storage electrode of the storage capacitor arranged above the storage zone and being formed of a portion of the reference potential line which is separated by a thinner insulating layer from the semiconductor layer; (e) the transfer gate being positioned adjacent the storage electrode and being formed of a portion of the word line which is separated from the semiconductor layer by a thinner insulating layer; (f) said transfer gate comprising means for selectively conductively coupling the bit line zone to the storage capacitor storage zone when a given potential is applied to the transfer gate; and (g) the word line and reference potential line running parallel and being arranged directly adjacent to one another and at right angles to the bit line.
Claim 3
Dependent Claim
25 words
A storage element system as claimed in claim 1 in which the word line and the reference potential line overlap one another at their edges.
Claim 4
Dependent Claim
26 words
A storage element system as claimed in claim 1 in which the storage zone is formed by a doped surface-side semiconductor zone of second conductivity type.
Claim 5
Dependent Claim
19 words
A storage element system as claimed in claim 1 in which the storage zone comprises an inversion edge layer.
Claim 6
Dependent Claim
84 words
A storage element system as claimed in claim 1 wherein the plurality of storage elements are all provided on the same semiconductor layer, that a first group of the storage elements is assigned a common, surface-side strip-like semiconductor zone of second conductivity type as the bit line, word lines of a second group of storage elements being combined to form a common word line, and reference potential lines of the second group of storage elements being combined to form a common reference potential line.
Claim 7
Dependent Claim
54 words
A storage element system as claimed in claim 5 in which common reference potential lines of the second group of storage elements having means for selective disconnection from a reference potential to permit the reference potential lines following this disconnection to function as a common word line for a third group of storage elements.
Claim 8
Dependent Claim
25 words
A storage element system as claimed in claim 1 in which the strip-like word line comprises a highly doped semiconductor material formed of polycrystalline silicon.
Claim 9
Dependent Claim
26 words
A storage element system as claimed in claim 1 in which the strip-like reference potential line comprises a highly doped semiconductor material formed of polycrystalline silicon.
Claim 10
Independent Claim
218 words
A method for the production of a storage element having a storage capacitor with a storage electrode transfer gate, word line, reference potential line, and bit line, comprising: (a) coating a doped semiconductor layer with an insulating layer; (b) providing openings in the insulating layer through which a surface side semiconductor zone of doping conductivity opposite to the semiconductor layer is formed in the semiconductor layer by doping; (c) again providing a closed insulating layer on the semiconductor layer and then providing an opening in the insulating layer which corresponds to a region of the transfer gate and of the capacitor storage electrode; (d) coating the semiconductor layer within this opening with a thin insulating layer and then applying a first, electrically conductive coating to an entire surface of the insulating layer and thin insulating layer; (e) removing by masked etching steps portions of the conductive coating until only parts which form the storage electrode and the reference potential line remain; (f) applying another insulating layer which covers the remaining parts of the first conductive coating and then applying a second electrically conductive coating to the entire surface of another insulating layer; and (g) removing portions of the second coating by masked etching steps until only parts thereof remain which form the transfer gate and the word line.
Claim 11
Independent Claim
218 words
A method for the production of a storage element having a storage capacitor with a storage electrode transfer gate, word line, reference potential line, and bit line, comprising: (a) coating a doped semiconductor layer with an insulating layer; (b) providing openings in the insulating layer through which a surface side semiconductor zone of doping conductivity opposite to the semiconductor layer is formed in the semiconductor layer by doping; (c) again providing a closed insulating layer on the semiconductor layer and then providing an opening in the insulating layer which corresponds to a region of the transfer gate and of the capacitor storage electrode; (d) coating the semiconductor layer within this opening with a thin insulating layer and then applying a first, electrically conductive coating to an entire surface of the insulating layer and thin insulating layer; (e) removing by masked etching steps portions of the conductive coating until only parts which form the storage electrode and the reference potential line remain; (f) applying another insulating layer which covers the remaining parts of the first conductive coating and then applying a second electrically conductive coating to the entire surface of another insulating layer; and (g) removing portions of the second coating by masked etching steps until only parts thereof remain which form the transfer gate and the word line.
