Patent US4168432A successfully refreshed from Google Patents.
US4168432A
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Method of testing radiation hardness of a semiconductor device
Assignee: RCA Corp
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Filing: 1978-01-16
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Granted: 1979-09-18
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Expires: 1998-01-16
Abstract
Abstract A body of semiconductor material having a layer of an oxide on a surface thereof is subjected to a negative corona discharge in air to deposit a negative charge on the outer surface of the oxide. This results in an immobile positive charge at the interface between the oxide layer and the semiconductor body. The amount of this positive charge, which can be measured by standard MOS capacitance measurements, indicates the radiation hardness of the device.
Inventors
- 👤 Richard Williams
- 👤 Murray H. Woods
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:25
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2637
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
98 words
A method of determining the radiation hardness of a semiconductor device which includes a body of semiconductor material having a layer of an oxide on a surface thereof comprising the steps of: (a) creating by a corona discharge a high but non-destructive electric field across the oxide layer so as to ionize hole trapping centers near the interface between the oxide layer and the body and leave behind immobile positive charges, and (b) determining the shift in the flat-band voltage which is proportional to the concentration of hole traps and signifies the susceptibility to radiation of the device.
Claim 2
Independent Claim
98 words
A method of determining the radiation hardness of a semiconductor device which includes a body of semiconductor material having a layer of an oxide on a surface thereof comprising the steps of: (a) creating by a corona discharge a high but non-destructive electric field across the oxide layer so as to ionize hole trapping centers near the interface between the oxide layer and the body and leave behind immobile positive charges, and (b) determining the shift in the flat-band voltage which is proportional to the concentration of hole traps and signifies the susceptibility to radiation of the device.
Claim 3
Dependent Claim
29 words
The method in accordance with claim 1 in which the radiation hardness of the semiconductor device is determined immediately after the oxide layer is formed on the semiconductor body.
Claim 4
Dependent Claim
17 words
The method in accordance with claim 1 in which the corona discharge is a negative corona discharge.
Claim 5
Dependent Claim
20 words
The method in accordance with claim 3 in which the oxide layer is subjected to the corona discharge in air.
Claim 6
Dependent Claim
30 words
The method in accordance with claim 4 in which step (b) is achieved by measuring the flat-band voltage before and after the oxide layer is subjected to the corona discharge.
Claim 7
Dependent Claim
20 words
The method in accordance with claim 4 in which the semiconductor body is silicon and the oxide is silicon oxide.
References Cited (Backward Citations)
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Cited
US3493752A
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US3723873A
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US3748579A
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US3840809A
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US3882391A
Cited
US3995216A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-09-17 | 1983-03-19 | 1983-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-09-17 | 1987-03-19 | 1987-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-09-17 | 1991-03-19 | 1991-09-18 | $7700.00 | Window Closed / Lapsed |