Schottky transistor with low residual voltage

Claim 2

In a transistor structure having a planar transistor and a Schottky diode combined in a common semiconductor crystal, said transistor having base, emitter and collector zones, and said Schottky diode being connected between said base and collector zones by means of a doped buried layer zone, the improvement comprising said buried layer zone having a pair of doped regions of one conductivity separated by a region of lesser conductivity to reduce the coupling between the diode and the transistor.

Claim 3

In a transistor structure having a planar transistor and a Schottky diode combined in a common semiconductor crystal such that the Schottky diode, through internal coupling in the semiconductor crystal, markedly influences the electric behavior of the planar transistor, the improvement comprising a doped layer for effecting coupling between the Schottky diode and the planar transistor having contiguous regions of different doping levels to produce a modified degree of coupling between the diode and the transistor as compared with a structure having a homogeneously doped coupling layer, said planar transistor being constructed such that the collector zone surrounds the base zone in a trough-like fashion, and including a contact for the Schottky diode which simultaneously forms a blockage-free base electrode at the surface of the base zone, the degree of coupling between the collector bulk resistance of the planar transistor and the Schottky diode being reduced by a zone with an increased specific resistance in said doped layer, the zones of said transistor being produced in a semiconductor layer epitaxially grown on a monocrystalline substrate, said semiconductor layer being, in particular, a monocrystalline silicon layer, said doped layer consisting of two sections separated by an interruption zone, said doped layer being located between the substrate and the epitaxial layer, said doped layer exhibiting the conductivity of the collector zone of the planar transistor and arranged with one section located beneath the base zone and the other located beneath the combined base-Schottky contact, both of said sections manifesting a greater specific electric conductivity than the collector zone, said collector zone being contacted by said one section, at the side of the base zone opposite from the Schottky diode said other section extends beyond the base zone, and including a Schottky contact provided above said extension, said contact forming, with the material of the epitaxial layer, a second Schottky diode electrically connected with said other section.

Claim 4

In a transistor structure having a planar transistor and a Schottky diode combined in a common semiconductor crystal such that the Schottky diode, through internal coupling in the semiconductor crystal, markedly influences the electric behavior of the planar transistor, the improvement comprising a doped layer for effecting coupling between the Schottky diode and the planar transistor having contiguous regions of different doping levels to produce a modified degree of coupling between the diode and the transistor as compared with a structure having a homogeneously doped coupling layer, said planar transistor being constructed such that the collector zone surrounds the base zone in a trough-like fashion, and including a contact for the Schottky diode which simultaneously forms a blockage-free base electrode at the surface of the base zone, the degree of coupling between the collector bulk resistance of the planar transistor and the Schottky diode being reduced by a zone with an increased specific resistance in said doped layer, the zones of said transistor being produced in a semiconductor layer epitaxially grown on a monocrystalline substrate, said semiconductor layer being, in particular, a monocrystalline silicon layer, said doped layer consisting of two sections separated by an interruption zone, said doped layer being located between the substrate and the epitaxial layer, said doped layer exhibiting the conductivity of the collector zone of the planar transistor and arranged with one section located beneath the base zone and the other located beneath the combined base-Schottky contact, both of said sections manifesting a greater specific electric conductivity than the collector zone, said collector zone being contacted by said one section, at the side of the base zone opposite from the Schottky diode said other section extends beyond the base zone, and including a Schottky contact provided above said extension, said contact forming, with the material of the epitaxial layer, a second Schottky diode electrically connected with said other section.

Claim 5

The transistor structure according to claim 2, wherein said one section is constructed to increase the degree of coupling between said second Schottky diode and said planar transistor.

Claim 6

The transistor structure according to claim 3, characterized in said extension manifests a higher electric conductivity.

Claim 7

In a transistor structure having a planar transistor having base, emitter and collector zones and a Schottky diode adjacent thereto combined in a common semiconductor crystal, said Schottky diode comprising a metalized layer juxtaposed with the base zone of said transistor, said metalized layer forming a blocking-free contact with the base zone of said planar transistor and forming a Schottky contact with its collector zone, the improvement comprising a first buried layer zone located adjacent and below said collector zone and doped more heavily than the collector zone with the same doping conductivity, said buried layer zone being juxtaposed with said planar transistor at a side thereof remote from said Schottky diode, said buried layer being continuous with a conducting channel leading to a connecting electrode at the semiconductor surface, said conducting channel being doped approximately the same as said buried zone, a second buried layer zone located adjacent the bottom of said collector zone below said Schottky diode, said second buried layer zone being produced simultaneously with said first buried layer zone, and a separating region doped approximately the same as said collector zone separating said first and second buried layer zones.

Claim 8

In a transistor structure having a planar transistor having base, emitter and collector zones and a Schottky diode adjacent thereto combined in a common semiconductor crystal, said Schottky diode comprising a metalized layer juxtaposed with the base zone of said transistor, said metalized layer forming a blocking-free contact with the base zone of said planar transistor and forming a Schottky contact with its collector zone, the improvement comprising a first buried layer zone located adjacent and below said collector zone and doped more heavily than the collector zone with the same doping conductivity, said buried layer zone being juxtaposed with said planar transistor at a side thereof remote from said Schottky diode, said buried layer being continuous with a conducting channel leading to a connecting electrode at the semiconductor surface, said conducting channel being doped approximately the same as said buried zone, a second buried layer zone located adjacent the bottom of said collector zone below said Schottky diode, said second buried layer zone being produced simultaneously with said first buried layer zone, and a separating region doped approximately the same as said collector zone separating said first and second buried layer zones.

Claim 9

The transistor structure according to claim 5, wherein said planar transistor is constructed such that the collector zone surrounds the base zone in a trough-like fashion, the degree of coupling between the collector bulk resistance of planar transistor and the Schottky diode being reduced by said separating region.

Claim 10

The transistor structure according to claim 6, wherein the zones of said transistor are produced in a semiconductor layer epitaxially grown on a monocrystalline substrate, said semiconductor layer being, in particular, a monocrystalline silicon layer, said first and second buried layer zones being located between the substrate and the epitaxial layer, said layer zones exhibiting the conductivity of the collector zone.

Claim 11

The transistor structure according to claim 5, wherein said channel runs transversely through the epitaxial layer, said channel having a high electric conductivity and being of the conductivity type of the collector zone to provide a conductive connection between said one section, and said connecting electrode comprising a collector electrode forming a blockage-free contact at the surface of the epitaxial layer.

Claim 12

The transistor structure according to claim 5, wherein one of said buried layer zones is closer to the surface of the epitaxial layer than said other section.