Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
137 words
In a semiconductive, channel conduction, field sensor device having a substrate of semiconductive material, a source region and at least two separated drain regions in said substrate, the improvement comprising: at least two first conductive channels in said substrate connecting said source and said drains, there being one said drain connected to each said channel; said first channels of conducting material each have a filamentary form defined by having a Vinhall width to channel width ratio in the vicinity of said source that is greater than 0 and less than 0.98; and a Lorentz voltage generating conductive channel in said substrate between said two first conductive channels and electrically coupling said two first channels together for applying a Lorentz voltage thereto in a direction at right angles to the flow of carriers in said two first channels.
Claim 2
Dependent Claim
137 words
In a semiconductive, channel conduction, field sensor device having a substrate of semiconductive material, a source region and at least two separated drain regions in said substrate, the improvement comprising: at least two first conductive channels in said substrate connecting said source and said drains, there being one said drain connected to each said channel; said first channels of conducting material each have a filamentary form defined by having a Vinhall width to channel width ratio in the vicinity of said source that is greater than 0 and less than 0.98; and a Lorentz voltage generating conductive channel in said substrate between said two first conductive channels and electrically coupling said two first channels together for applying a Lorentz voltage thereto in a direction at right angles to the flow of carriers in said two first channels.
Claim 3
Dependent Claim
74 words
In a device as described in claim 1, the improvement further comprising: a separate load resistance connected to each said drain in series with a source of voltage; and the distance between said source and said drains divided by said Vinhall width is greater than the value defined by the load resistance multiplied by the channel carrier density and by the channel carrier mobility and the electron unit charge in said two first channels.
Claim 4
Dependent Claim
48 words
In a device as described in claims 1 or 2, the improvement further comprising: the ratio of the Vinhall width of each said first channels in the vicinity of said drains to the Vinhall width of each of said first channels at said source is greater than 1.
Claim 5
Dependent Claim
81 words
In a device as described in claim 1, the improvement further comprising: the ratio of the Vinhall width of each of said first channels at a point along each of said first channels intermediate said source and said drains to the Vinhall width of each of said first channels at said drains is greater than 1; and the ratio of said width at said intermediate point along said first channels to said Vinhall width at said source is equal to one.
Claim 6
Dependent Claim
29 words
In a device as described in claims 1 or 2 or 3 or 4, the improvement further comprising: said separation between said drains is less than said Vinhall width.
Claim 7
Dependent Claim
47 words
In a device as described in claims 1 or 2 or 3 or 4 or 5, the improvement further comprising: said drains have a dimension taken parallel to the center of said channels which is less than equal to the distance separating said drains from one another.
Claim 8
Dependent Claim
69 words
In a device as described in claims 1 or 2 or 3 or 4 or 5 or 6, the improvement further comprising: said two first channels lying beneath the surface of said substrate and being separated therefrom by a layer of material of opposite conductivity to said two first channels and being separated from the surface of said substrate by a distance which is less than said Vinhall width.
Claim 9
Dependent Claim
56 words
In a device as described in claims 1 or 2 or 3 or 4 or 5 or 6 or 7, the improvement further comprising: the Vinhall width of each of said two first channels is greater than the thickness of each of said two first channels in the direction perpendicular to the surface of said substrate.
Claim 10
Dependent Claim
54 words
In a device as described in claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8, the improvement further comprising: voltage means applied between said source and said drains having sufficient magnitude to create pinch off of said two first conductive channels in the vicinity of said drains.
Claim 11
Dependent Claim
57 words
In a device as described in claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9, the improvement further comprising: the ratio of the width of said Lorentz voltage channel in the vicinity of said drains to the width of said channel at said source is greater than 1.
Claim 12
Dependent Claim
88 words
In a device as described in claims 1 or 2 or 3 or 4 or 5 or 6 or 7 or 8 or 9, the improvement further comprising: the ratio of the width of said Lorentz voltage channel at a point thereon intermediate said source and said drains to the width of said channel at said source is 1; and the ratio of said width of said channel at said intermediate point to the width of said channel in the vicinity of said drains is less than 1.