Patent US4189682A successfully refreshed from Google Patents.
US4189682A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave FET power circuit
Assignee: RCA Corp
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Filing: 1978-07-24
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Granted: 1980-02-19
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Expires: 1998-07-24
Abstract
Abstract A field effect transistor (FET) is comprised of a plurality of unit transistors having a common gallium arsenide substrate with an N-type active region. Each unit transistor is comprised of a unit gate, a unit drain and a unit source. The FET is mounted in a flip-chip carrier that connects all of the unit sources together to form a first electrode of the FET. Additionally, the first electrode is connected to ground by the carrier. All of the unit drains are connected together on the substrate to form a second electrode of the FET. The FET is reverse biased to cause a current to flow from the first electrode to the second electrode, whereby the first and second electrodes are a drain and a source, respectively, of the FET.
Inventors
- 👤 Franco N. Sechi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:27
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/60; H03F3/608
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
207 words
A reflection amplifier that includes a three-port circulator with first and second ports thereof adapted for connection to a signal source and a load, respectively, the improvement comprising: a field effect transistor including pluralities of unit sources, unit drains and unit gates disposed upon a semiconductor substrate; electrically conductive material plated on each of said unit sources, said plated material on each of said unit sources having a surface with a displacement from said substrate greater than the maximum displacement of said unit gates and said unit drains from said substrate; a heat sink connecting said surfaces of said plated unit sources to ground; means for applying a bias voltage to said transistor for causing a higher interelectrode capacitance between said unit gates and said unit drains than between said unit gates and said plated unit sources, said unit gates, unit sources, and unit drains being connected to form a gate electrode, a drain electrode and a source electrode, respectively, of said transistor; and an impedance connected to said drain and source electrodes so that said transistor causes a reflection coefficient greater than unity at an input port connected to said gate and drains electrodes, said input port being connected to said third port of said circulator.
Claim 2
Dependent Claim
207 words
A reflection amplifier that includes a three-port circulator with first and second ports thereof adapted for connection to a signal source and a load, respectively, the improvement comprising: a field effect transistor including pluralities of unit sources, unit drains and unit gates disposed upon a semiconductor substrate; electrically conductive material plated on each of said unit sources, said plated material on each of said unit sources having a surface with a displacement from said substrate greater than the maximum displacement of said unit gates and said unit drains from said substrate; a heat sink connecting said surfaces of said plated unit sources to ground; means for applying a bias voltage to said transistor for causing a higher interelectrode capacitance between said unit gates and said unit drains than between said unit gates and said plated unit sources, said unit gates, unit sources, and unit drains being connected to form a gate electrode, a drain electrode and a source electrode, respectively, of said transistor; and an impedance connected to said drain and source electrodes so that said transistor causes a reflection coefficient greater than unity at an input port connected to said gate and drains electrodes, said input port being connected to said third port of said circulator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-18 | 1983-08-20 | 1984-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-18 | 1987-08-20 | 1988-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-18 | 1991-08-20 | 1992-02-19 | $7700.00 | Window Closed / Lapsed |