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US4159919A Expired / Lapsed US ⏱️ 0.0 years remaining

Molecular beam epitaxy using premixing

Assignee: AT&T Inc
•
Filing: 1978-01-16
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Granted: 1979-07-03
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Expires: 1998-01-16
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Abstract

Abstract An improved method of forming ternary and quaternary epitaxial films by molecular beam epitaxy involves controlling precisely the ratio of concentrations of two alloying elements in the final compound by heating predetermined independently adjustable quantities of two or more alloying elements in the same oven.

Inventors

  • 👤 James H. McFee
  • 👤 Barry I. Miller

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 13:13
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B23/00; C30B23/002; Y; Y10; Y10S; Y10S148/00; Y10S148/006; Y10S148/169; Y10S438/00; Y10S438/961

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 142 words
A molecular beam epitaxy method of growing an epitaxial film of predetermined chemical composition comprising the steps of: loading a plurality of ovens with predetermined quantities of chemical feedstocks, preparing a substrate on a sample holder, evacuating said apparatus, heating said sample and said plurality of ovens to predetermined temperatures, and directing an atomic beam from each of said ovens at said substrate, whereby an epitaxial film is formed on said substrate from said atomic beams: characterized in that at least one of said plurality of ovens contains a mixture of independently adjustable quantities of two alloying elements in a first predetermined feedstock ratio and in that said first predetermined feedstock ratio is such that said atomic beam from said at least one oven contains said two alloying elements in a first predetermined flux ratio different from said first predetermined feedstock ratio.
Claim 2
Dependent Claim 142 words
A molecular beam epitaxy method of growing an epitaxial film of predetermined chemical composition comprising the steps of: loading a plurality of ovens with predetermined quantities of chemical feedstocks, preparing a substrate on a sample holder, evacuating said apparatus, heating said sample and said plurality of ovens to predetermined temperatures, and directing an atomic beam from each of said ovens at said substrate, whereby an epitaxial film is formed on said substrate from said atomic beams: characterized in that at least one of said plurality of ovens contains a mixture of independently adjustable quantities of two alloying elements in a first predetermined feedstock ratio and in that said first predetermined feedstock ratio is such that said atomic beam from said at least one oven contains said two alloying elements in a first predetermined flux ratio different from said first predetermined feedstock ratio.
Claim 3
Dependent Claim 33 words
A method of growing an epitaxial film according to claim 1, further characterized in that said first predetermined flux ratio is adjusted by varying said predetermined temperature of said at least one oven.
Claim 4
Dependent Claim 23 words
A method according to claim 2, further characterized in that said first predetermined flux ratio is monitored during the growth of said film.
Claim 5
Dependent Claim 31 words
A method of growing an epitaxial film according to claim 3, further characterized in that said two alloying elements are in the same column of the Periodic Table of the elements.
Claim 6
Dependent Claim 54 words
A method according to claim 1, further characterized in that a second one of said plurality of ovens contains a mixture of independently adjustable quantities of two different alloying elements, said ovens producing a first atomic beam having a first predetermined flux ratio and a second atomic beam having a second predetermined flux ratio.
Claim 7
Dependent Claim 42 words
A method according to claim 5, further characterized in that said first and second predetermined flux ratios are independently adjusted by varying said predetermined temperatures of said one of said plurality of ovens and said second one of said plurality of ovens.
Claim 8
Dependent Claim 57 words
A method according to claim 6, further characterized in that said two alloying elements in said one of said ovens are from a first column of the Periodic Table of the elements and that said two alloying elements in said second one of said ovens are from a second column of the Periodic Table of the elements.

References Cited (Backward Citations)

US3672992A Cited
US3716424A Cited
US3793070A Cited
US3915765A Cited
US4069356A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1982-07-02 1983-01-01 1983-07-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1986-07-02 1987-01-01 1987-07-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1990-07-02 1991-01-01 1991-07-03 $7700.00 Window Closed / Lapsed

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