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US4180749A Expired / Lapsed US ⏱️ 0.0 years remaining

Input buffer for integrated injection logic circuits

Assignee: Texas Instruments Inc
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Filing: 1977-07-18
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Granted: 1979-12-25
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Expires: 1997-07-18
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Abstract

Abstract An input buffer gate for integrated injection logic (I 2 L) circuits, including a multiple-collector transistor wherein a first collector is electrically common with the base thereof, a second (Schottky) collector is connected to receive an input signal, and a third collector which drives internal I 2 L gates. The buffer has a high input breakdown voltage, virtually no input capacitance, power-up/power-down capability at logic "1" and virtually no input current at logic "0", very low storage time, and an input "1" threshold of about 0.5 volts.

Inventors

  • 👤 Benjamin J. Sloan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 10:13
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/0175; H03K19/018; H03K19/01806; H03K19/01818; H10; H10D; H10D84/00; H10D84/60; H10D84/65

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 74 words
A circuit for achieving compatibility between first and second systems operating at different voltage levels, comprising an inverted multiple-collector transistor wherein a first collector thereof is electrically common with the base thereof, a second collector including a Schottky barrier is connected to receive a relatively high-voltage signal from said first system, and a third collector is connected as the input to a second system and provides a lower-voltage signal compatible with said second system.
Claim 2
Dependent Claim 74 words
A circuit for achieving compatibility between first and second systems operating at different voltage levels, comprising an inverted multiple-collector transistor wherein a first collector thereof is electrically common with the base thereof, a second collector including a Schottky barrier is connected to receive a relatively high-voltage signal from said first system, and a third collector is connected as the input to a second system and provides a lower-voltage signal compatible with said second system.
Claim 3
Dependent Claim 19 words
A circuit as in claim 1 further including forward-biased rectifying means in the input line to said second collector.
Claim 4
Dependent Claim 14 words
A circuit as in claim 1 wherein said second collector is a metal-semiconductor barrier.
Claim 5
Dependent Claim 22 words
A circuit as in claim 1 wherein the area of the second collector is about three times that of the third collector.
Claim 6
Dependent Claim 103 words
An integrated circuit comprising an inverted, multiple-collector transistor and a complementary lateral transistor, the emitter of the former being electrically common with the base of the latter, and the collector of the latter being common with the base of the former, said multiple collectors including a first collector coupled to the base of the inverted transistor, a second collector comprising a Schottky barrier, coupled to receive a relatively high voltage input signal, and a third collector coupled to an integrated injection logic system as an input thereto, whereby the degree of saturation of the Schottky collector controls the gain of the other collectors.
Claim 7
Dependent Claim 103 words
An integrated circuit comprising an inverted, multiple-collector transistor and a complementary lateral transistor, the emitter of the former being electrically common with the base of the latter, and the collector of the latter being common with the base of the former, said multiple collectors including a first collector coupled to the base of the inverted transistor, a second collector comprising a Schottky barrier, coupled to receive a relatively high voltage input signal, and a third collector coupled to an integrated injection logic system as an input thereto, whereby the degree of saturation of the Schottky collector controls the gain of the other collectors.
Claim 8
Dependent Claim 35 words
A circuit as in claim 5 wherein the ratio of areas of said first, second and third collectors is such that the base drive to the third collector approaches zero when the second collector saturates.
Claim 9
Dependent Claim 15 words
A circuit as in claim 6 wherein the ratio of said areas is 1:10:10, respectively.

References Cited (Backward Citations)

US3790817A Cited
US4013898A Cited
US4081822A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-12-24 1983-06-25 1983-12-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-12-24 1987-06-25 1987-12-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-12-24 1991-06-25 1991-12-25 $7700.00 Window Closed / Lapsed

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