Process for producing thin film resistor

Claim 2

A process for producing a thin film resistor, which comprises a first step of forming a tantalum nitride film on an alumina substrate by sputtering, a second step of removing part of the tantalum nitride film formed in the first step by photo etching, thereby forming a pattern, and anodically oxidizing part of the pattern destined to be the resistor, thereby forming a tantalum pentoxide film, a third step of forming a first electrode layer of one metal selected from chromium, titanium, and Nichrome by vacuum vapor deposition on the pattern, so that the tantalum pentoxide formed in the second step is directly connected to a conductor part and the electrode layer is apart from the conductor part, and forming a nickel film as a second electrode layer on the first electrode layer likewise by vacuum vapor deposition, whereby an electrode part is formed apart from said conductor part, a fourth step of heat treating the article obtained in the third step in an atmosphere of a gas selected from argon gas, nitrogen gas and argon-nitrogen gas mixture, and a fifth step of forming a solder bump at the electrode part treated in the fourth step.

Claim 3

A process according to claim 1, wherein, in said third step, a first conductor layer is formed simultaneously with said first electrode layer by vacuum vapor deposition, said first conductor layer being formed of a metal selected from the group consisting of chromium, titanium and Nichrome, and a second conductor layer is formed simultaneously with the second electrode layer by vacuum vapor deposition, said second conductor layer being formed on said first conductor layer and of nickel, whereby said conductor part is formed.

Claim 4

A process according to claim 2, wherein said first conductor layer and said first electrode layer are made from the same material, and said second conductor layer and second electrode layer are made from the same material.

Claim 5

A process according to claim 3, wherein the conductor part and the electrode part are formed on a part of the pattern not having a tantalum pentoxide film formed thereon.

Claim 6

A process according to claim 4, wherein said fourth step of heat treating the article is carried out by heating at a temperature of 250°-400° C. for 0.5-5 hours.

Claim 7

A process for producing a thin film resistor, which comprises a first step of forming a non-alkaline glass film on an alumina substrate, a second step of forming a tantalum film on the non-alkaline glass film formed in the first step and then oxidizing the tantalum film, thereby forming a tantalum pentoxide film, a third step of forming a tantalum nitride film on said tantalum pentoxide film by sputtering, a fourth step of removing part of the tantalum nitride film formed in said third step by photo etching, thereby forming a pattern, and anodically oxidizing part of the pattern destined to be the resistor, thereby forming a tantalum pentoxide film, a fifth step of forming a first electrode layer of one metal selected from chromium, titanium, and Nichrome by vacuum vapor deposition on the pattern, so that the tantalum pentoxide formed in the fourth step is directly connected to a conductor part and the electrode layer is apart from the conductor part, and forming a nickel film as a second electrode layer on the first electrode layer likewise by vacuum vapor deposition, whereby an electrode part is formed apart from said conductor part, a sixth step of heat treating the article obtained in the fifth step in an atmosphere of a gas selected from argon gas, nitrogen gas and argon-nitrogen gas mixture, and a seventh step of forming a solder bump at the electrode part treated in the sixth step.

Claim 8

A process for producing a thin film resistor, which comprises a first step of forming a non-alkaline glass film on an alumina substrate, a second step of forming a tantalum film on the non-alkaline glass film formed in the first step and then oxidizing the tantalum film, thereby forming a tantalum pentoxide film, a third step of forming a tantalum nitride film on said tantalum pentoxide film by sputtering, a fourth step of removing part of the tantalum nitride film formed in said third step by photo etching, thereby forming a pattern, and anodically oxidizing part of the pattern destined to be the resistor, thereby forming a tantalum pentoxide film, a fifth step of forming a first electrode layer of one metal selected from chromium, titanium, and Nichrome by vacuum vapor deposition on the pattern, so that the tantalum pentoxide formed in the fourth step is directly connected to a conductor part and the electrode layer is apart from the conductor part, and forming a nickel film as a second electrode layer on the first electrode layer likewise by vacuum vapor deposition, whereby an electrode part is formed apart from said conductor part, a sixth step of heat treating the article obtained in the fifth step in an atmosphere of a gas selected from argon gas, nitrogen gas and argon-nitrogen gas mixture, and a seventh step of forming a solder bump at the electrode part treated in the sixth step.

Claim 9

A process according to claim 6, wherein, in said fifth step, a first conductor layer is formed simultaneously with said first electrode layer by vacuum vapor deposition, and said first conductor layer being formed of a metal selected from the group consisting of chromium, titanium and Nichrome, and a second conductor layer is formed simultaneously with the second electrode layer by vacuum vapor deposition, said second conductor layer being formed on said first conductor layer and of nickel, whereby said conductor part is formed.

Claim 10

A process according to claim 7, wherein said first conductor layer and said first electrode layer are made from the same material, and said second conductor layer and second electrode layer are made from the same material.

Claim 11

A process according to claim 8, wherein the conductor part and the electrode part are formed on a part of the pattern not having a tantalum pentoxide film formed thereon.

Claim 12

A process according to claim 9, wherein said sixth step of heat treating the article is carried out by heating at a temperature of 250°-400° C. for 0.5-5 hours.