Patent US4172906A successfully refreshed from Google Patents.
US4172906A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for passivating III-V compound semiconductors
Assignee: Boeing North American Inc
•
Filing: 1977-05-11
•
Granted: 1979-10-30
•
Expires: 1997-05-11
Abstract
Abstract High quality native surface passivation dielectrics on Group III-Group V compound semiconductors are produced by thermal conversion of a surface layer having a specially provided composition. The electrical properties of these dielectrics meet the requirements for dielectric and passivation layers over semiconductor devices generally and in field effect devices in particular.
Inventors
- 👤 Ranjeet K. Pancholy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 17:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; H10P14/6322; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/208; Y; Y10; Y10S; Y10S148/00; Y10S148/084; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
115 words
A method of making a semiconductor by growing a native passivation dielectric on the surface of a III-V semiconductor compound comprising: providing a wafer of III-V semiconductor compound having uniform composition, selecting a passivation enabling element from the III-V materials which will enable said compound to be converted to a dielectric; forming a surface layer at said compound by ion implantation to form an increased concentration of said selected element over the concentration in another region of said III-V semiconductor compound; and converting all of said surface layer to a native dielectric which could not have been formed from said III-V semiconductor compound by that conversion process absent the increased concentration of said selected element.
Claim 2
Independent Claim
115 words
A method of making a semiconductor by growing a native passivation dielectric on the surface of a III-V semiconductor compound comprising: providing a wafer of III-V semiconductor compound having uniform composition, selecting a passivation enabling element from the III-V materials which will enable said compound to be converted to a dielectric; forming a surface layer at said compound by ion implantation to form an increased concentration of said selected element over the concentration in another region of said III-V semiconductor compound; and converting all of said surface layer to a native dielectric which could not have been formed from said III-V semiconductor compound by that conversion process absent the increased concentration of said selected element.
Claim 3
Dependent Claim
22 words
The method recited in claim 1 wherein said conversion process comprises thermal oxidation of said surface to form an oxygen containing compound.
Claim 4
Dependent Claim
41 words
The method recited in claim 1 wherein said compound is gallium arsenide, said selected at least one element is phosphorous and said conversion process comprises thermal oxidation and the molar composition of said passivating dielectric is at least 50% gallium phosphate.
Claim 5
Dependent Claim
19 words
The method recited in claim 1 wherein said surface layer is formed as an integral part of said wafer.
Claim 6
Dependent Claim
34 words
The method recited in claim 1 wherein said semiconductor compound is monocrystalline and said forming step further comprises recrystalizing said surface layer to form a continuous monocrystalline crystal with the remainder of said compound.
Claim 7
Dependent Claim
30 words
The method recited in claim 5 wherein said forming step comprises adding a nutrient element to change the chemical composition of said wafer in the vicinity of said one surface.
Claim 8
Dependent Claim
44 words
The method recited in claim 5 wherein said wafer comprises GaAs, said surface layer is formed by combining phosphorous with said GaAs to form GaAsP, and said dielectric is formed by thermally oxidizing all of said surface layer of GaAsP to form GPO (Gallium-Phosphate-Oxide).
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-29 | 1983-04-30 | 1983-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-29 | 1987-04-30 | 1987-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-29 | 1991-04-30 | 1991-10-30 | $7700.00 | Window Closed / Lapsed |