Claim 12
Independent Claim
221 words
A method for the production of a storage element having a storage capacitor with a storage electrode transfer gate, word line, reference potential line, and but line, comprising the steps of: (a) coating a doped semiconductor layer with an insulating layer; (b) providing openings in the insulating layer through which a surface side semiconductor zone of doping conductivity opposite to the semiconductor layer is formed in the semiconductor layer by doping; (c) again providing a closed insulating layer on the semiconductor layer and then providing an opening in the insulating layer which corresponds to a region of the transfer gate and of the capacitor storage electrode; (d) coating the semiconductor layer within this opening with a thin insulating layer and then applying a first, electrically conductive coating to an entire surface of the insulating layer and thin insulating layer; (e) removing by masked etching steps portions of the conductive coating until only parts which form the transfer gate and the word line remain; (f) applying another insulating layer which covers the remaining parts of the first conductive coating and then applying a second electrically conductive coating to the entire surface of another insulating layer; and (g) removing portions of the second coating by masked etching steps until only parts thereof remain which form the storage electrode and the reference potential line.
Claim 13
Independent Claim
221 words
A method for the production of a storage element having a storage capacitor with a storage electrode transfer gate, word line, reference potential line, and but line, comprising the steps of: (a) coating a doped semiconductor layer with an insulating layer; (b) providing openings in the insulating layer through which a surface side semiconductor zone of doping conductivity opposite to the semiconductor layer is formed in the semiconductor layer by doping; (c) again providing a closed insulating layer on the semiconductor layer and then providing an opening in the insulating layer which corresponds to a region of the transfer gate and of the capacitor storage electrode; (d) coating the semiconductor layer within this opening with a thin insulating layer and then applying a first, electrically conductive coating to an entire surface of the insulating layer and thin insulating layer; (e) removing by masked etching steps portions of the conductive coating until only parts which form the transfer gate and the word line remain; (f) applying another insulating layer which covers the remaining parts of the first conductive coating and then applying a second electrically conductive coating to the entire surface of another insulating layer; and (g) removing portions of the second coating by masked etching steps until only parts thereof remain which form the storage electrode and the reference potential line.
Claim 14
Dependent Claim
224 words
A semiconductor storage element system comprising: (a) a plurality of storage elements, bit lines, reference potential lines, and word lines, each storage element having a storage capacitor and transfer gate associated therewith; (b) a doped semiconductor layer of first conductivity type having storage zones for the storage capacitor and strip-like bit line zones of second conductivity type in the semiconductor layer and at a surface thereof (c) an insulating layer on the surface of the semiconductor layer with word lines and reference potential lines running parallel with one another on the insulating layer and at right angles to the bit line zones, edge portions of the word lines overlapping and being insulated from edge portions of the reference potential lines; (d) a storage electrode of the storage capacitor arranged above the storage zone and being formed of a portion of the reference potential line which is separated by a thin portion of the insulating layer from the semiconductor layer; (e) the transfer gate being positioned alongside the storage electrode and being formed of a portion of the word line which is separated from the semiconductor layer by a thinner portion of the insulating layer; and (f) said transfer gate comprising means for selectively conductively coupling the bit line zone to the storage capacitor zone when a given potential is applied to the transfer gate.
Claim 15
Dependent Claim
224 words
A semiconductor storage element system comprising: (a) a plurality of storage elements, bit lines, reference potential lines, and word lines, each storage element having a storage capacitor and transfer gate associated therewith; (b) a doped semiconductor layer of first conductivity type having storage zones for the storage capacitor and strip-like bit line zones of second conductivity type in the semiconductor layer and at a surface thereof (c) an insulating layer on the surface of the semiconductor layer with word lines and reference potential lines running parallel with one another on the insulating layer and at right angles to the bit line zones, edge portions of the word lines overlapping and being insulated from edge portions of the reference potential lines; (d) a storage electrode of the storage capacitor arranged above the storage zone and being formed of a portion of the reference potential line which is separated by a thin portion of the insulating layer from the semiconductor layer; (e) the transfer gate being positioned alongside the storage electrode and being formed of a portion of the word line which is separated from the semiconductor layer by a thinner portion of the insulating layer; and (f) said transfer gate comprising means for selectively conductively coupling the bit line zone to the storage capacitor zone when a given potential is applied to the transfer gate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-06-03 | 1983-12-03 | 1984-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-06-03 | 1987-12-03 | 1988-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-06-03 | 1991-12-03 | 1992-06-03 | $7700.00 | Window Closed / Lapsed |