US4171492A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Temperature compensated zener diode arrangement
Assignee: General Semiconductor Ireland
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Filing: 1977-08-22
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Granted: 1979-10-16
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Expires: 1997-08-22
Abstract
Abstract A zener diode is disclosed which is temperature-compensated for a special application. If a zener diode is operated with a switch shunted across it, and its on-off ratio is variable, its dissipation will vary. It is proposed to form on the zener diode crystal an additional dissipative component which is switched on/off in an opposite sense to that of the zener diode. Thus, the total dissipation remains constant.
Inventors
- 👤 Rolf D. Burth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:46
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/18
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
123 words
A temperature compensated actual zener diode arrangement in the form of a semiconductor integrated circuit comprising: a first external terminal connected to a said zener diode, a second external terminal connected to said zener diode, a first transistor structure having its collected-emitter path coupled between said first and second external terminals and formed within said body of semiconductor material; a second transistor structure formed within said body having its emitter collector path coupled between said second external terminal and a third external terminal; and at least one dissipative structure coupled in series with the emitter-collector path of said second transistor structure between said second and third external terminals, said first and seconnd transistor structure having bases each coupled to a fourth external terminal.
Claim 2
Dependent Claim
123 words
A temperature compensated actual zener diode arrangement in the form of a semiconductor integrated circuit comprising: a first external terminal connected to a said zener diode, a second external terminal connected to said zener diode, a first transistor structure having its collected-emitter path coupled between said first and second external terminals and formed within said body of semiconductor material; a second transistor structure formed within said body having its emitter collector path coupled between said second external terminal and a third external terminal; and at least one dissipative structure coupled in series with the emitter-collector path of said second transistor structure between said second and third external terminals, said first and seconnd transistor structure having bases each coupled to a fourth external terminal.
Claim 3
Dependent Claim
21 words
An arrangement according to claim 1 wherein said at least one dissipative structure is formed within said body of semiconductor material.
Claim 4
Dependent Claim
22 words
An arrangement according to claim 1 wherein said at least one dissipative structure is formed on said body of said semiconductor material.
Claim 5
Dependent Claim
15 words
An arrangement according to claim 1 wherein said dissipative structure is a diffused resistance structure.
Claim 6
Dependent Claim
16 words
An arrangement according to claim 1 wherein said dissipative structure is a resistor deposited by evaporation.
Claim 7
Dependent Claim
14 words
An arrangement according to claim 1 wherein said dissipative structure is a diode structure.
Claim 8
Dependent Claim
14 words
An arrangement according to claim 1 wherein said dissipative structure is a transistor structure.
Claim 9
Dependent Claim
30 words
An arrangement according to claim 1 wherein said dissipative structure surrounds said first and second transistor structures in the body of said semiconductor material in the form of a ring.
Claim 10
Dependent Claim
75 words
An arrangement according to claim 1 further comprising: means for coupling a first source of supply voltage to said first external terminals; means for supplying a second source of supply voltage to said third external terminal; a pulse generator having an output coupled to said fourth external terminal for supplying a pulse train of variable pulse duty factor; and a filter circuit coupled between said first and second external terminals for providing a tuning voltage.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-10-15 | 1983-04-16 | 1983-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-10-15 | 1987-04-16 | 1987-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-10-15 | 1991-04-16 | 1991-10-16 | $7700.00 | Window Closed / Lapsed |