Closed-loop sputtering system and method of operating same

Claim 2

A closed-loop sputtering system for the deposition of a thin film of material from a target cathode onto a substrate, which system comprises in combination: (a) a D.C. power source to apply a constant current or voltage; (b) a sputtering work chamber containing therein a target cathode, a substrate and an anode, the electrodes spaced apart and adapted to form in operation a plasma of an ionized gas therebetween; (c) a means to maintain the work chamber under a vacuum and to discharge exhaust gas from the work chamber in operation; (d) a source of gas for use in forming the plasma; (e) gas conduit means to conduct the gas from said source to the work chamber to form the plasma; (f) electrically controlled gas-flow valve means in the conduit means, the valve means to control the flow of gas therethrough in proportion to the application of an electrical error signal to the valve means; (g) first electrical-communication means to provide for electrical communication between the D.C. power source and the cathode, so as to provide a constant current or voltage to the target cathode; and (h) control means in direct nonbiased electrical communication with the target cathode and with the gas-flow valve means, said control means comparing the target voltage or current signal which varies with the ionization level of the plasma in the work chamber with a reference voltage or current signal and generating a differential electrical-error-control signal to control and drive the valve means, whereby the ionization level of the plasma is controlled by variations in the flow of gas without the necessity of a pressure-sensing device in the work chamber.

Claim 3

The system of claim 1 wherein the power source is a DC-constant-current-power source and wherein the valve-control means compares the target-electrode-voltage signal with a reference-voltage signal to provide an error-control-voltage signal to the valve means.

Claim 4

The system of claim 1 wherein the means to maintain the vacuum chamber under vacuum comprises a vacuum pump to maintain the chamber at a pressure below about 5 microns.

Claim 5

The system of claim 1 wherein the source of gas comprises inert gas, reactive gases or combinations thereof.

Claim 6

The system of claim 1 wherein the valve means comprises a piezoelectric-leak valve.

Claim 7

The system of claim 1 wherein the target electrode is composed of a metal, metal alloy or a metal oxide.

Claim 8

The system of claim 2 wherein the control means comprises in combination a high-voltage divider to reduce the target voltage from the target cathode, a reference-voltage generator to provide a reference voltage, a differential amplifier to compare the divider-target voltage and the reference voltage as it generates an error signal, and a valve-driver circuit to receive the error signal and to control the flow of the gas to the plasma through variations in the valve means, whereby the valve means is opened and whereby, on receipt of an error-control signal from the valve-driver circuit, the valve means is open to admit additional gas from said source to the plasma, wherein the plasma is maintained in a steady state through a valve opening sufficient to permit the plasma to hold the target voltage at the desired constant level.

Claim 9

The system of claim 7 which includes, between the differential amplifier and the valve-driver circuit, an integrator circuit to integrate the error-control signal received from the differential amplifier and to integrate the signal to control variations in the operation of the valve means.

Claim 10

A closed-loop sputtering system for the deposition of a thin film of material from a target cathode onto a substrate, which system comprises in combination: (a) a DC-constant-current-power source; (b) a sputtering work chamber containing therein a metal, metal alloy or metal-oxide target-cathode, a substrate and an anode, the electrodes spaced apart to form in operation a plasma of an ionized gas therebetween; (c) a pump means to maintain the work chamber under a vacuum at a level above the base pressure for the operation of the plasma and to discharge exhaust gas from the work chamber in operation; (d) a gas supply, wherein the gas comprises argon, other inert gases, reactive gases or combinations thereof, for use in forming the plasma; (e) a gas-conduit means to conduct the gas from the gas supply to the work chamber to form the plasma; (f) a piezoelectric-leak valve in the gas-conduit means to control the flow of gas therethrough in proportion to the application of an electrical-error-voltage signal to the piezoelectric-leak valve; (g) a target-voltage line to provide direct, nonbiased, electrical communication between the DC-constant-current source and the target cathode, so as to provide a constant current to the target-cathode; (h) a power-servo gas-pressure-control means in electrical communication with the target cathode and with the piezoelectric valve to compare the target voltage with a reference-voltage signal and to generate a differential electrical-voltage-control signal to drive the piezoelectric valve, which means comprises: (i) a high-voltage divider to reduce the target voltage from the target cathode, (ii) a reference-voltage generator to provide a reference voltage, (iii) a differential amplifier to compare the divider-target voltage and the reference voltage as it generates an error signal; and (i) an integrator circuit between the differential amplifier and the valve-driver circuit to integrate the error-control signal received from the differential amplifier and to control variations in the operation of the piezoelectric-leak valve, whereby the target cathode potential is monitored by the differential amplifier to detect changes in the ionization level of the plasma and whereby the error signal of the differential amplifier is processed by the integrator and used to control the ionization level of the plasma by variations in the flow of gas through the piezoelectric-leak valve without the necessity of a pressure-sensing device in the work chamber.

