Patent US4184933A successfully refreshed from Google Patents.
US4184933A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating two level interconnects and fuse on an IC
Assignee: Harris Corp
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Filing: 1978-11-29
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Granted: 1980-01-22
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Expires: 1998-11-29
Abstract
Abstract A method of forming fuses and two level interconnects including applying a layer of fusible material on an insulating layer and through contact apertures, cleaning said fusible layer by sputter etching, applying a layer of metallic material by sputtering, selectively patterning the metallic layer to form a top layer of contacts and interconnects and selectively patterning the fusible layer to form fusible elements and to form a bottom layer of contacts and interconnects.
Inventors
- 👤 William R. Morcom
- 👤 Kenneth A. Berry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
103 words
A method of fabricating fuse elements and metallic contacts in an integrated circuit having an insulating layer on a substrate and contact apertures in said insulating layer comprising: nonselectively applying a layer of fusible material; nonselectively sputter etching said layer of fusible material to clean the surface of said layer of fusible material; applying a layer of metallic material at a temperature below the hillock formation threshold of the metallic material; selectively removing portions of said layer of metallic material to define a top layer of contacts and interconnects; and selectively removing portions of said layer of fusible material to define fuse elements.
Claim 2
Independent Claim
103 words
A method of fabricating fuse elements and metallic contacts in an integrated circuit having an insulating layer on a substrate and contact apertures in said insulating layer comprising: nonselectively applying a layer of fusible material; nonselectively sputter etching said layer of fusible material to clean the surface of said layer of fusible material; applying a layer of metallic material at a temperature below the hillock formation threshold of the metallic material; selectively removing portions of said layer of metallic material to define a top layer of contacts and interconnects; and selectively removing portions of said layer of fusible material to define fuse elements.
Claim 3
Dependent Claim
23 words
The method of fabrication according to claim 1 including sputter etching to clean said contact apertures before applying said layer of fusible material.
Claim 4
Dependent Claim
26 words
The method of fabrication according to claim 1 wherein said layer of fusible material is chosen from the group consisting of nichrome, platinum silicide, and chrome.
Claim 5
Dependent Claim
27 words
The method according to claim 1 wherein said layer of metallic material is chosen from the group consisting of aluminum, silicon doped aluminum, and copper doped aluminum.
Claim 6
Dependent Claim
19 words
The method according to claim 1 wherein said sputter etch is performed at an energy level below 400 watts.
Claim 7
Dependent Claim
18 words
The method according to claim 1 wherein said layers of fusible and metallic materials are applied by sputtering.
Claim 8
Dependent Claim
24 words
The method according to claim 1 wherein said layer of fusible material is nichrome and said layer of metallic material is silicon doped aluminum.
Claim 9
Dependent Claim
27 words
The method according to claim 1 wherein both of said removing steps include forming masks on said substrate and etching to remove portions of the appropriate layer.
Claim 10
Independent Claim
85 words
A method of fabricating fuses and metallic contacts for an integrated circuit having an insulating layer thereon and contact apertures in said insulating layer comprising: sputter etching said contact apertures; applying a layer of fusible material; sputter etching said layer of fusible material to clean the surface thereof; applying a layer of metallic material by sputtering; selectively removing portions of said layer of metallic material to define a first layer of contacts; selectively removing portions of said layer of fusible material to define fusible elements.
Claim 11
Independent Claim
85 words
A method of fabricating fuses and metallic contacts for an integrated circuit having an insulating layer thereon and contact apertures in said insulating layer comprising: sputter etching said contact apertures; applying a layer of fusible material; sputter etching said layer of fusible material to clean the surface thereof; applying a layer of metallic material by sputtering; selectively removing portions of said layer of metallic material to define a first layer of contacts; selectively removing portions of said layer of fusible material to define fusible elements.
Claim 12
Dependent Claim
23 words
The method according to claim 9 wherein said layer of fusible material is chosen from the group consisting of nichrome and platinum silicide.
Claim 13
Dependent Claim
27 words
The method according to claim 9 wherein said layer of metallic material is chosen from the group consisting of aluminum, silicon doped aluminum, and copper doped aluminum.
Claim 14
Dependent Claim
20 words
The method according to claim 9 wherein said fusible material is sputter etched at an energy level below 400 watts.
Claim 15
Dependent Claim
29 words
The method according to claim 9 wherein said selectively removing said layers of metallic and fusible materials also forms a first and second layer, respectively, of contacts and interconnects.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-21 | 1983-07-23 | 1984-01-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-21 | 1987-07-23 | 1988-01-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-21 | 1991-07-23 | 1992-01-22 | $7700.00 | Window Closed / Lapsed |