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US4193044A
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Rare earth semiconductor laser
Assignee: United States Department of the Army
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Filing: 1978-01-26
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Granted: 1980-03-11
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Expires: 1998-01-26
Abstract
Abstract A rare earth semiconductor laser is disclosed comprising a semiconductor erial of the type Ln 2 TX 5 where Ln is a rare earth element, T is zirconium or hafnium, and X is sulfur or selenium. The semiconductor contains neodymium as a dopant rare earth ion and can be made to lase by applying an electric voltage.
Inventors
- 👤 Clyde A. Morrison
- 👤 Nick Karayianis
- 👤 Donald E. Wortman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:43
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S3/00; H01S3/14; H01S3/16; H01S3/1688; H01S5/305; H01S5/3068
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
139 words
A solid state laser device comprising: a semiconductor material constituting a single crystal containing optically active ions with given energy levels; said semiconductor material having the formula Ln 2 TX 5 , where Ln is a rare earth element, T is zirconium or hafnium, and X is sulfur or selenium; regeneration means exhibiting high reflectance at given wavelengths optically coupled to opposite end portions of the crystal for stimulating coherent emission of light from the crystal; and electrical pumping means coupled to the crystal for effecting an inverted population state of the optically active ions between certain ones of the given energy levels by impact excitation, where stimulated emission is emitted from the crystal at a frequency corresponding to the energy difference between the certain ones of the given energy levels and at wavelengths corresponding to the given wavelengths.
Claim 2
Dependent Claim
139 words
A solid state laser device comprising: a semiconductor material constituting a single crystal containing optically active ions with given energy levels; said semiconductor material having the formula Ln 2 TX 5 , where Ln is a rare earth element, T is zirconium or hafnium, and X is sulfur or selenium; regeneration means exhibiting high reflectance at given wavelengths optically coupled to opposite end portions of the crystal for stimulating coherent emission of light from the crystal; and electrical pumping means coupled to the crystal for effecting an inverted population state of the optically active ions between certain ones of the given energy levels by impact excitation, where stimulated emission is emitted from the crystal at a frequency corresponding to the energy difference between the certain ones of the given energy levels and at wavelengths corresponding to the given wavelengths.
Claim 3
Dependent Claim
26 words
The solid state laser device cited in claim 1 wherein the electrical energy pumping means includes: means for connecting the crystal across an external voltage source.
Claim 4
Dependent Claim
27 words
The solid state laser device recited in claim 2 wherein the voltage source connecting means includes: a pair of electrodes disposed on lateral surfaces of the crystal.
Claim 5
Dependent Claim
20 words
The solid state laser device recited in claim 3 including: Q-switching means disposed between the regeneration means and the crystal.
Claim 6
Dependent Claim
19 words
The solid state laser device recited in claim 3 wherein the optically active ion is a rare earth ion.
Claim 7
Dependent Claim
25 words
The solid state laser device recited in claim 5 wherein the electrical pumping means includes: means for connecting the crystal across an external voltage source.
Claim 8
Dependent Claim
16 words
The solid state laser device recited in claim 3 wherein the optically active ion is neodymium.
Claim 9
Dependent Claim
27 words
The solid state laser device recited in claim 7 wherein the voltage source connecting means includes: a pair of electrodes disposed on lateral surfaces of the crystal.
Claim 10
Dependent Claim
33 words
A single crystal laser material whose chemical structure is expressed by the generals formula Ln 2-z Nd z TX 5 (0<z≦2) where: Ln=a rare earth element Nd=neodymium T=zirconium or hafnium X=sulfur or selenium.
Claim 11
Dependent Claim
33 words
A single crystal laser material whose chemical structure is expressed by the generals formula Ln 2-z Nd z TX 5 (0<z≦2) where: Ln=a rare earth element Nd=neodymium T=zirconium or hafnium X=sulfur or selenium.
References Cited (Backward Citations)
US3354406A
Cited
US3833862A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-03-11 | 1983-09-10 | 1984-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-03-11 | 1987-09-10 | 1988-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-03-11 | 1991-09-10 | 1992-03-11 | $7700.00 | Window Closed / Lapsed |