Patent US4183039A successfully refreshed from Google Patents.
US4183039A
Expired / Lapsed
US
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Light emitting semiconductor device
Assignee: Hitachi Ltd
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Filing: 1978-06-06
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Granted: 1980-01-08
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Expires: 1998-06-06
Abstract
Abstract A light emitting semiconductor device wherein a p-n junction is defined by a ditch and wherein the ditch either extends to a low resistance layer or is away from the low resistance layer at most 1/2 of the width of the ditch is disclosed. It has the merit that the near field pattern is much more uniform than in a prior-art device.
Inventors
- 👤 Masaaki Aoki
- 👤 Yuichi Ono
- 👤 Makoto Morioka
- 👤 Kazuhiro Ito
- 👤 Mitshiuro Mori
- 👤 Kazuhiro Kurata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:13
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
114 words
A light emitting semiconductor device comprising a p-n junction which is made up of semiconductor layers of first and second conductivity types, a low-resistance semiconductor layer which adjoins the first conductivity type semiconductor layer and which contains large quantities of impurity of said first conductivity type therein, a semiconductor layer for giving out light which adjoins said low-resistance semiconductor layer and which has said first conductivity type, and a ditch which is provided from a surface of said second conductivity type semiconductor layer in a manner to surround said p-n junction, a distance between a bottom of said ditch and said low-resistance semiconductor layer being at most 1/2 of a width of said ditch.
Claim 2
Dependent Claim
114 words
A light emitting semiconductor device comprising a p-n junction which is made up of semiconductor layers of first and second conductivity types, a low-resistance semiconductor layer which adjoins the first conductivity type semiconductor layer and which contains large quantities of impurity of said first conductivity type therein, a semiconductor layer for giving out light which adjoins said low-resistance semiconductor layer and which has said first conductivity type, and a ditch which is provided from a surface of said second conductivity type semiconductor layer in a manner to surround said p-n junction, a distance between a bottom of said ditch and said low-resistance semiconductor layer being at most 1/2 of a width of said ditch.
Claim 3
Dependent Claim
44 words
A light emitting semiconductor device according to claim 1, wherein a surface of said semiconductor layer for giving out light is substantially semispherical, and a positive electrode and a negative electrode are formed on the surface on an identical side of the semiconductor body.
Claim 4
Dependent Claim
25 words
A light emitting semiconductor device according to claim 2, wherein said first conductivity type is the p-type, while said second conductivity type is the n-type.
Claim 5
Dependent Claim
20 words
A light emitting semiconductor device according to claim 2, wherein said bottom of said ditch reaches said low-resistance semiconductor layer.
Claim 6
Dependent Claim
23 words
A light emitting semiconductor device according to claim 2, wherein said bottom of said ditch lies in said first conductivity type semiconductor layer.
Claim 7
Dependent Claim
22 words
A light emitting semiconductor device according to claim 1, wherein a surface of said semiconductor layer for giving out light is flat.
Claim 8
Dependent Claim
25 words
A light emitting semiconductor device according to claim 6, wherein said first conductivity type is the p-type, while said second conductivity type is the n-type.
Claim 9
Dependent Claim
20 words
A light emitting semiconductor device according to claim 6, wherein said bottom of said ditch reaches said low-resistance semiconductor layer.
Claim 10
Dependent Claim
23 words
A light emitting semiconductor device according to claim 6, wherein said bottom of said ditch lies in said first conductivity type semiconductor layer.
Claim 11
Dependent Claim
47 words
A light emitting semiconductor device according to claim 6, further comprising a first electrode having a first potential coupled to said flat surface of said semiconductor layer for giving out light, and a second electrode having a second potential coupled to said second conductivity type semiconductor layer.
Claim 12
Dependent Claim
25 words
A light emitting semiconductor device according to claim 10, wherein said first potential is a positive potential, and said second potential is a negative potential.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-01-07 | 1983-07-09 | 1984-01-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-01-07 | 1987-07-09 | 1988-01-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-01-07 | 1991-07-09 | 1992-01-08 | $7700.00 | Window Closed / Lapsed |