Patent US4171528A successfully refreshed from Google Patents.
US4171528A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solderable zener diode
Assignee: ITT Inc
•
Filing: 1978-11-03
•
Granted: 1979-10-16
•
Expires: 1998-11-03
Abstract
Abstract A solderable zener diode adapted for mounting in a package of the type wherein leads or electrodes must be soldered to the diode contact pads has a shallow junction region formed by a controlled diffusion of a first type of semiconductivity impurity into a semiconductive material having a second type of semiconductivity to establish a desired zener voltage. A region of deep diffusion of first type of semiconductivity impurity is formed about and in contact with the shallow junction region, and a metal contact is electrically connected to the deep diffused region about its entire periphery. The shallow junction region is overlayed with a layer of glass and sputtered quartz and a metal contact pad is formed over the entire diffused region of the zener diode including the shallow junction region and the deep diffused region using multiple layers of contact metal.
Inventors
- 👤 Harry C. Kling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 18:10
CPC Classifications
H; H10; H10W; H10W72/00; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10D8/00; H10D8/20; H10D8/25; H10W72/30; H10W74/00; H10W74/10; H10W74/111
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
170 words
A solderable zener diode, comprising: a body of semiconductive material having a first type of semiconductivity, said body having opposed front and back surfaces; an electrical contact formed on the back surface of said body; a shallow region of second type of semiconductivity formed in the front surface of said body opposite said electrical contact and in PN junction forming relation with the first type of semiconductivity of the body; a deep diffused region of second type of semiconductivity formed in the front surface of said body in contact with and about the entire periphery of the shallow region; a dielectric layer formed on the entire surface of the shallow region and an adjacent portion of the deep diffused region about the shallow region; and an electrical contact alloyed into said dielectric layer over the shallow region and the deep diffused region thereby providing a hermetic seal, said contact being connected to the deep diffused region over the entire length thereof and about the entire periphery of the shallow region.
Claim 2
Dependent Claim
170 words
A solderable zener diode, comprising: a body of semiconductive material having a first type of semiconductivity, said body having opposed front and back surfaces; an electrical contact formed on the back surface of said body; a shallow region of second type of semiconductivity formed in the front surface of said body opposite said electrical contact and in PN junction forming relation with the first type of semiconductivity of the body; a deep diffused region of second type of semiconductivity formed in the front surface of said body in contact with and about the entire periphery of the shallow region; a dielectric layer formed on the entire surface of the shallow region and an adjacent portion of the deep diffused region about the shallow region; and an electrical contact alloyed into said dielectric layer over the shallow region and the deep diffused region thereby providing a hermetic seal, said contact being connected to the deep diffused region over the entire length thereof and about the entire periphery of the shallow region.
Claim 3
Dependent Claim
39 words
The zener diode as described in claim 1, additionally comprising a dielectric layer formed over a portion of the front surface of the body surrounding the deep diffused region and over an adjacent portion of said deep diffused region.
Claim 4
Dependent Claim
47 words
The zener diode as described in claim 1, wherein said contact formed over the diffused regions of the body comprises at least two metal layers, the first of which is alloyed to the dielectric layer and the second of which provides good surface characteristics for solder adhesion.
Claim 5
Dependent Claim
52 words
The zener diode as described in claim 3, wherein the first metal layer of the contact is formed of a metal selected from a group of metals including chrome, titanium and aluminum, and the second metal layer is formed from a metal selected from a group of metals including nickel and copper.
Claim 6
Dependent Claim
18 words
The zener diode as described in claim 3, wherein the metal of the first layer provides good adhesion.
Claim 7
Dependent Claim
29 words
The zener diode as described in claim 2, wherein the dielectric layer over the shallow region and the dielectric layer surrounding the deep diffused region each include deposited oxide.
Claim 8
Dependent Claim
41 words
The zener diode as described in claim 1, wherein the dielectric layer over the shallow region includes a first layer of silicate glass inherently formed during formation of the shallow region and a layer of deposited oxide over said silicate glass.
Claim 9
Dependent Claim
29 words
The zener diode as described in claim 2, wherein the dielectric layer surrounding the deep diffused region includes a silicon nitride layer overlaid with a layer of deposited oxide.
Claim 10
Dependent Claim
29 words
The zener diode as described in claim 1, wherein the contact formed on the back surface is formed of a metal selected from a group including nickel and titanium.
Claim 11
Dependent Claim
21 words
The zener diode as described in claim 1, in which the contact formed on the back surface comprises nickel sintered nickel.
Claim 12
Dependent Claim
34 words
A zener diode as described in claim 1, additionally comprising layers of metal formed on the contacts of the front and back surfaces, said metal being selected from a group including tin and solder.
Claim 13
Dependent Claim
33 words
The zener diode as described in claim 11, additionally comprising means for encapsulating said zener diode, said means including electrical contact means soldered to the front and back contacts of the zener diode.
References Cited (Backward Citations)
US3534231A
Cited
US4030117A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-15 | 1983-04-16 | 1983-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-15 | 1987-04-16 | 1987-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-15 | 1991-04-16 | 1991-10-16 | $7700.00 | Window Closed / Lapsed |