US4160261A
Expired / Lapsed
US
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Mis heterojunction structures
Assignee: AT&T Inc
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Filing: 1978-01-13
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Granted: 1979-07-03
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Expires: 1998-01-13
Abstract
Abstract In a metal-insulator-semiconductor (MIS) structure, the I-layer comprises a single-crystal, semi-insulating layer which forms a substantially lattice-matched heterojunction with the underlying S-layer. Illustratively, the structure, grown by MBE, includes an indirect gap AlGaAs I-layer doped with a deep level impurity such as oxygen, iron or chromium, and a GaAs S-layer. GaAs FETs incorporating this MIS structure are described.
Inventors
- 👤 Horace C. Casey, Jr.
- 👤 Alfred Y. Cho
- 👤 Edward H. Nicollian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:24
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/602; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D30/80; H10D30/801; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10D64/64; H10D64/66; H10D64/665; H10D64/666; H10D62/82; H10D62/824; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/917
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
93 words
A semiconductor device comprising a single-crystal semiconductor body, an insulative layer formed on a major surface of said body, and a metal electrode formed on said insulative layer CHARACTERIZED IN THAT said insulative layer comprises a single-crystal layer having a resistivity in excess of about 10 8 ohm-cm and adapted to prevent any substantial flow of current therethrough, said insulative layer having a wider bandgap than, but substantially the same lattice constant as, said body so as to form a substantially lattice-matched heterojunction at the interface between said body and said insulative layer.
Claim 2
Dependent Claim
93 words
A semiconductor device comprising a single-crystal semiconductor body, an insulative layer formed on a major surface of said body, and a metal electrode formed on said insulative layer CHARACTERIZED IN THAT said insulative layer comprises a single-crystal layer having a resistivity in excess of about 10 8 ohm-cm and adapted to prevent any substantial flow of current therethrough, said insulative layer having a wider bandgap than, but substantially the same lattice constant as, said body so as to form a substantially lattice-matched heterojunction at the interface between said body and said insulative layer.
Claim 3
Dependent Claim
16 words
The device of claim 1 wherein said body and said layer comprise Group III-V compound materials.
Claim 4
Dependent Claim
23 words
The device of claim 2 wherein said layer includes a deep level impurity selected from the group consisting of iron, chromium, and oxygen.
Claim 5
Dependent Claim
21 words
The device of claim 2 wherein said insulative layer comprises Al x Ga 1-x As (0<×<1) and said body comprises GaAs.
Claim 6
Dependent Claim
13 words
The device of claim 4 wherein said insulative layer is doped with oxygen.
Claim 7
Dependent Claim
19 words
The device of claim 4 wherein x is adapted so that said insulative layer is an indirect gap material.
Claim 8
Dependent Claim
21 words
The device of claim 1 further including an amorphous insulative layer disposed between said metal electrode and said single-crystal insulative layer.
Claim 9
Dependent Claim
85 words
A seimconductor device comprising a single-crystal body of GaAs, a single-crystal layer of Al x Ga 1-x As, 0.4≲×<1, grown on a major surface of said body so as to form a substantially lattice-matched heterojunction at the interface between said body and said layer, said layer being grown by molecular beam epitaxy and doped with oxygen so that its resistivity is in excess of approximately 10 8 ohm-cm and any substantial flow of current therethrough is prevented, and a metal electrode formed on said layer.
Claim 10
Dependent Claim
85 words
A seimconductor device comprising a single-crystal body of GaAs, a single-crystal layer of Al x Ga 1-x As, 0.4≲×<1, grown on a major surface of said body so as to form a substantially lattice-matched heterojunction at the interface between said body and said layer, said layer being grown by molecular beam epitaxy and doped with oxygen so that its resistivity is in excess of approximately 10 8 ohm-cm and any substantial flow of current therethrough is prevented, and a metal electrode formed on said layer.
Claim 11
Dependent Claim
24 words
The device of claim 8 further including an amorphous insulative layer disposed between said metal electrode and said Al x Ga 1-x As layer.
References Cited (Backward Citations)
US4062035A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-07-02 | 1983-01-01 | 1983-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-07-02 | 1987-01-01 | 1987-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-07-02 | 1991-01-01 | 1991-07-03 | $7700.00 | Window Closed / Lapsed |