Eutectic die attachment method for integrated circuits

Claim 1

A method for attaching a die to a microcircuit supporting surface, in which the die comprises one of sapphire, silicon-on-sapphire, quartz and Spinel material and the surface comprises gold material which materials are not readily bondable and alloyable to and with each other, comprising the steps of selecting additional silicon and gold-silicon matter which are respectively adherable with the die and alloyable with the surface, placing the silicon matter on the die, and bonding the die and the surface together through the intermediary of the gold-silicon matter.

Claim 2

A method for attaching a die to a microcircuit supporting surface, in which the die comprises one of sapphire, silicon-on-sapphire, quartz and Spinel material and the surface comprises gold material which materials are not readily bondable and alloyable to and with each other, comprising the steps of selecting additional silicon and gold-silicon matter which are respectively adherable with the die and alloyable with the surface, placing the silicon matter on the die, and bonding the die and the surface together through the intermediary of the gold-silicon matter.

Claim 3

A method for forming and attaching a die to a surface in a microcircuit package comprising the steps of: cleaning a processed integrated circuit wafer, which has a plurality of electrical circuits adjacent one surface thereof in which each circuit is capable of performing an electrical function, for removing any contaminants therefrom; drying the cleansed wafer in an atmosphere which is non-reactive to the wafer; placing silicon on a second surface of the wafer; electrically testing the electrical circuits for determining the operability thereof; separating the wafer into individual die corresponding to operable ones of the electrical circuits; cleaning the die and the package for removing any contaminants therefrom; heating the package in an atmosphere which is nonreactive thereto and to the die; placing a gold-silicon preform on the package and melting the preform in the heat of said heating step; and placing the die on the preform with the silicon surface in contact therewith and pressing the die to the package for obtaining a gold-silicon alloy bond between the die and the package.

Claim 4

A method for forming and attaching a die to a surface in a microcircuit package comprising the steps of: cleaning a processed integrated circuit wafer, which has a plurality of electrical circuits adjacent one surface thereof in which each circuit is capable of performing an electrical function, for removing any contaminants therefrom; drying the cleansed wafer in an atmosphere which is non-reactive to the wafer; placing silicon on a second surface of the wafer; electrically testing the electrical circuits for determining the operability thereof; separating the wafer into individual die corresponding to operable ones of the electrical circuits; cleaning the die and the package for removing any contaminants therefrom; heating the package in an atmosphere which is nonreactive thereto and to the die; placing a gold-silicon preform on the package and melting the preform in the heat of said heating step; and placing the die on the preform with the silicon surface in contact therewith and pressing the die to the package for obtaining a gold-silicon alloy bond between the die and the package.

Claim 10

A method for attaching sapphire to a gold pad in a ceramic package comprising the steps of placing silicon onto the ground backside of a silicon-on-sapphire wafer, separating the wafer into die, and attaching the die to the gold pad through the intermediary of a gold-silicon preform.

Claim 11

A method for attaching sapphire to a gold pad in a ceramic package comprising the steps of placing silicon onto the ground backside of a silicon-on-sapphire wafer, separating the wafer into die, and attaching the die to the gold pad through the intermediary of a gold-silicon preform.