Low noise CCD input circuit

Claim 2

In an input circuit for a CCD which includes a substrate: an input region in the substrate of opposite conductivity than the substrate; a gate region of the substrate adjacent to the input region; a storage region of the substrate adjacent to the gate region; means including electrodes over said gate and storage regions, a signal source coupled between said electrodes, and a bias voltage source connected to said electrode over said gate region, for producing a shallower potential well in said gate region than in said storage region; and means for filling said potential well beneath said electrode over said storage region comprising means for applying a voltage to said input region for causing the same to emit charge carriers which pass through said shallower well to the potential well in said storage region, the improvement comprising: means responsive to the bias voltage applied to said electrode over said gate region for maintaining said input region at a substantially fixed potential offset greater than zero from said electrode over said gate region during the period said potential well of said storage region is being filled.

Claim 3

In a charge coupled circuit which includes a semiconductor substrate, source electrode means in the substrate, storage electrode means insulated from the substrate, and gate electrode means insulated from the substrate and located between the storage electrode means and said source electrode means for controlling the flow of charge between the source electrode means and the substrate region beneath the storage electrode means in combination: means coupled to said gate electrode means and to said storage electrode means, including means for applying between said gate electrode means and said storage electrode means a signal potential which may vary, and means supplying a bias potential, for creating a first potential well beneath the storage electrode means and a shallower second potential well beneath the gate electrode means; means for creating a potential difference between said source electrode means and said storage electrode means during a first time period, for causing a flow of charge from said source electrode means to said first potential well in an amount independent of said signal potential, said means including means responsive to that portion of said bias potential which is applied to said gate electrode means for clamping said source electrode means at a fixed offset voltage relative to the voltage at said gate electrode means; and means for changing the potential difference between said storage electrode means and said source electrode means, during a second time period following the first in a sense to return charge from the potential well beneath said storage electrode means to said source electrode means to an extent to leave stored beneath said storage electrode means an amount of charge dependent on said signal potential.

Claim 4

In a charge coupled circuit which includes a semiconductor substrate, source electrode means in the substrate, storage electrode means insulated from the substrate, and gate electrode means insulated from the substrate and located between the storage electrode means and said source electrode means for controlling the flow of charge between the source electrode means and the substrate region beneath the storage electrode means in combination: means coupled to said gate electrode means and to said storage electrode means, including means for applying between said gate electrode means and said storage electrode means a signal potential which may vary, and means supplying a bias potential, for creating a first potential well beneath the storage electrode means and a shallower second potential well beneath the gate electrode means; means for creating a potential difference between said source electrode means and said storage electrode means during a first time period, for causing a flow of charge from said source electrode means to said first potential well in an amount independent of said signal potential, said means including means responsive to that portion of said bias potential which is applied to said gate electrode means for clamping said source electrode means at a fixed offset voltage relative to the voltage at said gate electrode means; and means for changing the potential difference between said storage electrode means and said source electrode means, during a second time period following the first in a sense to return charge from the potential well beneath said storage electrode means to said source electrode means to an extent to leave stored beneath said storage electrode means an amount of charge dependent on said signal potential.

Claim 5

In an input circuit for a CCD which includes a substrate: an input region in the substrate of opposite conductivity than the substrate; a gate region of the substrate adjacent to the input region; a storage region of the substrate adjacent to the gate region; means including electrodes over said gate and storage regions, a signal source coupled between said electrodes, and a bias voltage source connected to said electrode over said gate region, for producing a shallower potential well in said gate region than in said storage region; and means for filling said potential well beneath said electrode over said storage region comprising means for applying a voltage to said input region for causing the same to emit charge carriers which pass through said shallower well to the potential well in said storage region, the improvement comprising: means responsive to the bias voltage applied to said electrode over said gate region for maintaining said input region at a substantially fixed potential offset greater than zero from said electrode over said gate region during the period said potential well of said storage region is being filled, said means responsive to said bias voltage comprising a field effect transistor integrated onto the same substrate as said CCD and having source, drain and gate electrodes, connected at its gate electrode to said bias voltage source at its source electrode to said input region and at its drain electrode to a terminal for an operating voltage, said voltage applied to said input region for causing the same to emit charge carriers comprising a voltage of a sense and amplitude to cause conduction through said transistor.

