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US4190458A Expired / Lapsed US ⏱️ 0.0 years remaining

Metal-silica solution for forming films on semiconductor surfaces

Assignee: Optron Inc
•
Filing: 1978-03-27
•
Granted: 1980-02-26
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Expires: 1998-03-27
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Abstract

Abstract An improved method for forming a metal-silica coating solution having particular utility in the formation of metal-organo-silicate films on semiconductor surfaces is disclosed. The method comprises the steps of forming a mixture of a first solution having a metal salt and a cross-linking agent dissolved therein and a second solution having an organo-silicate dissolved therein, and aging the mixture a predetermined length of time. This mixture can then be applied to the semiconductor surface where cross-linking takes place such that a viable film is formed. Further heating of the semi-conductor device causes a metal film to be formed which is in turn diffused into the semiconductor device. By the use of the metal-silica solution, an improved method for diffusing metal atoms into silicon for lifetime control is achieved.

Inventors

  • 👤 Raymond DiBugnara

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 15:32
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/19; C; C30; C30B; C30B31/00; C30B31/02; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; Y; Y10; Y10S; Y10S252/00; Y10S252/95

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 67 words
A partially cross-linked metal chloro-silicate solution for coating semicondutor devices and the like produced by the steps of: (a) forming a mixture of: (i) a first alcohol solution of a platinum chloride and a chloride-ion producing cross-linking agent for tetraethylorthosilicate, and (ii) a second alcohol solution of tetraethylorthosilicate; and (b) aging said mixture a predetermined length of time so as to form a partially cross-linked tetraethylorthosilicate composition.
Claim 2
Dependent Claim 67 words
A partially cross-linked metal chloro-silicate solution for coating semicondutor devices and the like produced by the steps of: (a) forming a mixture of: (i) a first alcohol solution of a platinum chloride and a chloride-ion producing cross-linking agent for tetraethylorthosilicate, and (ii) a second alcohol solution of tetraethylorthosilicate; and (b) aging said mixture a predetermined length of time so as to form a partially cross-linked tetraethylorthosilicate composition.
Claim 3
Dependent Claim 12 words
The solution of claim 1 wherein said cross-linking agent is hydrochloric acid.
Claim 4
Dependent Claim 41 words
The solution of claim 2 wherein the alcohol in the first alcohol solution is a mixture of ethyl alcohol, methyl alcohol and isopropyl alcohol, and the alcohol in the second alcohol solution is a mixture of ethyl alcohol and isopropyl alcohol.
Claim 5
Dependent Claim 16 words
The solution of claim 1 wherein said mixture is aged a minimum of approximately two hours.
Claim 6
Dependent Claim 20 words
The solution of claim 1 wherein the first and second alcohol solutions are mixed in approximately equal amounts by volume.

References Cited (Backward Citations)

US3915766A Cited
US3997501A Cited
US4014703A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-02-25 1983-08-27 1984-02-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-02-25 1987-08-27 1988-02-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-02-25 1991-08-27 1992-02-26 $7700.00 Window Closed / Lapsed

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