US4163243A
Expired / Lapsed
US
⏱️ 0.0 years remaining
One-transistor memory cell with enhanced capacitance
Assignee: HP Inc
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Filing: 1977-09-30
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Granted: 1979-07-31
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Expires: 1997-09-30
Abstract
Abstract A one-transistor memory cell is provided in which the depletion-layer capacitance of an MOS capacitor is increased by locally enhancing the substrate dopant concentration. In preferred embodiments the substrate may also be doped adjacent to the substrate-insulator boundary with ions of appropriate conductivity type to form a diode junction in the substrate. The effective capacitance of the memory cell is therefore the capacitance of the insulator in parallel with the substantially increased depletion-layer or diode junction capacitance.
Inventors
- 👤 Theodore I. Kamins
- 👤 Charles G. Sodini
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:11
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; G11C11/35; H; H10; H10B; H10B12/00; H10B12/30
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
137 words
A semiconductor memory cell comprising: a substrate of a semiconductor material of a first conductivity type; an insulating layer on a portion of said substrate; an electrically conducting gate on said insulating layer having a voltage applied thereto with respect to said substrate to create a depletion layer at the surface of said substrate in which charges can be stored; an enhanced region of said first conductivity type but of higher conductivity than said substrate under said electrically conducting gate and extending from said insulating layer into said substrate, said depletion layer and any charges stored therein lying substantially wholly within said enhanced region; gating means for introducing charge into said cell to represent a logical state and allowing sensing of charge in said cell to indicate a logical state represented by charge stored in said cell.
Claim 2
Dependent Claim
137 words
A semiconductor memory cell comprising: a substrate of a semiconductor material of a first conductivity type; an insulating layer on a portion of said substrate; an electrically conducting gate on said insulating layer having a voltage applied thereto with respect to said substrate to create a depletion layer at the surface of said substrate in which charges can be stored; an enhanced region of said first conductivity type but of higher conductivity than said substrate under said electrically conducting gate and extending from said insulating layer into said substrate, said depletion layer and any charges stored therein lying substantially wholly within said enhanced region; gating means for introducing charge into said cell to represent a logical state and allowing sensing of charge in said cell to indicate a logical state represented by charge stored in said cell.
Claim 3
Dependent Claim
53 words
A memory cell as in claim 1 wherein: said gating means comprises an additional pair of surface regions of said second conductivity type in said substrate, an additional insulating layer on a portion of said substrate between said pair of surface regions, and an additional electrically conducting gate on said additional insulating layer.
Claim 4
Dependent Claim
24 words
A memory cell as in claim 1 wherein: said substrate is a P-type semiconductor; and said enhanced region is a P + -type semiconductor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-30 | 1983-01-29 | 1983-07-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-30 | 1987-01-29 | 1987-07-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-30 | 1991-01-29 | 1991-07-31 | $7700.00 | Window Closed / Lapsed |