US4181627A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High fluorescent efficiency zinc oxide crystals and method of making same
Assignee: 3M Co
•
Filing: 1975-02-19
•
Granted: 1980-01-01
•
Expires: 1995-02-19
Abstract
Abstract Single crystals of zinc oxide which efficiently fluoresce in the near UV due to the radiative recombination of free excitons. Increased efficiency is attributed to treatment of the crystals to optimize the concentration of free excitons by providing donors to compensate an as-grown concentration of acceptors of less than 10 parts per million.
Inventors
- 👤 Richard L. Weiher
- 👤 Gerhard W. Voll
- 👤 Kjell I. Hagemark
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:28
CPC Classifications
C; C09; C09K; C09K11/00; C09K11/08; C09K11/56; C09K11/562; C09K11/565; C30; C30B; C30B29/00; C30B29/10; C30B29/16; C30B31/00; C30B31/06
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
178 words
A method of treating a high purity single crystal of zinc oxide characterized by a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating the crystal in the presence of a donor-providing material selected from the group consisting of Zn, ZnS, CdS, S, In 2 O 3 , In(NO 3 ) 3 , Ga and H 2 for a time and at a temperature sufficient to allow homogeneous and uniform diffusion throughout the crystal of a concentration of donors sufficient to compensate said acceptor concentration but not exceeding 20 parts per million, thereafter rapidly cooling said crystal to keep substantially all of the uniformly diffused donors homogeneously distributed in the interior of the crystal, followed by removing a thin outer layer of said rapidly cooled crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.
Claim 2
Independent Claim
178 words
A method of treating a high purity single crystal of zinc oxide characterized by a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating the crystal in the presence of a donor-providing material selected from the group consisting of Zn, ZnS, CdS, S, In 2 O 3 , In(NO 3 ) 3 , Ga and H 2 for a time and at a temperature sufficient to allow homogeneous and uniform diffusion throughout the crystal of a concentration of donors sufficient to compensate said acceptor concentration but not exceeding 20 parts per million, thereafter rapidly cooling said crystal to keep substantially all of the uniformly diffused donors homogeneously distributed in the interior of the crystal, followed by removing a thin outer layer of said rapidly cooled crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.
Claim 3
Dependent Claim
23 words
A method according to claim 1, wherein said removing comprises mechanically polishing a surface of the crystal followed by etching the polished surface.
Claim 4
Independent Claim
122 words
A method of solid state doping a zinc oxide single crystal having a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating said zinc oxide crystal together with zinc sulfide powder to a predetermined temperature between 850° C. and 1500° C., for a time sufficient to allow homogeneous diffusion of zinc throughout the crystal; quenching said heated crystal to room temperature, and removing a thin outer layer from said crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.
Claim 5
Independent Claim
122 words
A method of solid state doping a zinc oxide single crystal having a minimum dimension of at least 0.1 mm and having a concentration of acceptors less than about 10 parts per million, which method comprises heating said zinc oxide crystal together with zinc sulfide powder to a predetermined temperature between 850° C. and 1500° C., for a time sufficient to allow homogeneous diffusion of zinc throughout the crystal; quenching said heated crystal to room temperature, and removing a thin outer layer from said crystal to give the crystal a high external fluorescent efficiency in the near ultraviolet of at least 0.001 when measured at 77° K. and to enable said crystal to exhibit uniform fluorescence in the interior of the crystal.
Claim 6
Dependent Claim
45 words
A method according to claim 3, comprising heating a said zinc oxide crystal having a thickness of about 2 millimeters together with a quantity of zinc sulfide powder in a covered crucible to a predetermined temperature of about 1000° C. for at least 3 hours.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-31 | 1983-07-02 | 1984-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-31 | 1987-07-02 | 1988-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-31 | 1991-07-02 | 1992-01-01 | $7700.00 | Window Closed / Lapsed |