Claim 6

In an input circuit for a CCD which includes a substrate: an input region in the substrate of opposite conductivity than the substrate; a gate region of the substrate adjacent to the input region; a storage region of the substrate adjacent to the gate region; means including electrodes over said gate and storage regions, a signal source coupled between said electrodes, and a bias voltage source connected to said electrode over said gate region, for producing a shallower potential well in said gate region than in said storage region; and means for filling said potential well beneath said electrode over said storage region comprising means for applying a voltage to said input region for causing the same to emit charge carriers which pass through said shallower well to the potential well in said storage region, the improvement comprising: means responsive to the bias voltage applied to said electrode over said gate region for maintaining said input region at a substantially fixed potential offset greater than zero from said electrode over said gate region during the period said potential well of said storage region is being filled, said means responsive to said bias voltage comprising a field effect transistor integrated onto the same substrate as said CCD and having source, drain and gate electrodes, connected at its gate electrode to said bias voltage source at its source electrode to said input region and at its drain electrode to a terminal for an operating voltage, said voltage applied to said input region for causing the same to emit charge carriers comprising a voltage of a sense and amplitude to cause conduction through said transistor.

Claim 7

In an input circuit as set forth in claim 3, said means for applying a voltage to said input region comprising a current source, that is, a source exhibiting a substantial internal resistance.

Claim 8

In an input circuit as set forth in claim 3, said means for applying a voltage to said input region comprising a field effect transistor inverter including a second field effect transistor having source, drain and control electrodes, connected at its source electrode to a point at a reference potential, an impedance, said second transistor coupled at its drain electrode through said impedance to said operating voltage terminal, means coupling said drain electrode of said second transistor to said input region, and means for applying a turn-on pulse to said gate electrode of said second transistor.

Claim 9

In a charge coupled circuit which includes a semiconductor substrate, source electrode means in the substrate, storage electrode means insulated from the substrate, and gate electrode means insulated from the substrate and located between the storage electrode means and said source electrode means for controlling the flow of charge between the source electrode means and the substrate region beneath the storage electrode means, in combination: means coupled to said gate electrode means and to said storage electrode means, including means for applying between said gate electrode means and said storage electrode means a signal potential which may vary, and means supplying a bias potential, for creating a first potential well beneath the storage electrode means and a shallower second potential well beneath the gate electrode means; means for creating a potential difference between said source electrode means and said storage electrode means during a first time period, for causing a flow of charge from said source electrode means to said first potential well in an amount independent of said signal potential, said means including means for clamping said source electrode means at a fixed offset voltage relative to the voltage at said gate electrode means; means for changing the potential difference between said storage electrode means and said source electrode means, during a second time period following the first in a sense to return charge from the potential well beneath said storage electrode means to said source electrode means to an extent to leave stored beneath said storage electrode means an amount of charge dependent on said signal potential; and said means for clamping comprising a semiconductor device of the type which exhibits between two of its electrodes, when it conducts, a voltage (V T +ΔV) where V T is independent of the magnitude of current conducted through said device and ΔV is a function of said magnitude, said device being connected at one electrode to said source electrode means and at said other electrode to said gate electrode means, and means for driving said device into conduction.

Claim 10

In a charge coupled circuit which includes a semiconductor substrate, source electrode means in the substrate, storage electrode means insulated from the substrate, and gate electrode means insulated from the substrate and located between the storage electrode means and said source electrode means for controlling the flow of charge between the source electrode means and the substrate region beneath the storage electrode means, in combination: means coupled to said gate electrode means and to said storage electrode means, including means for applying between said gate electrode means and said storage electrode means a signal potential which may vary, and means supplying a bias potential, for creating a first potential well beneath the storage electrode means and a shallower second potential well beneath the gate electrode means; means for creating a potential difference between said source electrode means and said storage electrode means during a first time period, for causing a flow of charge from said source electrode means to said first potential well in an amount independent of said signal potential, said means including means for clamping said source electrode means at a fixed offset voltage relative to the voltage at said gate electrode means; means for changing the potential difference between said storage electrode means and said source electrode means, during a second time period following the first in a sense to return charge from the potential well beneath said storage electrode means to said source electrode means to an extent to leave stored beneath said storage electrode means an amount of charge dependent on said signal potential; and said means for clamping comprising a semiconductor device of the type which exhibits between two of its electrodes, when it conducts, a voltage (V T +ΔV) where V T is independent of the magnitude of current conducted through said device and ΔV is a function of said magnitude, said device being connected at one electrode to said source electrode means and at said other electrode to said gate electrode means, and means for driving said device into conduction.

Claim 11

In a charge coupled circuit as set forth in claim 6, said semiconductor device comprising a MOS transistor having source, drain and gate electrodes, connected at its gate electrode to said gate electrode means and at its source electrode to said source electrode means, and connected at its drain electrode to a terminal for an operating voltage.