Claim 11

A closed-loop sputtering system for the deposition of a thin film of material from a target cathode onto a substrate, which system comprises in combination: (a) a DC-constant-current-power source; (b) a sputtering work chamber containing therein a metal, metal alloy or metal-oxide target-cathode, a substrate and an anode, the electrodes spaced apart to form in operation a plasma of an ionized gas therebetween; (c) a pump means to maintain the work chamber under a vacuum at a level above the base pressure for the operation of the plasma and to discharge exhaust gas from the work chamber in operation; (d) a gas supply, wherein the gas comprises argon, other inert gases, reactive gases or combinations thereof, for use in forming the plasma; (e) a gas-conduit means to conduct the gas from the gas supply to the work chamber to form the plasma; (f) a piezoelectric-leak valve in the gas-conduit means to control the flow of gas therethrough in proportion to the application of an electrical-error-voltage signal to the piezoelectric-leak valve; (g) a target-voltage line to provide direct, nonbiased, electrical communication between the DC-constant-current source and the target cathode, so as to provide a constant current to the target-cathode; (h) a power-servo gas-pressure-control means in electrical communication with the target cathode and with the piezoelectric valve to compare the target voltage with a reference-voltage signal and to generate a differential electrical-voltage-control signal to drive the piezoelectric valve, which means comprises: (i) a high-voltage divider to reduce the target voltage from the target cathode, (ii) a reference-voltage generator to provide a reference voltage, (iii) a differential amplifier to compare the divider-target voltage and the reference voltage as it generates an error signal; and (i) an integrator circuit between the differential amplifier and the valve-driver circuit to integrate the error-control signal received from the differential amplifier and to control variations in the operation of the piezoelectric-leak valve, whereby the target cathode potential is monitored by the differential amplifier to detect changes in the ionization level of the plasma and whereby the error signal of the differential amplifier is processed by the integrator and used to control the ionization level of the plasma by variations in the flow of gas through the piezoelectric-leak valve without the necessity of a pressure-sensing device in the work chamber.

Claim 14

The method of claim 10 wherein the ionizable gas comprises inert gas, reactive gases or combinations thereof.

Claim 15

The method of claim 10 wherein the work chamber is maintained under a vacuum of from about 1 to 10 microns.

Claim 16

The method of claim 10 wherein the target electrode is composed of a metal, metal alloy or metal oxide to be deposited on the substrate.

Claim 17

The method of claim 10 wherein the power source is a DC-constant-current source, which method comprises comparing the voltage of the target cathode to a reference voltage to generate a voltage-error signal, whereby control of the gas maintains the target voltage constant.

Claim 18

The method of claim 14 wherein the flow of the gas to the plasma is controlled through the employment of a piezoelectric-leak valve, the valve opening and closing in proportional response to the electrical voltage-error signal.

Claim 19

The method of claim 10 wherein control of the flow of the gases includes reducing the variable current or voltage from the target cathode by a suitable divider, comparing the divided voltage or current with a suitable reference voltage or current generated, and amplifying the difference to generate an error-control electrical signal for driving a piezoelectric-leak valve.