Patent US4177094A successfully refreshed from Google Patents.
US4177094A
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US
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Method of treating a monocrystalline body utilizing a measuring member consisting of a monocrystalline layer and an adjoining substratum of different index of refraction
Assignee: US Philips Corp
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Filing: 1978-09-13
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Granted: 1979-12-04
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Expires: 1998-09-13
Abstract
Abstract A method in which a monocrystalline body is subjected in a gas atmosphere to a treatment for changing the thickness of the body, in which the thickness of the body is controlled by means of a measuring member which is subjected to the same treatment and which measuring member, on its side which is subjected to the treatment, consists of a monocrystalline layer and an adjoining substratum of a material having a refractive index differing of that the monocrystalline layer material. The measuring member is obtained by providing a substrate, depositing the monocrystalline layer on the substrate, forming the substratum on the monocrystalline layer, and then removing the substrate to form the measuring member.
Inventors
- 👤 Simon G. Kroon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 06:11
CPC Classifications
G; G01; G01B; G01B11/00; G01B11/02; G01B11/06; G01B11/0616; G01B11/0683; C; C30; C30B; C30B25/00; C30B25/02; C30B25/16
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
128 words
A method of manufacturing a semiconductor device which comprises the steps of: providing a monocrystalline semiconductor body; subjecting said body to a treatment in a gas atmosphere which changes the thickness of said body; controlling the thickness of said body by means of a measuring member which is subjected to the same treatment, said member comprising a monocrystalline layer and an adjoining substratum of a material having a refractive index differing from that of the monocrystalline layer, the process of obtaining said measuring member comprising the steps of: providing a substrate; depositing said monocrystalline layer on said substrate; forming the substratum on said monocrystalline layer; and forming the measuring member by removing said substrate so as to leave a composite structure of said monocrystalline layer and said substratum.
Claim 2
Independent Claim
128 words
A method of manufacturing a semiconductor device which comprises the steps of: providing a monocrystalline semiconductor body; subjecting said body to a treatment in a gas atmosphere which changes the thickness of said body; controlling the thickness of said body by means of a measuring member which is subjected to the same treatment, said member comprising a monocrystalline layer and an adjoining substratum of a material having a refractive index differing from that of the monocrystalline layer, the process of obtaining said measuring member comprising the steps of: providing a substrate; depositing said monocrystalline layer on said substrate; forming the substratum on said monocrystalline layer; and forming the measuring member by removing said substrate so as to leave a composite structure of said monocrystalline layer and said substratum.
Claim 3
Dependent Claim
43 words
A method of manufacturing a semiconductor device as in claim 1, wherein the treatment in a gas atmosphere causes the thickness of said body to increase, which comprises the step of epitaxially depositing at least one layer of semiconductor material on said body.
Claim 4
Dependent Claim
30 words
A method of manufacturing a semiconductor device as in claim 1, wherein the step of removing said substrate comprises the step of selectively etching said substrate from said monocrystalline layer.
Claim 5
Dependent Claim
21 words
A method of manufacturing a semoconductor device as in claim 1, wherein a layer of polysilicon is provided on said substratum.
Claim 6
Dependent Claim
27 words
A method of manufacturing a semiconductor device as in claim 2, wherein the semiconductor material is selected from the group consisting of silicon and the III-V compounds.
Claim 7
Dependent Claim
31 words
A method of manufacturing a semiconductor device as in claim 1, wherein said substrate and said monocrystalline layer are of differing conductivity types and wherein said monocrystalline layer is epitaxially deposited.
Claim 8
Independent Claim
27 words
A method of manufacturing a semiconductor device as in claims 1, 2, 3, 4, 5 or 6, wherein said substratum consists of silicon nitride or silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-12-03 | 1983-06-04 | 1983-12-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-12-03 | 1987-06-04 | 1987-12-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-12-03 | 1991-06-04 | 1991-12-04 | $7700.00 | Window Closed / Lapsed |