Patent US4178191A successfully refreshed from Google Patents.
US4178191A
Expired / Lapsed
US
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Process of making a planar MOS silicon-on-insulating substrate device
Assignee: RCA Corp
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Filing: 1978-08-10
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Granted: 1979-12-11
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Expires: 1998-08-10
Abstract
Abstract An improved process of forming planar silicon-on-sapphire MOS integrated circuit devices by a local oxidation process in which portions of a silicon layer on a sapphire substrate are thermally oxidized throughout the thickness of the layer to provide interdevice dielectric isolation and a substantially planar topology includes a step of ion implanting phosphorus, boron, or a combination thereof into the silicon prior to the thermal oxidation step. The implanted impurities have a stabilizing effect on the devices thereafter built in the remaining silicon.
Inventors
- 👤 Doris W. Flatley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:12
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0124; H10W10/0125; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/077; Y10S148/093; Y10S438/00; Y10S438/911; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
In a process of making a planar silicon-on-insulating-substrate device which process includes the steps of forming an etch resistant, oxygen impermeable masking coating on discrete areas of the surface of a layer of silicon on an insulating substrate, and etching the unmasked portions of said silicon layer down to a depth about one-half the thickness of said silicon layer, the improvement comprising: without removing said masking coating, introducing stabilizing impurities into the surface of the unmasked portions of the silicon layer, and thereafter thermally oxidizing only the unmasked portions of the silicon layer to convert it to stabilized silicon dioxide in surrounding relation to the remaining masked portions of the silicon layer.
Claim 2
Dependent Claim
112 words
In a process of making a planar silicon-on-insulating-substrate device which process includes the steps of forming an etch resistant, oxygen impermeable masking coating on discrete areas of the surface of a layer of silicon on an insulating substrate, and etching the unmasked portions of said silicon layer down to a depth about one-half the thickness of said silicon layer, the improvement comprising: without removing said masking coating, introducing stabilizing impurities into the surface of the unmasked portions of the silicon layer, and thereafter thermally oxidizing only the unmasked portions of the silicon layer to convert it to stabilized silicon dioxide in surrounding relation to the remaining masked portions of the silicon layer.
Claim 3
Dependent Claim
26 words
A process of making a planar silicon-on-insulating-substrate device as defined in claim 1 wherein the step of introducing stabilizing impurities is carried out by ion implantation.
Claim 4
Dependent Claim
21 words
A process of making a planar silicon-on-insulating-substrate device as defined in claim 2 wherein the introduced stabilizing impurities are phosphorus atoms.
Claim 5
Dependent Claim
32 words
A process of making a planar silicon-on-insulating-substrate device as defined in claim 3 wherein the step of thermally oxidizing the unmasked silicon is carried out at a temperature less than 900° C.
Claim 6
Dependent Claim
53 words
A process of making a planar silicon-on-insulating-substrate device as defined in claim 4 wherein said ion implantation step is carried out at an energy level of 50 KeV and at a dose of about 10 12 /cm 2 to achieve a maximum concentration of impurities of about 1× 10 16 /cm 3 .
Claim 7
Dependent Claim
90 words
A process of making a planar silicon-on-insulating-substrate device as defined in claim 4, in which said layer of silicon is initially formed to a thickness of about 0.6μ thick, and wherein said ion implantation is carried out at an energy level of 40-60 KeV at a dose of about 1× 10 15 /cm 2 , said process further comprising: ion implanting boron in addition to said phosphorus, at an energy level of 70-100 KeV and at a dose of 1× 10 15 /cm 2 prior to the thermal oxidation step.
Claim 8
Dependent Claim
22 words
A process of making a planar MOS silicon-on-insulating-substrate device as defined in claim 2 wherein the introduced stabilizing impurities are boron atoms.
Claim 9
Dependent Claim
43 words
A process of making a planar MOS silicon-on-insulating-substrate device as defined in claim 7 comprising the further step of: heating said device during further processing of the remaining silicon, to diffuse the boron atoms out of said silicon dioxide into said remaining silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-10 | 1983-06-11 | 1983-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-10 | 1987-06-11 | 1987-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-10 | 1991-06-11 | 1991-12-11 | $7700.00 | Window Closed / Lapsed |