US4202003A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MESFET Semiconductor device and method of making
Assignee: Texas Instruments Inc
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Filing: 1978-04-21
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Granted: 1980-05-06
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Expires: 1998-04-21
Abstract
Abstract A MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a method which consists of an implanted channel stopper underneath a thick field oxide, implanted source and drain regions, depletion and enhancement mode device channel implants, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.
Inventors
- 👤 Henry M. Darley
- 👤 Theodore W. Houston
- 👤 Han T. Yuan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:18
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/80; H10D30/87; H10D30/0612; H10D30/0614; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/64; H10P; H10P76/00; H10P76/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
213 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; first, second, and third current carrying electrodes of the opposite conductivity type in surface adjacent regions of said substrate; a first high resistivity region of said opposite conductivity type in a surface adjacent region of said substrate and between and contiguous with at least one perimeter portion of said first and second current carrying electrodes; a second high resistivity region of said opposite conductivity type in a surface adjacent region of said substrate and between and contiguous with at least one perimeter portion of said second and third carrying electrodes; a thick dielectric region in said substrate surrounding said device; a heavily doped region of said first conductivity type lying below and in contact with said thick dielectric region; a metal silicide region formed in each of said current carrying electrodes at least one perimeter portion of each metal silicide region lying contiguous with at least one perimeter portion of said thick dielectric region; a metal silicide region in each of said first and second high resistivity regions, the ends of said metal silicide regions in said high resistivity regions lying contiguous with a perimeter portion of said thick dielectric region, said metal silicide regions creating metal-semiconductor junctions as control elements.
Claim 2
Dependent Claim
213 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; first, second, and third current carrying electrodes of the opposite conductivity type in surface adjacent regions of said substrate; a first high resistivity region of said opposite conductivity type in a surface adjacent region of said substrate and between and contiguous with at least one perimeter portion of said first and second current carrying electrodes; a second high resistivity region of said opposite conductivity type in a surface adjacent region of said substrate and between and contiguous with at least one perimeter portion of said second and third carrying electrodes; a thick dielectric region in said substrate surrounding said device; a heavily doped region of said first conductivity type lying below and in contact with said thick dielectric region; a metal silicide region formed in each of said current carrying electrodes at least one perimeter portion of each metal silicide region lying contiguous with at least one perimeter portion of said thick dielectric region; a metal silicide region in each of said first and second high resistivity regions, the ends of said metal silicide regions in said high resistivity regions lying contiguous with a perimeter portion of said thick dielectric region, said metal silicide regions creating metal-semiconductor junctions as control elements.
Claim 3
Dependent Claim
14 words
A device according to claim 1 wherein said thick dielectric region is silicon dioxide.
Claim 4
Dependent Claim
14 words
A device according to claim 2 wherein said metal silicide regions are platinum silicide.
Claim 5
Dependent Claim
28 words
A device according to claim 3 including first and second dielectric layers deposited upon and covering said device and having apertures for contacts to said metal silicide regions.
Claim 6
Dependent Claim
16 words
A device according to claim 4 further including a metallization system covering said metal silicide regions.
Claim 7
Dependent Claim
24 words
A device according to claim 5 wherein said metallization system is composed of a first layer of titanium-tungsten and a second layer of aluminum.
Claim 8
Dependent Claim
22 words
A device according to claim 4 wherein said first dielectric layer is silicon nitride and said second dielectric layer is silicon dioxide.
References Cited (Backward Citations)
US4104672A
Cited
US4139786A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-05-06 | 1983-11-05 | 1984-05-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-05-06 | 1987-11-05 | 1988-05-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-05-06 | 1991-11-05 | 1992-05-06 | $7700.00 | Window Closed / Lapsed |