US4199731A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reversable electrically alterable amplifier configurations
Assignee: Harris Corp
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Filing: 1978-12-27
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Granted: 1980-04-22
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Expires: 1998-12-27
Abstract
Abstract An amplifier for use as on the output buffer for semiconductor memories including an amorphous element added to a push-pull configuration to allow conversion between push-pull and open collector nonvolatile configurations by electrically altering the impedence of the amorphous element.
Inventors
- 👤 David L. Taylor
- 👤 Stephen A. Harris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 05:37
CPC Classifications
H; H03; H03K; H03K5/00; H03K5/01; H03K5/02; G; G11; G11C; G11C7/00; G11C7/10; G11C7/1051; G11C7/1057; H03F; H03F3/00; H03F3/20; H03F3/21; H03F3/213; H03F3/30; H03F3/3083; H03F3/3086; H03F3/3096
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
58 words
In a push-pull amplifier having phase splitting means, a first transistor means in an emitter follower configuration and a second transistor means in a common emitter configuration, the improvement comprising: amorphous material means in said first transistor means, electrically alterable between high and low impedance states, for converting said amplifier between a push-pull and open collector nonvolatile configurations.
Claim 2
Dependent Claim
58 words
In a push-pull amplifier having phase splitting means, a first transistor means in an emitter follower configuration and a second transistor means in a common emitter configuration, the improvement comprising: amorphous material means in said first transistor means, electrically alterable between high and low impedance states, for converting said amplifier between a push-pull and open collector nonvolatile configurations.
Claim 3
Dependent Claim
21 words
The amplifier according to claim 1 wherein said amorphous material means is in the emitter circuit of said first transistor means.
Claim 4
Dependent Claim
15 words
The amplifier according to claim 2 wherein said first transistor means includes a Darlington amplifier.
Claim 5
Dependent Claim
29 words
The amplifier according to claim 3 including a Zener diode in the collector circuit of said Darlington amplifier for use during the electrical alteration of said amorphous material means.
Claim 6
Dependent Claim
33 words
The amplifier according to claim 1 wherein said first transistor means include a Darlington amplifier and said amorphous material means is in the base circuit of the output transistors of said Darlington amplifier.
Claim 7
Dependent Claim
72 words
In a semiconductor memory having an output buffer which includes a preamplifier, a phase splitter and an output amplifier, the improvement being said output amplifier which comprises: first transistor means in an emitter follower configuration; second transistor means in a common emitter configuration; and amorphous material means in said first transistor means, electrically alterable between high and low impedance states, for converting said output amplifier between push-pull and open collector nonvolatile configurations.
Claim 8
Dependent Claim
72 words
In a semiconductor memory having an output buffer which includes a preamplifier, a phase splitter and an output amplifier, the improvement being said output amplifier which comprises: first transistor means in an emitter follower configuration; second transistor means in a common emitter configuration; and amorphous material means in said first transistor means, electrically alterable between high and low impedance states, for converting said output amplifier between push-pull and open collector nonvolatile configurations.
Claim 9
Dependent Claim
57 words
The semiconductor memory according to claim 6 wherein said amorphous material semiconductor means is in the emitter circuit of said first transistor means such that applying a current signal to the output of the output amplifier and increasing the collector voltage electrically alters the impedance state of the amorphous material means to convert said output amplifier configuration.
Claim 10
Dependent Claim
35 words
The semiconductor memory according to claim 6 wherein said first transistor means includes a Darlington amplifier and wherein said amorphous material means is in the base circuit of the output transistor of said Darlington amplifier.
Claim 11
Independent Claim
93 words
A method of programming an amplifier configuration comprising the steps of: connecting a first transistor means in an emitter follower configuration; connecting a second transistor means in a common emitter configurations; interconnecting said first and second transistor means in a push-pull configuration; and connecting an amorphous material means, electrically alterable between high and low resistance states, to said first transistor means for causing said amplifier to be in either a push-pull or open collector configuration and being electrically alterable to convert said amplifier to the other of said push-pull or open collector configurations.
Claim 12
Independent Claim
93 words
A method of programming an amplifier configuration comprising the steps of: connecting a first transistor means in an emitter follower configuration; connecting a second transistor means in a common emitter configurations; interconnecting said first and second transistor means in a push-pull configuration; and connecting an amorphous material means, electrically alterable between high and low resistance states, to said first transistor means for causing said amplifier to be in either a push-pull or open collector configuration and being electrically alterable to convert said amplifier to the other of said push-pull or open collector configurations.
Claim 13
Dependent Claim
32 words
The method of claim 9 including the step of electrically altering by creating a voltage across and current through said amorphous material means to alter its electrical characteristics to a nonvolatile state.
Claim 14
Dependent Claim
42 words
The method of claim 10 wherein said electrically altering step includes increasing biasing voltage of said amplifier and applying a current to the output of said amplifier sufficiently to alter the electrical characteristics of said amorphous material means to a nonvolatile state.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-22 | 1983-10-22 | 1984-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-22 | 1987-10-22 | 1988-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-22 | 1991-10-22 | 1992-04-22 | $7700.00 | Window Closed / Lapsed |