High fluorescent efficiency zinc oxide crystals and method of making same

Claim 1

A method of treating a high purity single crystal of zinc oxide characterized by a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating the crystal in the presence of a donor-providing material selected from the group consisting of Zn, ZnS, CdS, S, In 2 O 3 , In(NO 3 ) 3 , Ga and H 2 for a time and at a temperature sufficient to allow homogeneous and uniform diffusion throughout the crystal of a concentration of donors sufficient to compensate said acceptor concentration but not exceeding 20 parts per million, thereafter rapidly cooling said crystal to keep substantially all of the uniformly diffused donors homogeneously distributed in the interior of the crystal, followed by removing a thin outer layer of said rapidly cooled crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.

Claim 2

A method of treating a high purity single crystal of zinc oxide characterized by a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating the crystal in the presence of a donor-providing material selected from the group consisting of Zn, ZnS, CdS, S, In 2 O 3 , In(NO 3 ) 3 , Ga and H 2 for a time and at a temperature sufficient to allow homogeneous and uniform diffusion throughout the crystal of a concentration of donors sufficient to compensate said acceptor concentration but not exceeding 20 parts per million, thereafter rapidly cooling said crystal to keep substantially all of the uniformly diffused donors homogeneously distributed in the interior of the crystal, followed by removing a thin outer layer of said rapidly cooled crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.

Claim 4

A method of solid state doping a zinc oxide single crystal having a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating said zinc oxide crystal together with zinc sulfide powder to a predetermined temperature between 850° C. and 1500° C., for a time sufficient to allow homogeneous diffusion of zinc throughout the crystal; quenching said heated crystal to room temperature, and removing a thin outer layer from said crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.

Claim 5

A method of solid state doping a zinc oxide single crystal having a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating said zinc oxide crystal together with zinc sulfide powder to a predetermined temperature between 850° C. and 1500° C., for a time sufficient to allow homogeneous diffusion of zinc throughout the crystal; quenching said heated crystal to room temperature, and removing a thin outer layer from said crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.