Patent US4178564A successfully refreshed from Google Patents.
US4178564A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Half wave protection layers on injection lasers
Assignee: RCA Corp
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Filing: 1976-01-15
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Granted: 1979-12-11
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Expires: 1996-01-15
Abstract
Abstract A body of semiconductor material of an injection laser device, capable of operating at a power level up to a few milliwatts per micrometer of emitting width, has two opposed facet surfaces. On at least one of the facet surfaces is a protection layer of an insulating material having an optical thickness equal to approximately one-half the vacuum wavelength of the optical radiation emitted by the device.
Inventors
- 👤 Ivan Ladany
- 👤 Michael Ettenberg
- 👤 Harry F. Lockwood
- 👤 Henry Kressel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:25
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/0282; H01S5/0283
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
132 words
A semiconductor injection laser comprising: a rectangular parallelepiped body of a single crystalline semiconductor material having opposed facet surfaces, opposed side surfaces extending to said facet surfaces, opposed contact surfaces extending to said facet surfaces and said side surfaces, with a recombination region capable of generating electroluminescence in said body and capable of operating at power levels up to a few milliwatts per micrometer of emitting radiation width, said recombination region extending from one facet surface to the opposite facet surface; and a protection layer on at least one facet surface capable of reducing facet erosion of said facet surface, said protection layer being of an optical thickness, equal to approximately "n" times one-half the vacuum wavelength of the emitted radiation, where "n" is an integer equal to or greater than 1.
Claim 2
Dependent Claim
132 words
A semiconductor injection laser comprising: a rectangular parallelepiped body of a single crystalline semiconductor material having opposed facet surfaces, opposed side surfaces extending to said facet surfaces, opposed contact surfaces extending to said facet surfaces and said side surfaces, with a recombination region capable of generating electroluminescence in said body and capable of operating at power levels up to a few milliwatts per micrometer of emitting radiation width, said recombination region extending from one facet surface to the opposite facet surface; and a protection layer on at least one facet surface capable of reducing facet erosion of said facet surface, said protection layer being of an optical thickness, equal to approximately "n" times one-half the vacuum wavelength of the emitted radiation, where "n" is an integer equal to or greater than 1.
Claim 3
Dependent Claim
17 words
The semiconductor injection laser in accordance with claim 1 wherein said protection layer is an insulating material.
Claim 4
Dependent Claim
26 words
The semiconductor injection laser in accordance with claim 2 wherein said insulating material is impervious to moisture in the ambient and will resist attack of chemicals.
Claim 5
Dependent Claim
21 words
The semiconductor injection laser in accordance with claim 3 wherein said insulating material is aluminum oxide, Al 2 O 3 .
Claim 6
Dependent Claim
19 words
The semiconductor injection laser in accordance with claim 3 wherein said insulating material is silicon dioxide, SiO 2 .
Claim 7
Dependent Claim
21 words
The semiconductor injection laser in accordance with claim 3 wherein said insulating material is silicon nitride, Si 3 N 4 .
Claim 8
Dependent Claim
19 words
The semiconductor injection laser in accordance with claim 1 wherein said protection layer is on both opposed facet surfaces.
Claim 9
Dependent Claim
28 words
The semiconductor injection laser in accordance with claim 1 wherein said protection layer has an optical thickness equal to approximately one-half the vacuum wavelength of the emitted radiation.
Claim 10
Dependent Claim
21 words
The semiconductor injection laser in accordance with claim 1 wherein said protection layer comprises a plurality of layers of dielectric material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-10 | 1983-06-11 | 1983-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-10 | 1987-06-11 | 1987-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-10 | 1991-06-11 | 1991-12-11 | $7700.00 | Window Closed / Lapsed |