Patent US4204218A successfully refreshed from Google Patents.
US4204218A
Expired / Lapsed
US
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Support structure for thin semiconductor wafer
Assignee: AT&T Inc
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Filing: 1978-03-01
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Granted: 1980-05-20
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Expires: 1998-03-01
Abstract
Abstract Semiconductor chips for certain types of devices must be extremely thin, typically less than two mils in thickness. They are therefore extremely fragile and difficult to handle. Such chips are provided with increased strength and rigidity by the addition of a deposited metal frame member on one surface of the chip encompassing the electrode pattern. The frame member has a thickness several times that of the electrode pattern.
Inventors
- 👤 William M. Fox
- 👤 Michael A. Novotny
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:52
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/6875
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
108 words
A semiconductor device comprising a semiconductor chip having two opposed, substantially parallel major surfaces, said chip having a thickness of less than about two mils and having a conductive electrode pattern on one major surface thereof, said conductive electrode pattern having a thickness dimension above said one major surface CHARACTERIZED IN THAT said one major surface includes a metal frame member encompassing said conductive electrode pattern and having a thickness of at least about twice the thickness of said pattern above said surface, said metal frame member constituting a support element providing mechanical strength and rigidity for said chip and having no electrical function relative to said device.
Claim 2
Dependent Claim
108 words
A semiconductor device comprising a semiconductor chip having two opposed, substantially parallel major surfaces, said chip having a thickness of less than about two mils and having a conductive electrode pattern on one major surface thereof, said conductive electrode pattern having a thickness dimension above said one major surface CHARACTERIZED IN THAT said one major surface includes a metal frame member encompassing said conductive electrode pattern and having a thickness of at least about twice the thickness of said pattern above said surface, said metal frame member constituting a support element providing mechanical strength and rigidity for said chip and having no electrical function relative to said device.
Claim 3
Dependent Claim
21 words
A semiconductor device in accordance with claim 1 in which said frame member comprises a deposited metal strip of uniform width.
Claim 4
Dependent Claim
19 words
A semiconductor device in accordance with claim 1 in which said frame member adjoins the periphery of said chip.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-20 | 1983-11-19 | 1984-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-20 | 1987-11-19 | 1988-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-20 | 1991-11-19 | 1992-05-20 | $7700.00 | Window Closed / Lapsed |