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US4178415A
Expired / Lapsed
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Modified amorphous semiconductors and method of making the same
Assignee: Energy Conversion Devices Inc
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Filing: 1978-03-22
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Granted: 1979-12-11
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Expires: 1998-03-22
Abstract
Abstract An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Krishna Sapru
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10D; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/834; H10N; H10N10/00; H10N10/80; H10N10/85; H10N10/851; H10N10/855; H10N10/8556; H10P14/22
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
98 words
The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein by codeposition of the same, and controlling the amounts of silicon and oxygen in the amorphous host matrix, wherein the silicon to oxygen ratio is represented by SiO x where x can be controlled from above 0 to 2, and the amount of alkali metal incorporated therein for controlling the energy gap and the room temperature electrical conductivity of the device.
Claim 2
Independent Claim
98 words
The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein by codeposition of the same, and controlling the amounts of silicon and oxygen in the amorphous host matrix, wherein the silicon to oxygen ratio is represented by SiO x where x can be controlled from above 0 to 2, and the amount of alkali metal incorporated therein for controlling the energy gap and the room temperature electrical conductivity of the device.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the codeposition is by cosputtering.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein the alkali metal comprises lithium.
Claim 5
Dependent Claim
25 words
The method of claim 3 wherein the percent range of lithium incorporated in the amorphous semiconductor host matrix can be up to more than 28%.
Claim 6
Dependent Claim
30 words
The method of claim 1 wherein a large change in room temperature electrical conductivity can be obtained with very little change in the energy gap and the electrical activation energy.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein the electrical conductivity is by bandlike conduction.
Claim 8
Dependent Claim
73 words
An amorphous semiconductor device comprising an amorphous semiconductor film deposited on a substrate and including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein which provides a supply of electrons and having an energy gap and an increased room temperature electrical conductivity, wherein the silicon to oxygen ratio is represented by SiO x where x can be controlled from above 0 to 2.
Claim 9
Dependent Claim
73 words
An amorphous semiconductor device comprising an amorphous semiconductor film deposited on a substrate and including an amorphous semiconductor host matrix comprising silicon and oxygen and a modifier material comprising an alkali metal incorporated therein which provides a supply of electrons and having an energy gap and an increased room temperature electrical conductivity, wherein the silicon to oxygen ratio is represented by SiO x where x can be controlled from above 0 to 2.
Claim 10
Dependent Claim
11 words
The device of claim 7 wherein the alkali metal comprises lithium.
Claim 11
Dependent Claim
25 words
The device of claim 8 wherein the percent range of lithium incorporated in the amorphous semiconductor host matrix can be up to more than 28%.
Claim 12
Dependent Claim
32 words
The device of claim 7 wherein the amount of incorporated alkali metal drastically affects the room temperature electrical conductivity with very little effect on the energy gap and the electrical activation energy.
Claim 13
Dependent Claim
13 words
The device of claim 7 wherein the electrical conduction is by bandlike conduction.
Claim 14
Dependent Claim
23 words
The device of claim 7 wherein the electrons provided by the modifier material do not change the structural matrix of the host material.
Claim 15
Dependent Claim
25 words
The device of claim 7 wherein the electrons provided by the modifier material create equal numbers of positive and negative charges in the energy gap.
Claim 16
Dependent Claim
20 words
The device of claim 13 wherein the positive and negative charges are in the top half of the energy gap.
Claim 17
Dependent Claim
18 words
The device of claim 7 wherein it has a constant electrical activation energy over 9 orders of magnitude.
Claim 18
Dependent Claim
24 words
The device of claim 7 wherein it has a high thermopower of at least 1500 microvolts per degree C at temperatures of 125° C.
Claim 19
Dependent Claim
54 words
The device of claim 7 wherein the large energy gap and substantially dielectric material of the host matrix which has very few carriers available is transformed into a large band gap semiconductor material which can accept a continuous increase of free carriers whose supply is proportionate to the amount of modifier material incorporated therein.
Claim 20
Dependent Claim
32 words
The device of claim 7 wherein the amorphous semiconductor film comprises a material in which paired states are automatically created irrespective of whether even numbered or odd numbered modifier atoms are added.
Claim 21
Independent Claim
102 words
The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and a modifier material incorporated therein comprising lithium by codepositing the same, and controlling the amount of lithium incorporated in the amorphous host matrix, wherein small amounts of lithium decrease the room temperature electrical conductivity, increase the electrical activation energy and energy gap, and increase the photoconductivity of the device, and large amounts of lithium increase the room temperature electrical conductivity, decrease the electrical activation energy and the energy gap, and decrease the photoconductivity of the device.
Claim 22
Independent Claim
102 words
The method of making an amorphous semiconductor device comprising depositing on a substrate an amorphous semiconductor film including an amorphous semiconductor host matrix comprising silicon and a modifier material incorporated therein comprising lithium by codepositing the same, and controlling the amount of lithium incorporated in the amorphous host matrix, wherein small amounts of lithium decrease the room temperature electrical conductivity, increase the electrical activation energy and energy gap, and increase the photoconductivity of the device, and large amounts of lithium increase the room temperature electrical conductivity, decrease the electrical activation energy and the energy gap, and decrease the photoconductivity of the device.
Claim 23
Dependent Claim
11 words
The method of claim 19 wherein the codeposition is by cosputtering.
Claim 24
Dependent Claim
27 words
The method of claim 19 wherein said small amounts of lithium are less than approximately 5% and said large amounts of lithium are more than approximately 5%.
References Cited (Backward Citations)
US3917491A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-10 | 1983-06-11 | 1983-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-10 | 1987-06-11 | 1987-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-10 | 1991-06-11 | 1991-12-11 | $7700.00 | Window Closed / Lapsed |